DE3664343D1 - Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults - Google Patents

Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults

Info

Publication number
DE3664343D1
DE3664343D1 DE8686400800T DE3664343T DE3664343D1 DE 3664343 D1 DE3664343 D1 DE 3664343D1 DE 8686400800 T DE8686400800 T DE 8686400800T DE 3664343 T DE3664343 T DE 3664343T DE 3664343 D1 DE3664343 D1 DE 3664343D1
Authority
DE
Germany
Prior art keywords
producing
crystal film
silicon crystal
insulator substrate
single silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686400800T
Other languages
English (en)
Inventor
Michel Haond
Daniel Bensahel
Didier Dutartre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ministere des PTT
Etat Francais
Original Assignee
Ministere des PTT
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ministere des PTT, Etat Francais filed Critical Ministere des PTT
Application granted granted Critical
Publication of DE3664343D1 publication Critical patent/DE3664343D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
DE8686400800T 1985-04-19 1986-04-15 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults Expired DE3664343D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8506000A FR2580672B1 (fr) 1985-04-19 1985-04-19 Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises

Publications (1)

Publication Number Publication Date
DE3664343D1 true DE3664343D1 (en) 1989-08-17

Family

ID=9318452

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400800T Expired DE3664343D1 (en) 1985-04-19 1986-04-15 Process for producing on an insulator substrate an oriented single silicon crystal film with localized faults

Country Status (5)

Country Link
US (1) US4678538A (de)
EP (1) EP0202977B1 (de)
JP (1) JPS621220A (de)
DE (1) DE3664343D1 (de)
FR (1) FR2580672B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2580673B1 (fr) * 1985-04-19 1987-09-25 Haond Michel Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises
JPS6265317A (ja) * 1985-09-17 1987-03-24 Mitsubishi Electric Corp 半導体単結晶膜形成のためのウエハ構造
EP0227076B1 (de) * 1985-12-20 1992-06-17 Agency Of Industrial Science And Technology Verfahren zur Herstellung einer monokristallinen dünnen Schicht
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
US4888302A (en) * 1987-11-25 1989-12-19 North American Philips Corporation Method of reduced stress recrystallization
FR2628444A1 (fr) * 1988-03-11 1989-09-15 Dutartre Didier Procede de fabrication d'une couche de silicium sur isolant
JP3470623B2 (ja) * 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4350561A (en) * 1980-05-16 1982-09-21 Spire Corporation Single crystal processes and products
US4536251A (en) * 1984-06-04 1985-08-20 Xerox Corporation Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas

Also Published As

Publication number Publication date
JPS621220A (ja) 1987-01-07
FR2580672A1 (fr) 1986-10-24
EP0202977A1 (de) 1986-11-26
EP0202977B1 (de) 1989-07-12
FR2580672B1 (fr) 1987-05-15
US4678538A (en) 1987-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee