DE3586535D1 - Gegen durchbruch geschuetzte transistoranordnung. - Google Patents

Gegen durchbruch geschuetzte transistoranordnung.

Info

Publication number
DE3586535D1
DE3586535D1 DE8585309507T DE3586535T DE3586535D1 DE 3586535 D1 DE3586535 D1 DE 3586535D1 DE 8585309507 T DE8585309507 T DE 8585309507T DE 3586535 T DE3586535 T DE 3586535T DE 3586535 D1 DE3586535 D1 DE 3586535D1
Authority
DE
Germany
Prior art keywords
breakthrough
transistor arrangement
arrangement protected
protected
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585309507T
Other languages
English (en)
Other versions
DE3586535T2 (de
Inventor
Kaoru Imamura
Kenichi Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3586535D1 publication Critical patent/DE3586535D1/de
Publication of DE3586535T2 publication Critical patent/DE3586535T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE8585309507T 1984-12-28 1985-12-24 Gegen durchbruch geschuetzte transistoranordnung. Expired - Fee Related DE3586535T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59279937A JPS61158175A (ja) 1984-12-28 1984-12-28 プレ−ナ型トランジスタ装置

Publications (2)

Publication Number Publication Date
DE3586535D1 true DE3586535D1 (de) 1992-09-24
DE3586535T2 DE3586535T2 (de) 1993-02-18

Family

ID=17617989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585309507T Expired - Fee Related DE3586535T2 (de) 1984-12-28 1985-12-24 Gegen durchbruch geschuetzte transistoranordnung.

Country Status (4)

Country Link
US (1) US4716489A (de)
EP (1) EP0186518B1 (de)
JP (1) JPS61158175A (de)
DE (1) DE3586535T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008746B1 (ko) * 1986-11-19 1990-11-29 삼성전자 주식회사 접합 파괴장치 반도체장치
KR900001746B1 (ko) * 1987-01-24 1990-03-19 삼성반도체통신 주식회사 바이 씨 모스에 의한 고전압 대전력 구동회로
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US7139157B2 (en) * 2004-07-30 2006-11-21 Kyocera Wireless Corp. System and method for protecting a load from a voltage source
JP2006278514A (ja) * 2005-03-28 2006-10-12 Denso Corp 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336503A (en) * 1965-08-06 1967-08-15 Dickson Electronics Corp D.c. circuit breaker with automatic reset
US3601625A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Mosic with protection against voltage surges
JPS5011389A (de) * 1973-05-30 1975-02-05
JPS579291B2 (de) * 1974-02-04 1982-02-20
JPS5650448B2 (de) * 1974-03-08 1981-11-28
US3970869A (en) * 1975-03-03 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Low power driver
JPS553691A (en) * 1978-06-13 1980-01-11 Ibm Integrated circuit having junction field effect transistor
US4355341A (en) * 1980-06-30 1982-10-19 Rca Corporation Power protection circuit for transistors
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4441116A (en) * 1981-07-13 1984-04-03 National Semiconductor Corporation Controlling secondary breakdown in bipolar power transistors
US4495536A (en) * 1982-12-27 1985-01-22 Motorola, Inc. Voltage transient protection circuit

Also Published As

Publication number Publication date
EP0186518A3 (en) 1988-01-07
US4716489A (en) 1987-12-29
EP0186518B1 (de) 1992-08-19
JPS61158175A (ja) 1986-07-17
DE3586535T2 (de) 1993-02-18
EP0186518A2 (de) 1986-07-02

Similar Documents

Publication Publication Date Title
MX9202937A (es) Pseudo-aminoazucares n-substituidos.
FI851311L (fi) Destruktion av miljoefarligt avfall.
FI833160A (fi) Vaermeanordning foer glasspolvaetskan i motorfordon o.dyl
FI850868L (fi) Elektroniskt stroe-system.
FI851514L (fi) Organiska foereningar.
DE3689433D1 (de) Feldeffekttransistor.
FI840682A (fi) Stabiliserad hoegeffektiv radiofrekvensfoerstaerkare.
DE3887716D1 (de) Transistor.
NO158450C (no) Spenneanordning.
DE3878975D1 (de) Integrierte schaltung, geschuetzt gegen ueberspannungen.
DE3583064D1 (de) Supraleitender transistor.
DE3677141D1 (de) Feldeffekttransistoranordnung.
DE68924843D1 (de) Transistordurchbruchs-schutzschaltung.
DE3575182D1 (de) Befestigungsvorrichtungen.
DE3688318D1 (de) Feldeffekttransistor.
DE3585873D1 (de) Vinylbenzyl-2,2,6,6-tetramethylpiperidine.
DE3687425D1 (de) Transistoranordnung.
DE3586535D1 (de) Gegen durchbruch geschuetzte transistoranordnung.
DE3773276D1 (de) Transistoranordnung.
DE3680713D1 (de) Eingangsschutzanordnung.
NO861742L (no) Spenneanordning.
NO853986L (no) Beskyttelsesanordning.
NO850664L (no) Stabiliseringsanordning.
FI850131L (fi) N-(naftylalkyl)-hydroxylaminer.
DE3686087D1 (de) Feldeffekttransistor.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee