DE3633926A1 - Earth contact for a p-i-n diode - Google Patents

Earth contact for a p-i-n diode

Info

Publication number
DE3633926A1
DE3633926A1 DE19863633926 DE3633926A DE3633926A1 DE 3633926 A1 DE3633926 A1 DE 3633926A1 DE 19863633926 DE19863633926 DE 19863633926 DE 3633926 A DE3633926 A DE 3633926A DE 3633926 A1 DE3633926 A1 DE 3633926A1
Authority
DE
Germany
Prior art keywords
substrate
pin diode
line
diode
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863633926
Other languages
German (de)
Other versions
DE3633926C2 (en
Inventor
Chavi Dipl Ing Dehdarian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Priority to DE19863633926 priority Critical patent/DE3633926A1/en
Publication of DE3633926A1 publication Critical patent/DE3633926A1/en
Application granted granted Critical
Publication of DE3633926C2 publication Critical patent/DE3633926C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Attenuators (AREA)

Abstract

In an earth contact for a p-i-n diode (5) which is designed as a planar conductor (2) situated on a substrate, contact is made to the p-i-n diode (5) by its earth connection on a conductor track (6) which extends through a break (4) accommodating the p-i-n diode (5) in the signal conductor (2) and has a through contact (7, 8) to the earth conductor on the substrate (1) at each of its ends. <IMAGE>

Description

Die vorliegende Erfindung betrifft eine Massekontaktierung für eine PIN-Diode, die als veränderbarer Widerstand in ei­ nem Signalweg eingesetzt ist, der als eine auf einem Sub­ strat angeordnete planare Leitung ausgeführt ist, wobei die Signalleitung mit der darin in einer Unterbrechung eingefüg­ ten PIN-Diode auf einer Seite des Substrats und eine Masse­ leitung auf der gegenüberliegenden Substratseite aufgebracht ist.The present invention relates to ground contact for a PIN diode that acts as a variable resistor in egg nem signal path is used, which as one on a sub strat arranged planar line is executed, the Signal line with the inserted in one break th PIN diode on one side of the substrate and a ground line applied on the opposite side of the substrate is.

PIN-Dioden können wegen ihrer kleinen Kapazität und ihrer kurzen Erholungszeit als sehr schnelle Schalter oder Dämp­ fungsglieder für Mikrowellensignale verwendet werden.PIN diodes can because of their small capacity and their short recovery time as a very fast switch or damper be used for microwave signals.

Der Erfindung liegt die Aufgabe zugrunde, eine Massekontak­ tierung für eine in einer planaren Leitung eingefügte PIN- Diode anzugeben, welche eine möglichst breitbandige und stö­ rungsfreie Ankopplung eines auf der Leitung geführten Hoch­ frequenzsignals an die PIN-Diode gewährleistet.The invention has for its object a ground contact for a PIN inserted in a planar line Specify diode, which has a broadband and interference smooth coupling of a high on the line frequency signal to the PIN diode guaranteed.

Erfindungsgemäß wird diese Aufgabe durch die Merkmale des Patentanspruchs 1 gelöst.According to the invention, this object is achieved through the features of Claim 1 solved.

Eine zweckmäßige Ausführungsform der Erfindung geht aus dem Un­ teranspruch hervor.
An expedient embodiment of the invention can be seen from the subclaim.

An Hand eines in der Zeichnung dargestellten Ausführungsbei­ spiels wird nachfolgend die Erfindung erläutert. In der Zeichnung ist inOn the basis of an embodiment shown in the drawing The invention is explained below. In the Drawing is in

Fig. 1 eine Draufsicht auf ein Substrat mit einer in einer planaren Leitung eingefügten PIN-Diode, und in Fig. 1 is a plan view of a substrate with a PIN diode inserted in a planar line, and in

Fig. 2 ein Querschnitt A-A durch diese An­ ordnung dargestellt. Fig. 2 shows a cross section AA through this order.

Die Fig. 1 zeigt ein Substrat 1, auf deren Oberseite eine planare, ein Hochfrequenzsignal führende Leitung 2 aufge­ bracht ist. Eine zugehörige Masseleitung 3 ist auf der Sub­ stratunterseite, welche in der Querschnittsansicht in Fig. 2 zu sehen ist, angeordnet. Die planare Leitung 2 weist an einer Stelle eine Unterbrechung 4 auf, in die eine PIN-Diode 5 eingesetzt ist. Diese PIN-Diode 5 soll beispielsweise als Dämpfungsglied auf das über die Leitung 2 laufende Hochfre­ quenzsignal wirken. Um einen möglichst breitbandigen Wir­ kungsbereich der PIN-Diode zu erreichen, ist die hochfre­ quenzmäßige Kontaktierung des PIN-Dioden Masseanschlusses mit der Masseleitung 3 von besonderer Bedeutung. Fig. 1 shows a substrate 1 , on the top of which a planar, a high-frequency signal line 2 is brought up. An associated ground line 3 is arranged on the underside of the substrate, which can be seen in the cross-sectional view in FIG. 2. The planar line 2 has an interruption 4 at one point, into which a PIN diode 5 is inserted. This PIN diode 5 should act, for example, as an attenuator on the Hochfre frequency signal running on line 2 . In order to achieve the widest possible range of action for the PIN diode, the high-frequency contacting of the PIN diode ground connection with the ground line 3 is of particular importance.

Diese Massekontaktierung erfolgt mit Hilfe einer durch die Unterbrechung 4 der Leitung 2 verlaufenden Leiterbahn 6, auf der die PIN-Diode 5 mit ihrem als Masseanschluß dienenden Gehäuse durch Löten oder Kleben elektrisch leitend fixiert ist. An beiden Enden der quer zur Leitung 2 verlaufenden Leiterbahn 6 ist je eine Durchkontaktierung 7, 8 zur Masse­ fläche 3 auf der Substratunterseite vorhanden. Die Durchkon­ taktierungen 7 und 8 sind an den Innenwänden metallisierte Löcher, die selbst in ein hartes Keramiksubstrat problemlos, ohne Rißbildungen befürchten zu müssen, eingebohrt werden können. This ground contact is made with the aid of a conductor 6 running through the interruption 4 of the line 2 , on which the PIN diode 5, with its housing serving as the ground connection, is fixed in an electrically conductive manner by soldering or gluing. At both ends of the conductor 6 extending transversely to the line 2 , a via 7, 8 to the ground surface 3 is provided on the underside of the substrate. The through contacts 7 and 8 are metallized holes on the inner walls, which can be easily drilled into a hard ceramic substrate without fear of cracks.

Die Masseverbindung der PIN-Diode 5 über zwei neben ihr an­ geordnete Durchkontaktierungen 7 und 8 stellt für das Hoch­ frequenzsignal einen sehr geringen Blindwiderstand dar, wes­ halb die Ankopplung des Hochfrequenzsignals an die PIN-Diode sehr breitbandig ist. Dies ist darauf zurückzuführen, daß die Leiterbahn 6 mit den zwei Durchkontaktierungen 7 und 8 wie die Parallelschaltung zweier Induktivitäten wirkt, wo­ durch sich die Gesamtinduktivität der Massekontaktierung verringert. Es ist auch möglich, mehr als nur zwei Durchkon­ taktierungen vorzusehen.The ground connection of the PIN diode 5 over two next to it to ordered vias 7 and 8 represents a very low reactance for the high frequency signal, which is why the coupling of the high frequency signal to the PIN diode is very broadband. This is due to the fact that the conductor track 6 with the two plated-through holes 7 and 8 acts like the parallel connection of two inductors, which reduces the overall inductance of the ground contact. It is also possible to provide more than just two through contacts.

Claims (2)

1. Massekontaktierung für eine PIN-Diode, die als veränder­ barer Widerstand einen Signalweg eingesetzt ist, der als eine auf einem Substrat angeordnete planare Leitung ausgeführt ist, wobei die Signalleitung mit der darin in einer Unterbrechung eingefügten PIN-Diode auf einer Sei­ te des Substrats und eine Masseleitung auf der gegenüber­ liegenden Substratseite aufgebracht ist, dadurch gekenn­ zeichnet, daß die PIN-Diode (5) mit ihrem Masseanschluß auf einer Leiterbahn (6) kontaktiert ist, die durch die Unterbrechung (4) in der Signalleitung (2) verläuft und an jedem ihrer Enden mindestens eine Durchkontaktierung (7, 8) zur Masseleitung (3) des Substrats (1) aufweist.1. Ground contact for a PIN diode, which is used as a changeable resistor, a signal path which is designed as a planar line arranged on a substrate, the signal line with the PIN diode inserted therein in an interruption on one side of the substrate and a ground line is applied to the opposite side of the substrate, characterized in that the PIN diode ( 5 ) is contacted with its ground connection on a conductor track ( 6 ) which runs through the interruption ( 4 ) in the signal line ( 2 ) and has at least one through-contact ( 7, 8 ) at each of its ends to the ground line ( 3 ) of the substrate ( 1 ). 2. Massekontaktierung nach Anspruch 1, dadurch gekenn­ zeichnet, daß die PIN-Diode (5) mit ihrem als Masseanschluß dienenden Gehäuse auf der Leiterbahn (6) elektrisch lei­ tend fixiert ist.2. Ground contact according to claim 1, characterized in that the PIN diode ( 5 ) with its housing serving as ground connection on the conductor track ( 6 ) is fixed electrically conductive.
DE19863633926 1986-10-04 1986-10-04 Earth contact for a p-i-n diode Granted DE3633926A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19863633926 DE3633926A1 (en) 1986-10-04 1986-10-04 Earth contact for a p-i-n diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863633926 DE3633926A1 (en) 1986-10-04 1986-10-04 Earth contact for a p-i-n diode

Publications (2)

Publication Number Publication Date
DE3633926A1 true DE3633926A1 (en) 1988-04-14
DE3633926C2 DE3633926C2 (en) 1991-03-14

Family

ID=6311115

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863633926 Granted DE3633926A1 (en) 1986-10-04 1986-10-04 Earth contact for a p-i-n diode

Country Status (1)

Country Link
DE (1) DE3633926A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10023220A1 (en) * 2000-05-08 2001-11-29 Infineon Technologies Ag Connection arrangement e.g. for electronic component on PCB, has bearer with recess is at least partly formed near electrical connection contact and at least partly filled with electrically conductive adhesive

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642274A1 (en) * 1975-10-19 1977-04-21 Aei Semiconductors Ltd MICROWAVE CIRCUIT ON A DIELECTRIC SUBSTRATE
DE2929612B1 (en) * 1979-07-21 1981-01-29 Rohde & Schwarz Circuit arrangement in microstrip construction for circuits of high frequency technology equipped with power transistors
DE3207818A1 (en) * 1981-03-05 1982-09-23 ITALTEL Società Italiana Telecomunicazioni S.p.A., 20149 Milano SWITCHING WITH A MICROSTRIP

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642274A1 (en) * 1975-10-19 1977-04-21 Aei Semiconductors Ltd MICROWAVE CIRCUIT ON A DIELECTRIC SUBSTRATE
DE2929612B1 (en) * 1979-07-21 1981-01-29 Rohde & Schwarz Circuit arrangement in microstrip construction for circuits of high frequency technology equipped with power transistors
DE3207818A1 (en) * 1981-03-05 1982-09-23 ITALTEL Società Italiana Telecomunicazioni S.p.A., 20149 Milano SWITCHING WITH A MICROSTRIP

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10023220A1 (en) * 2000-05-08 2001-11-29 Infineon Technologies Ag Connection arrangement e.g. for electronic component on PCB, has bearer with recess is at least partly formed near electrical connection contact and at least partly filled with electrically conductive adhesive
DE10023220C2 (en) * 2000-05-08 2002-06-13 Infineon Technologies Ag joint assembly

Also Published As

Publication number Publication date
DE3633926C2 (en) 1991-03-14

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8120 Willingness to grant licenses paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ROBERT BOSCH GMBH, 70469 STUTTGART, DE

8339 Ceased/non-payment of the annual fee