DE3774424D1 - Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor. - Google Patents
Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor.Info
- Publication number
- DE3774424D1 DE3774424D1 DE8787402819T DE3774424T DE3774424D1 DE 3774424 D1 DE3774424 D1 DE 3774424D1 DE 8787402819 T DE8787402819 T DE 8787402819T DE 3774424 T DE3774424 T DE 3774424T DE 3774424 D1 DE3774424 D1 DE 3774424D1
- Authority
- DE
- Germany
- Prior art keywords
- image sensor
- charge transfer
- overflow
- transfer image
- overflow device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8617572A FR2608315B1 (fr) | 1986-12-16 | 1986-12-16 | Dispositif anti-eblouissement pour capteur d'images a transfert de charges et capteur d'images comportant un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3774424D1 true DE3774424D1 (de) | 1991-12-12 |
Family
ID=9341939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787402819T Expired - Lifetime DE3774424D1 (de) | 1986-12-16 | 1987-12-11 | Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4819072A (de) |
EP (1) | EP0276594B1 (de) |
JP (1) | JPS63164770A (de) |
DE (1) | DE3774424D1 (de) |
FR (1) | FR2608315B1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07114276B2 (ja) * | 1988-06-30 | 1995-12-06 | 日本電気株式会社 | 固体撮像装置 |
JPH0748826B2 (ja) * | 1988-12-01 | 1995-05-24 | 三菱電機株式会社 | 固体撮像装置 |
US4975777A (en) * | 1989-06-15 | 1990-12-04 | Eastman Kodak Company | Charge-coupled imager with dual gate anti-blooming structure |
US5043819A (en) * | 1989-12-05 | 1991-08-27 | Samsung Electronics Co., Ltd. | CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements |
FR2657207B1 (fr) * | 1990-01-16 | 1992-04-10 | Thomson Csf | Dispositif a transfert de charges a dynamique elargie. |
JP3086696B2 (ja) * | 1990-08-24 | 2000-09-11 | 株式会社東芝 | 画像信号処理装置 |
FR2676155B1 (fr) * | 1991-05-03 | 1993-07-16 | Thomson Composants Militaires | Dispositif photosensible a registres de lecture juxtaposes. |
JP2809903B2 (ja) * | 1991-09-25 | 1998-10-15 | 富士写真フイルム株式会社 | 固体撮像装置の駆動方法と固体撮像装置 |
GB2262010B (en) * | 1991-11-27 | 1996-01-17 | Eev Ltd | Charge - coupled device |
KR950008698B1 (ko) * | 1992-06-09 | 1995-08-04 | 현대전자산업 주식회사 | 반도체소자의 필드산화막 형성방법 |
JP3899627B2 (ja) * | 1998-01-06 | 2007-03-28 | 富士ゼロックス株式会社 | リニアイメージセンサおよび画像読み取り装置および電荷転送方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2936703A1 (de) * | 1979-09-11 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor |
FR2481553A1 (fr) * | 1980-04-23 | 1981-10-30 | Thomson Csf | Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif |
JPS5721878A (en) * | 1980-07-15 | 1982-02-04 | Nec Corp | Solid state image pickp device and driving method therefor |
JPS5810977A (ja) * | 1981-07-13 | 1983-01-21 | Sony Corp | 固体撮像装置 |
JPS58220573A (ja) * | 1982-06-17 | 1983-12-22 | Olympus Optical Co Ltd | 固体撮像装置 |
EP0115225B1 (de) * | 1982-12-21 | 1987-05-06 | Thomson-Csf | Verfahren zur Abtastung eines nach dem Zwischenspaltenprinzips wirkenden Bildsensors und Anordnung zur Durchführung des Verfahrens |
FR2538650A1 (fr) * | 1982-12-28 | 1984-06-29 | Thomson Csf | Procede d'analyse d'un dispositif photosensible a transfert de ligne |
FR2539937B1 (fr) * | 1983-01-21 | 1986-11-07 | Thomson Csf | Dispositif photosensible a transfert de charge |
FR2564674B1 (fr) * | 1984-05-18 | 1986-09-19 | Thomson Csf | Barrette multilineaire a transfert de charge et procede d'analyse |
JPS6115475A (ja) * | 1984-07-01 | 1986-01-23 | Canon Inc | 撮像素子及び撮像装置 |
FR2571572B1 (fr) * | 1984-10-09 | 1987-01-02 | Thomson Csf | Dispositif photosensible a transfert de ligne muni d'amplificateurs de contre-reaction |
FR2580883B1 (fr) * | 1985-04-19 | 1987-05-22 | Thomson Csf | Dispositif de lecture par transfert de ligne avec contre-reaction |
-
1986
- 1986-12-16 FR FR8617572A patent/FR2608315B1/fr not_active Expired
-
1987
- 1987-12-11 EP EP87402819A patent/EP0276594B1/de not_active Expired - Lifetime
- 1987-12-11 DE DE8787402819T patent/DE3774424D1/de not_active Expired - Lifetime
- 1987-12-14 US US07/132,332 patent/US4819072A/en not_active Expired - Lifetime
- 1987-12-15 JP JP62317281A patent/JPS63164770A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4819072A (en) | 1989-04-04 |
FR2608315B1 (fr) | 1989-02-17 |
JPS63164770A (ja) | 1988-07-08 |
EP0276594A1 (de) | 1988-08-03 |
FR2608315A1 (fr) | 1988-06-17 |
EP0276594B1 (de) | 1991-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: ATMEL GRENOBLE, SAINT EGREVE, FR |
|
8339 | Ceased/non-payment of the annual fee |