DE3751781D1 - Festkörper-Elektronenstrahlerzeuger - Google Patents

Festkörper-Elektronenstrahlerzeuger

Info

Publication number
DE3751781D1
DE3751781D1 DE3751781T DE3751781T DE3751781D1 DE 3751781 D1 DE3751781 D1 DE 3751781D1 DE 3751781 T DE3751781 T DE 3751781T DE 3751781 T DE3751781 T DE 3751781T DE 3751781 D1 DE3751781 D1 DE 3751781D1
Authority
DE
Germany
Prior art keywords
solid state
electron gun
state electron
gun
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3751781T
Other languages
English (en)
Other versions
DE3751781T2 (de
Inventor
Mamoru Miyawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18939686A external-priority patent/JPH07111864B2/ja
Priority claimed from JP18939786A external-priority patent/JPH07111865B2/ja
Priority claimed from JP18939986A external-priority patent/JPH07111867B2/ja
Priority claimed from JP18939386A external-priority patent/JPH0821312B2/ja
Priority claimed from JP18939586A external-priority patent/JPH0821313B2/ja
Priority claimed from JP18939886A external-priority patent/JPH07111866B2/ja
Priority claimed from JP18939286A external-priority patent/JPH07111862B2/ja
Priority claimed from JP18939486A external-priority patent/JPH07111863B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3751781D1 publication Critical patent/DE3751781D1/de
Publication of DE3751781T2 publication Critical patent/DE3751781T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
DE3751781T 1986-08-12 1987-08-12 Festkörper-Elektronenstrahlerzeuger Expired - Fee Related DE3751781T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP18939586A JPH0821313B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939886A JPH07111866B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939786A JPH07111865B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939486A JPH07111863B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939386A JPH0821312B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939686A JPH07111864B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939286A JPH07111862B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置
JP18939986A JPH07111867B2 (ja) 1986-08-12 1986-08-12 固体電子ビ−ム発生装置

Publications (2)

Publication Number Publication Date
DE3751781D1 true DE3751781D1 (de) 1996-05-30
DE3751781T2 DE3751781T2 (de) 1996-10-17

Family

ID=27573384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751781T Expired - Fee Related DE3751781T2 (de) 1986-08-12 1987-08-12 Festkörper-Elektronenstrahlerzeuger

Country Status (3)

Country Link
US (1) US5031015A (de)
EP (1) EP0257460B1 (de)
DE (1) DE3751781T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2634060B1 (fr) * 1988-07-05 1996-02-09 Thomson Csf Structure de source d'electrons et application aux tubes d'emission d'ondes electromagnetiques
NL8901590A (nl) * 1989-06-23 1991-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
EP0416558B1 (de) * 1989-09-04 1996-07-31 Canon Kabushiki Kaisha Elektronen emittierendes Element und Verfahren zur Herstellung desselben
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
US5723871A (en) * 1991-05-02 1998-03-03 Daido Tokushuko Kabushiki Kaisha Process of emitting highly spin-polarized electron beam and semiconductor device therefor
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6577058B2 (en) * 2001-10-12 2003-06-10 Hewlett-Packard Development Company, L.P. Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4040080A (en) * 1976-03-22 1977-08-02 Hamamatsu Terebi Kabushiki Kaisha Semiconductor cold electron emission device
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
DE3380047D1 (en) * 1982-09-17 1989-07-13 France Etat Ballistic heterojunction bipolar transistor
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
JPS60253283A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体発光素子
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPH0763065B2 (ja) * 1984-12-25 1995-07-05 日本電気株式会社 低閾値電圧のバイポーラトランジスタ

Also Published As

Publication number Publication date
EP0257460A3 (en) 1989-12-06
DE3751781T2 (de) 1996-10-17
EP0257460A2 (de) 1988-03-02
EP0257460B1 (de) 1996-04-24
US5031015A (en) 1991-07-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee