DE3584994D1 - Vorrichtung und verfahren zum herstellen von mustern mit schmaler linienbreite. - Google Patents

Vorrichtung und verfahren zum herstellen von mustern mit schmaler linienbreite.

Info

Publication number
DE3584994D1
DE3584994D1 DE8585107252T DE3584994T DE3584994D1 DE 3584994 D1 DE3584994 D1 DE 3584994D1 DE 8585107252 T DE8585107252 T DE 8585107252T DE 3584994 T DE3584994 T DE 3584994T DE 3584994 D1 DE3584994 D1 DE 3584994D1
Authority
DE
Germany
Prior art keywords
line width
narrow line
producing patterns
patterns
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585107252T
Other languages
German (de)
English (en)
Inventor
Gerd Karl Dr Binnig
Randall Meindert Feenstra
Rodney Trevor Hodgson
Heinrich Dr Rohrer
Jerry Mac Pherson Woodall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3584994D1 publication Critical patent/DE3584994D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31738—Direct-write microstructures using STM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31759—Lithography using particular beams or near-field effects, e.g. STM-like techniques using near-field effects, e.g. STM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8585107252T 1984-06-29 1985-06-14 Vorrichtung und verfahren zum herstellen von mustern mit schmaler linienbreite. Expired - Lifetime DE3584994D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/626,178 US4550257A (en) 1984-06-29 1984-06-29 Narrow line width pattern fabrication

Publications (1)

Publication Number Publication Date
DE3584994D1 true DE3584994D1 (de) 1992-02-06

Family

ID=24509285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107252T Expired - Lifetime DE3584994D1 (de) 1984-06-29 1985-06-14 Vorrichtung und verfahren zum herstellen von mustern mit schmaler linienbreite.

Country Status (4)

Country Link
US (1) US4550257A (enExample)
EP (1) EP0166308B1 (enExample)
JP (1) JPS6118156A (enExample)
DE (1) DE3584994D1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566937A (en) * 1984-10-10 1986-01-28 The United States Of America As Represented By The United States Department Of Energy Electron beam enhanced surface modification for making highly resolved structures
DE3570012D1 (en) * 1985-01-29 1989-06-08 Ibm Field-emission scanning auger electron microscope
US4618767A (en) * 1985-03-22 1986-10-21 International Business Machines Corporation Low-energy scanning transmission electron microscope
US4785189A (en) * 1985-04-29 1988-11-15 International Business Machines Corporation Method and apparatus for low-energy scanning electron beam lithography
ATE66092T1 (de) * 1986-12-07 1991-08-15 Lasarray Holding Ag Verfahren und vorrichtung zur erzeugung von materialstrukturen im bereich atomarer dimensionen.
DE3771711D1 (de) * 1987-05-12 1991-08-29 Ibm Atomares kraeftemikroskop mit oscillierendem quarz.
US4844945A (en) * 1988-05-18 1989-07-04 Hewlett-Packard Company Process for producing patterns in dielectric layers formed by plasma enhanced chemical vapor deposition (PECVD)
JPH02173278A (ja) * 1988-12-26 1990-07-04 Hitachi Ltd 微細加工方法及びその装置
SU1833046A1 (ru) * 1989-05-12 1996-10-20 Институт Радиотехники И Электроники Ан Ссср Сканирующий туннельный микроскоп
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5021672A (en) * 1989-12-22 1991-06-04 E. I. Du Pont De Nemours And Company Etching of nanoscale structures
DE69131528T2 (de) * 1990-05-30 2000-05-04 Hitachi, Ltd. Verfahren und Vorrichtung zur Behandlung eines sehr kleinen Bereichs einer Probe
US5369372A (en) * 1990-12-13 1994-11-29 Interuniversitair Micro Elektronica Centrum Vzw Method for resistance measurements on a semiconductor element with controlled probe pressure
US5047649A (en) * 1990-10-09 1991-09-10 International Business Machines Corporation Method and apparatus for writing or etching narrow linewidth patterns on insulating materials
US5304535A (en) * 1990-10-29 1994-04-19 E. I. Du Pont De Nemours And Company Etching of nanoscale structures on high temperature superconductors
US5204588A (en) * 1991-01-14 1993-04-20 Sony Corporation Quantum phase interference transistor
US5397420A (en) * 1991-03-03 1995-03-14 Nippondenso Co., Ltd. Fine structure forming device
JP3270165B2 (ja) * 1993-01-22 2002-04-02 セイコーインスツルメンツ株式会社 表面分析及び加工装置
JP3054900B2 (ja) * 1993-03-10 2000-06-19 セイコーインスツルメンツ株式会社 微細加工装置
US5474640A (en) * 1993-07-19 1995-12-12 Applied Materials, Inc. Apparatus for marking a substrate using ionized gas
US5674409A (en) * 1995-03-16 1997-10-07 International Business Machines Corporation Nanolithographic method of forming fine lines
KR100331451B1 (ko) * 2000-05-10 2002-04-09 윤종용 탄소 함유 물질을 이용한 재기록 가능한 데이타 스토리지및 그 기록/재생 방법
DE10230675B4 (de) * 2002-07-04 2007-01-25 Infineon Technologies Ag Verfahren zur Herstellung von Phasenschiebermasken
US20040060904A1 (en) * 2002-09-30 2004-04-01 International Business Machines Corporation Tool having a plurality of electrodes and corresponding method of altering a very small surface
US20050016954A1 (en) * 2003-07-25 2005-01-27 International Business Machines Corporation System and methods of altering a very small surface area
KR100810018B1 (ko) 2003-11-12 2008-03-07 인터내셔널 비지네스 머신즈 코포레이션 기판 상에 구조체를 패터닝하는 장치 및 방법
US9298285B2 (en) * 2013-12-05 2016-03-29 Wacom Co., Ltd. Stylus tip shape

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658572A (en) * 1968-11-05 1972-04-25 Westinghouse Electric Corp Pyrolytic coatings of molybdenum sulfide by plasma jet technique
US4197332A (en) * 1977-10-26 1980-04-08 International Business Machines Corporation Sub 100A range line width pattern fabrication
US4316093A (en) * 1979-02-12 1982-02-16 International Business Machines Corporation Sub-100A range line width pattern fabrication
CH643397A5 (de) * 1979-09-20 1984-05-30 Ibm Raster-tunnelmikroskop.
US4382186A (en) * 1981-01-12 1983-05-03 Energy Sciences Inc. Process and apparatus for converged fine line electron beam treatment of objects
DE3235064A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb
DE3483982D1 (de) * 1983-06-29 1991-02-28 Siemens Ag Verfahren zur herstellung einer elektrisch leitfaehigen verbindung und vorrichtung zur durchfuehrung eines solchen verfahrens.

Also Published As

Publication number Publication date
EP0166308A3 (en) 1989-02-08
US4550257A (en) 1985-10-29
JPH039615B2 (enExample) 1991-02-08
JPS6118156A (ja) 1986-01-27
EP0166308A2 (en) 1986-01-02
EP0166308B1 (en) 1991-12-27

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Legal Events

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8364 No opposition during term of opposition