DE3673459D1 - Verfahren zur herstellung eines halbleiterlasers mit streifengeometrie und ein nach diesem verfahren hergestellter laser. - Google Patents

Verfahren zur herstellung eines halbleiterlasers mit streifengeometrie und ein nach diesem verfahren hergestellter laser.

Info

Publication number
DE3673459D1
DE3673459D1 DE8686401035T DE3673459T DE3673459D1 DE 3673459 D1 DE3673459 D1 DE 3673459D1 DE 8686401035 T DE8686401035 T DE 8686401035T DE 3673459 T DE3673459 T DE 3673459T DE 3673459 D1 DE3673459 D1 DE 3673459D1
Authority
DE
Germany
Prior art keywords
laser
producing
semiconductor laser
strip geometry
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686401035T
Other languages
English (en)
Inventor
Louis Menigaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3673459D1 publication Critical patent/DE3673459D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
DE8686401035T 1985-05-21 1986-05-14 Verfahren zur herstellung eines halbleiterlasers mit streifengeometrie und ein nach diesem verfahren hergestellter laser. Expired - Lifetime DE3673459D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8507619A FR2582455B1 (fr) 1985-05-21 1985-05-21 Procede de fabrication d'un laser a semiconducteur a geometrie a ruban et laser obtenu par ce procede

Publications (1)

Publication Number Publication Date
DE3673459D1 true DE3673459D1 (de) 1990-09-20

Family

ID=9319434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686401035T Expired - Lifetime DE3673459D1 (de) 1985-05-21 1986-05-14 Verfahren zur herstellung eines halbleiterlasers mit streifengeometrie und ein nach diesem verfahren hergestellter laser.

Country Status (5)

Country Link
US (1) US4742013A (de)
EP (1) EP0203848B1 (de)
JP (1) JPS61267390A (de)
DE (1) DE3673459D1 (de)
FR (1) FR2582455B1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948960A (en) * 1988-09-20 1990-08-14 The University Of Delaware Dual mode light emitting diode/detector diode for optical fiber transmission lines
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
GB2030766A (en) * 1978-09-02 1980-04-10 Plessey Co Ltd Laser treatment of semiconductor material
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
US4340967A (en) * 1980-06-02 1982-07-20 Bell Telephone Laboratories, Incorporated Semiconductor lasers with stable higher-order modes parallel to the junction plane
US4536940A (en) * 1981-06-12 1985-08-27 At&T Bell Laboratories Method of making a loss stabilized buried heterostructure laser
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4535220A (en) * 1981-11-10 1985-08-13 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Integrated circuits
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4564403A (en) * 1984-01-27 1986-01-14 Sony Corporation Research Center Single-crystal semiconductor devices and method for making them
JPS6115319A (ja) * 1984-07-02 1986-01-23 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2582455B1 (fr) 1987-08-14
FR2582455A1 (fr) 1986-11-28
EP0203848B1 (de) 1990-08-16
EP0203848A1 (de) 1986-12-03
JPS61267390A (ja) 1986-11-26
US4742013A (en) 1988-05-03

Similar Documents

Publication Publication Date Title
DE3675687D1 (de) Verfahren zur herstellung von 2,2,6,6,-tetraalkyl-4-piperidylamine.
DE3676358D1 (de) Verfahren zur herstellung von zahnraedern.
DE3669310D1 (de) Verfahren zur herstellung von cycloolefinen.
DE3684541D1 (de) Verfahren zur herstellung von polyarylensulfiden.
DE3683067D1 (de) Verfahren zur herstellung eines laminats.
DE3677272D1 (de) Verfahren zur herstellung von 2,2,6,6-tetraalkyl-4-piperidylaminen.
DE3667167D1 (de) Verfahren zur herstellung von 1,5-diazido-3-nitrazapentan.
DE3686444D1 (de) N-fluorpyridiniumsalz und verfahren zur herstellung.
DE3676215D1 (de) Verfahren zur herstellung von 2,3,4,5-tetrafluorbenzoesaeure.
DE3684569D1 (de) Verfahren zur herstellung von polyarylensulfid.
DE3674055D1 (de) Verfahren zur herstellung von 1,3,5-triazintrionen.
DE3668316D1 (de) Verfahren zur herstellung von cycloolefinen.
DE3577778D1 (de) Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte anordnung.
DE3675853D1 (de) Verfahren zur herstellung von polyarylensulfiden.
DE3678779D1 (de) Verfahren zur herstellung eines lichtleiters und nach diesem verfahren hergestellter hohlmetallichtleiter.
DE3673049D1 (de) Verfahren zur herstellung von 1,3-dialkyl-2-imidazolidinon.
DE68906500D1 (de) Verfahren zur herstellung von 2,6-dimethylnaphthalin.
DE58903458D1 (de) Verfahren zur herstellung von 1,5-dihydroxy- und 1,5 diaminonaphthalin.
DE3886936D1 (de) 2,5,6,7-TETRANOR-4,8-INTER-m-PHENYLEN 2-PGI-DERIVATE, VERFAHREN ZUR HERSTELLUNG UND DEREN VERWENDUNG.
DE3669148D1 (de) Verfahren zur herstellung von 4,4&#39;-dinitrodibenzylen.
DE3670075D1 (de) Verfahren zur herstellung von bis-hydroxyphenyl-n-alkanen.
DE3673459D1 (de) Verfahren zur herstellung eines halbleiterlasers mit streifengeometrie und ein nach diesem verfahren hergestellter laser.
DE68907180D1 (de) Verfahren zur herstellung von 2,3,5-trimethylbenzochinon.
DE3671436D1 (de) Verfahren zur herstellung von 2,2,-dibrom-3-oxonitrilen.
DE3676415D1 (de) Verfahren zur herstellung eines halbleiterlasers mit vergrabener streifenstruktur mit oder ohne beugungsgitter und nach diesem verfahren hergestellter laser.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee