DE3774424D1 - Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor. - Google Patents

Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor.

Info

Publication number
DE3774424D1
DE3774424D1 DE8787402819T DE3774424T DE3774424D1 DE 3774424 D1 DE3774424 D1 DE 3774424D1 DE 8787402819 T DE8787402819 T DE 8787402819T DE 3774424 T DE3774424 T DE 3774424T DE 3774424 D1 DE3774424 D1 DE 3774424D1
Authority
DE
Germany
Prior art keywords
image sensor
charge transfer
overflow
transfer image
overflow device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787402819T
Other languages
English (en)
Inventor
Gilles Boucharlat
Jean-Joseph Chabbal
Yvon Cazaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3774424D1 publication Critical patent/DE3774424D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H04N3/1568Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713Transfer or readout registers; Split readout registers or multiple readout registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
DE8787402819T 1986-12-16 1987-12-11 Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor. Expired - Lifetime DE3774424D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8617572A FR2608315B1 (fr) 1986-12-16 1986-12-16 Dispositif anti-eblouissement pour capteur d'images a transfert de charges et capteur d'images comportant un tel dispositif

Publications (1)

Publication Number Publication Date
DE3774424D1 true DE3774424D1 (de) 1991-12-12

Family

ID=9341939

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787402819T Expired - Lifetime DE3774424D1 (de) 1986-12-16 1987-12-11 Ueberlaufvorrichtung fuer einen ladungsuebertragungs-bildsensor und eine solche vorrichtung enthaltender bildsensor.

Country Status (5)

Country Link
US (1) US4819072A (de)
EP (1) EP0276594B1 (de)
JP (1) JPS63164770A (de)
DE (1) DE3774424D1 (de)
FR (1) FR2608315B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114276B2 (ja) * 1988-06-30 1995-12-06 日本電気株式会社 固体撮像装置
JPH0748826B2 (ja) * 1988-12-01 1995-05-24 三菱電機株式会社 固体撮像装置
US4975777A (en) * 1989-06-15 1990-12-04 Eastman Kodak Company Charge-coupled imager with dual gate anti-blooming structure
US5043819A (en) * 1989-12-05 1991-08-27 Samsung Electronics Co., Ltd. CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements
FR2657207B1 (fr) * 1990-01-16 1992-04-10 Thomson Csf Dispositif a transfert de charges a dynamique elargie.
JP3086696B2 (ja) * 1990-08-24 2000-09-11 株式会社東芝 画像信号処理装置
FR2676155B1 (fr) * 1991-05-03 1993-07-16 Thomson Composants Militaires Dispositif photosensible a registres de lecture juxtaposes.
JP2809903B2 (ja) * 1991-09-25 1998-10-15 富士写真フイルム株式会社 固体撮像装置の駆動方法と固体撮像装置
GB2262010B (en) * 1991-11-27 1996-01-17 Eev Ltd Charge - coupled device
KR950008698B1 (ko) * 1992-06-09 1995-08-04 현대전자산업 주식회사 반도체소자의 필드산화막 형성방법
JP3899627B2 (ja) * 1998-01-06 2007-03-28 富士ゼロックス株式会社 リニアイメージセンサおよび画像読み取り装置および電荷転送方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2936703A1 (de) * 1979-09-11 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor
FR2481553A1 (fr) * 1980-04-23 1981-10-30 Thomson Csf Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
JPS5721878A (en) * 1980-07-15 1982-02-04 Nec Corp Solid state image pickp device and driving method therefor
JPS5810977A (ja) * 1981-07-13 1983-01-21 Sony Corp 固体撮像装置
JPS58220573A (ja) * 1982-06-17 1983-12-22 Olympus Optical Co Ltd 固体撮像装置
EP0115225B1 (de) * 1982-12-21 1987-05-06 Thomson-Csf Verfahren zur Abtastung eines nach dem Zwischenspaltenprinzips wirkenden Bildsensors und Anordnung zur Durchführung des Verfahrens
FR2538650A1 (fr) * 1982-12-28 1984-06-29 Thomson Csf Procede d'analyse d'un dispositif photosensible a transfert de ligne
FR2539937B1 (fr) * 1983-01-21 1986-11-07 Thomson Csf Dispositif photosensible a transfert de charge
FR2564674B1 (fr) * 1984-05-18 1986-09-19 Thomson Csf Barrette multilineaire a transfert de charge et procede d'analyse
JPS6115475A (ja) * 1984-07-01 1986-01-23 Canon Inc 撮像素子及び撮像装置
FR2571572B1 (fr) * 1984-10-09 1987-01-02 Thomson Csf Dispositif photosensible a transfert de ligne muni d'amplificateurs de contre-reaction
FR2580883B1 (fr) * 1985-04-19 1987-05-22 Thomson Csf Dispositif de lecture par transfert de ligne avec contre-reaction

Also Published As

Publication number Publication date
US4819072A (en) 1989-04-04
FR2608315B1 (fr) 1989-02-17
JPS63164770A (ja) 1988-07-08
EP0276594A1 (de) 1988-08-03
FR2608315A1 (fr) 1988-06-17
EP0276594B1 (de) 1991-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ATMEL GRENOBLE, SAINT EGREVE, FR

8339 Ceased/non-payment of the annual fee