DE3684504D1 - Photoschutzlackzusammensetzungen auf basis von vernetzten polyalkenylphenolen. - Google Patents

Photoschutzlackzusammensetzungen auf basis von vernetzten polyalkenylphenolen.

Info

Publication number
DE3684504D1
DE3684504D1 DE8686105007T DE3684504T DE3684504D1 DE 3684504 D1 DE3684504 D1 DE 3684504D1 DE 8686105007 T DE8686105007 T DE 8686105007T DE 3684504 T DE3684504 T DE 3684504T DE 3684504 D1 DE3684504 D1 DE 3684504D1
Authority
DE
Germany
Prior art keywords
polyalkenylphenols
linked
cross
compositions based
protective lacquer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686105007T
Other languages
German (de)
English (en)
Inventor
Stephen Edward Greco
Dennis Clinton Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3684504D1 publication Critical patent/DE3684504D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
DE8686105007T 1985-04-22 1986-04-11 Photoschutzlackzusammensetzungen auf basis von vernetzten polyalkenylphenolen. Expired - Lifetime DE3684504D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/725,587 US4600683A (en) 1985-04-22 1985-04-22 Cross-linked polyalkenyl phenol based photoresist compositions

Publications (1)

Publication Number Publication Date
DE3684504D1 true DE3684504D1 (de) 1992-04-30

Family

ID=24915162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686105007T Expired - Lifetime DE3684504D1 (de) 1985-04-22 1986-04-11 Photoschutzlackzusammensetzungen auf basis von vernetzten polyalkenylphenolen.

Country Status (5)

Country Link
US (1) US4600683A (en, 2012)
EP (1) EP0202458B1 (en, 2012)
JP (1) JPS61250637A (en, 2012)
CA (1) CA1218553A (en, 2012)
DE (1) DE3684504D1 (en, 2012)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164083B1 (de) * 1984-06-07 1991-05-02 Hoechst Aktiengesellschaft Positiv arbeitende strahlungsempfindliche Beschichtungslösung
ATE42419T1 (de) * 1985-08-12 1989-05-15 Hoechst Celanese Corp Verfahren zur herstellung negativer bilder aus einem positiv arbeitenden photoresist.
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US4863819A (en) * 1986-09-11 1989-09-05 Drexler Technology Corporation Read-only optical data card
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
EP0293704A3 (de) * 1987-06-01 1989-02-15 Hoechst Celanese Corporation Aufzeichnungsmaterial mit einer wasserlöslichen Kontrastverstärkungsschicht
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
US5462840A (en) * 1987-09-16 1995-10-31 Hoechst Celanese Corporation Use of poly(35-disubstituted 4-hydroxystyrene/N-substituted maleimide for forming a negative image
EP0307752B1 (en) * 1987-09-16 1995-02-22 Hoechst Aktiengesellschaft Poly(3-mono- and 3,5-disubstituted-4-acetoxystyrenes and 4-hydroxy-styrenes)and their use
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
JPH02502312A (ja) * 1987-12-10 1990-07-26 マクダーミツド　インコーポレーテツド 像反転性乾燥フィルムホトレジスト
US5807947A (en) * 1988-10-21 1998-09-15 Clariant Finance (Bvi) Limited Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
US5145763A (en) * 1990-06-29 1992-09-08 Ocg Microelectronic Materials, Inc. Positive photoresist composition
DE59206289D1 (de) * 1991-09-27 1996-06-20 Siemens Ag Verfahren zur Erzeugung eines Bottom-Resists
US5260172A (en) * 1991-12-17 1993-11-09 International Business Machines Corporation Multilayer photoresist comprising poly-(vinylbenzoic acid) as a planarizing layer
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
WO1995010073A1 (en) * 1993-10-04 1995-04-13 Hoechst Celanese Corporation Novolak/polyhydroxystyrene copolymer and photoresist compositions
US5547812A (en) * 1995-06-05 1996-08-20 International Business Machines Corporation Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer
US5609989A (en) * 1995-06-06 1997-03-11 International Business Machines, Corporation Acid scavengers for use in chemically amplified photoresists
JP3695024B2 (ja) * 1996-11-14 2005-09-14 Ｊｓｒ株式会社 半導体デバイス製造用感放射線性樹脂組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (en, 2012) * 1972-05-05 1974-11-27
US4061799A (en) * 1973-11-05 1977-12-06 Texas Instruments Incorporated Method of patterning styrene diene block copolymer electron beam resists
US4087439A (en) * 1974-04-29 1978-05-02 The Goodyear Tire & Rubber Company New high melting N,N'-terephthaloyl bis-phthalimide and its use as an ester interlinking agent for polyesters
FR2290458A1 (fr) * 1974-11-08 1976-06-04 Thomson Csf Resine sensible aux electrons et son application a la realisation de masques de haute resolution pour la fabrication de composants electroniques
DE2529054C2 (de) * 1975-06-30 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
US4247616A (en) * 1979-07-27 1981-01-27 Minnesota Mining And Manufacturing Company Positive-acting photoresist composition
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
GB2101114B (en) * 1981-07-10 1985-05-22 Farmos Group Ltd Substituted imidazole derivatives and their preparation and use
DE3134123A1 (de) * 1981-08-28 1983-03-17 Hoechst Ag, 6000 Frankfurt Durch strahlung polymerisierbares gemisch und daraushergestelltes photopolymerisierbares kopiermaterial
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol

Also Published As

Publication number Publication date
CA1218553A (en) 1987-03-03
JPH054662B2 (en, 2012) 1993-01-20
EP0202458A2 (en) 1986-11-26
EP0202458A3 (en) 1988-01-07
JPS61250637A (ja) 1986-11-07
EP0202458B1 (en) 1992-03-25
US4600683A (en) 1986-07-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee