DE3662629D1 - High frequency pin-type diode with abrupt junctions - Google Patents

High frequency pin-type diode with abrupt junctions

Info

Publication number
DE3662629D1
DE3662629D1 DE8686400379T DE3662629T DE3662629D1 DE 3662629 D1 DE3662629 D1 DE 3662629D1 DE 8686400379 T DE8686400379 T DE 8686400379T DE 3662629 T DE3662629 T DE 3662629T DE 3662629 D1 DE3662629 D1 DE 3662629D1
Authority
DE
Germany
Prior art keywords
high frequency
type diode
frequency pin
abrupt junctions
abrupt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686400379T
Other languages
English (en)
Inventor
Raymond Henry
Didier Berger
Christian Straehli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3662629D1 publication Critical patent/DE3662629D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8686400379T 1985-02-26 1986-02-21 High frequency pin-type diode with abrupt junctions Expired DE3662629D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8502766A FR2578101B1 (fr) 1985-02-26 1985-02-26 Diode hyperfrequence de type pin a transitions abruptes

Publications (1)

Publication Number Publication Date
DE3662629D1 true DE3662629D1 (en) 1989-05-03

Family

ID=9316635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686400379T Expired DE3662629D1 (en) 1985-02-26 1986-02-21 High frequency pin-type diode with abrupt junctions

Country Status (3)

Country Link
EP (1) EP0193462B1 (de)
DE (1) DE3662629D1 (de)
FR (1) FR2578101B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0277336A1 (de) * 1987-01-13 1988-08-10 BBC Brown Boveri AG Verfahren zur Herstellung eines schnellen Halbleiterbauelements
USRE38582E1 (en) 1995-10-05 2004-09-14 Qinetiq Limited Semiconductor diode with suppression of auger generation processes
GB9520324D0 (en) * 1995-10-05 1995-12-06 Secr Defence Improved auger suppressed device
DE10031461B4 (de) 2000-06-28 2006-06-29 Infineon Technologies Ag Hochvolt-Diode
EP2996152B1 (de) * 2014-09-15 2017-03-15 ABB Schweiz AG Hochfrequenzdiode und Verfahren zu deren Herstellung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645081A (en) * 1979-09-19 1981-04-24 Toshiba Corp Low-loss diode
JPS5860577A (ja) * 1981-10-07 1983-04-11 Hitachi Ltd 半導体装置
DE3328521C2 (de) * 1983-08-06 1985-11-14 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gleichrichterdiode für hohe Sperrspannung

Also Published As

Publication number Publication date
EP0193462B1 (de) 1989-03-29
FR2578101B1 (fr) 1987-10-09
FR2578101A1 (fr) 1986-08-29
EP0193462A1 (de) 1986-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee