DE3768672D1 - Verfahren zum herstellen eines kristallinen hg1-xo cdxo te-stab. - Google Patents

Verfahren zum herstellen eines kristallinen hg1-xo cdxo te-stab.

Info

Publication number
DE3768672D1
DE3768672D1 DE8787400125T DE3768672T DE3768672D1 DE 3768672 D1 DE3768672 D1 DE 3768672D1 DE 8787400125 T DE8787400125 T DE 8787400125T DE 3768672 T DE3768672 T DE 3768672T DE 3768672 D1 DE3768672 D1 DE 3768672D1
Authority
DE
Germany
Prior art keywords
cdxo
stick
crystalline
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787400125T
Other languages
English (en)
Inventor
Alain Rene Lucien Durand
Jean-Luc Dessus
Michel Royer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of DE3768672D1 publication Critical patent/DE3768672D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8787400125T 1986-01-21 1987-01-20 Verfahren zum herstellen eines kristallinen hg1-xo cdxo te-stab. Expired - Fee Related DE3768672D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8600769A FR2593196B1 (fr) 1986-01-21 1986-01-21 Procede de preparation d'un lingot cristallin de hg1-xo cdxo te

Publications (1)

Publication Number Publication Date
DE3768672D1 true DE3768672D1 (de) 1991-04-25

Family

ID=9331307

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400125T Expired - Fee Related DE3768672D1 (de) 1986-01-21 1987-01-20 Verfahren zum herstellen eines kristallinen hg1-xo cdxo te-stab.

Country Status (7)

Country Link
US (1) US4765863A (de)
EP (1) EP0234984B1 (de)
JP (1) JPH085760B2 (de)
CA (1) CA1297763C (de)
DE (1) DE3768672D1 (de)
ES (1) ES2022382B3 (de)
FR (1) FR2593196B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2629476B1 (fr) * 1988-04-01 1990-11-30 Telecommunications Sa Procede de preparation d'un lingot cristallin de hgcdte
ES2066726A1 (es) * 1993-06-03 1995-03-01 Univ Madrid Procedimiento y dispositivo para la preparacion de monocristales semiconductores en volumen y su aplicacion al crecimiento del monocristalesde hg1-xcdxte.
FR2828214B1 (fr) * 2001-08-06 2003-12-12 Centre Nat Rech Scient PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE
FR3043698B1 (fr) * 2015-11-13 2019-11-22 Nimesis Technology Procede d'elaboration d'alliages monocristallins a base de cuivre

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2228540B1 (de) * 1973-05-11 1978-02-10 Commissariat Energie Atomique
US3849205A (en) * 1973-08-27 1974-11-19 Texas Instruments Inc Enhancement of solid state recrystallization by induced nucleation
FR2484469A1 (fr) * 1980-02-22 1981-12-18 Telecommunications Sa Procede de preparation de couches homogenes de hg1-xcdxte
FR2502190A1 (fr) * 1981-03-18 1982-09-24 Telecommunications Sa Procede de preparation de cristaux de hg1-x cdx te
JPS58500757A (ja) * 1981-05-15 1983-05-12 フイリツプス　エレクトロニツク　アンド　アソシエ−テツド　インダストリ−ズ　リミテツド テルル化水銀カドミウム結晶の成長方法
US4474640A (en) * 1981-12-01 1984-10-02 Texas Instruments Incorporated In situ differential thermal analysis for HgCdTe LPE
JPS5938190A (ja) * 1982-08-26 1984-03-01 Mitsubishi Heavy Ind Ltd 舷梯装置
FR2536767A1 (fr) * 1982-11-30 1984-06-01 Commissariat Energie Atomique Procede d'elaboration de composes semi-conducteurs ternaires ou quaternaires
JPS59169995A (ja) * 1983-03-15 1984-09-26 Nec Corp ＨｇＣｄＴｅ単結晶の製造方法
DE3322789C2 (de) * 1983-06-24 1985-12-05 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen von einkristallinem Hg↓1↓↓-↓↓x↓Cd↓x↓Te

Also Published As

Publication number Publication date
JPH085760B2 (ja) 1996-01-24
FR2593196A1 (fr) 1987-07-24
EP0234984A1 (de) 1987-09-02
EP0234984B1 (de) 1991-03-20
JPS62176999A (ja) 1987-08-03
ES2022382B3 (es) 1991-12-01
US4765863A (en) 1988-08-23
CA1297763C (fr) 1992-03-24
FR2593196B1 (fr) 1988-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee