DE3565128D1 - Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas - Google Patents

Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas

Info

Publication number
DE3565128D1
DE3565128D1 DE8585201184T DE3565128T DE3565128D1 DE 3565128 D1 DE3565128 D1 DE 3565128D1 DE 8585201184 T DE8585201184 T DE 8585201184T DE 3565128 T DE3565128 T DE 3565128T DE 3565128 D1 DE3565128 D1 DE 3565128D1
Authority
DE
Germany
Prior art keywords
subjected
manufacturing
treatment
reaction gas
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585201184T
Other languages
English (en)
Inventor
Jan Visser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3565128D1 publication Critical patent/DE3565128D1/de
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D8/00—Cold traps; Cold baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
DE8585201184T 1984-08-30 1985-07-12 Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas Expired DE3565128D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8402636A NL8402636A (nl) 1984-08-30 1984-08-30 Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een halfgeleidersubstraat wordt onderworpen aan een behandeling in een reaktiegas.

Publications (1)

Publication Number Publication Date
DE3565128D1 true DE3565128D1 (en) 1988-10-27

Family

ID=19844386

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585201184T Expired DE3565128D1 (en) 1984-08-30 1985-07-12 Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas

Country Status (6)

Country Link
US (1) US4647338A (de)
EP (1) EP0174673B1 (de)
JP (1) JPS6167226A (de)
CA (1) CA1235234A (de)
DE (1) DE3565128D1 (de)
NL (1) NL8402636A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271724A (ja) * 1985-09-25 1987-04-02 Oi Seisakusho Co Ltd 車両のサンル−フ装置
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
US5456945A (en) * 1988-12-27 1995-10-10 Symetrix Corporation Method and apparatus for material deposition
US5246526A (en) * 1989-06-29 1993-09-21 Hitachi, Ltd. Surface treatment apparatus
EP0504420B1 (de) * 1990-10-05 1997-07-23 Fujitsu Limited Wasserdampfversorgungseinrichtung
US5463872A (en) * 1994-09-08 1995-11-07 International Business Machines Corporation High performance thermal interface for low temperature electronic modules
US6342135B1 (en) * 1995-11-02 2002-01-29 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
JPH09129561A (ja) * 1995-11-06 1997-05-16 Teisan Kk ガス回収装置
US6436253B1 (en) 1998-05-20 2002-08-20 Taiwan Semiconductor Manufacturing Company Sputter etching chamber with improved uniformity
DE19830842C1 (de) 1998-07-09 1999-10-07 Siemens Ag Vorrichtung zum Abscheiden von Substanzen
US6300255B1 (en) * 1999-02-24 2001-10-09 Applied Materials, Inc. Method and apparatus for processing semiconductive wafers
DE10136022B4 (de) * 2001-07-24 2006-01-12 Robert Bosch Gmbh Verfahren zur Vermeidung oder Beseitigung von Ausscheidungen im Abgasbereich einer Vakuumanlage
US20050148199A1 (en) * 2003-12-31 2005-07-07 Frank Jansen Apparatus for atomic layer deposition
DE102005005709B4 (de) * 2005-01-31 2009-06-10 Technische Universität Dresden Einrichtung zur Bearbeitung von Materialoberflächen
CN110387537B (zh) * 2018-04-20 2021-10-15 北京北方华创微电子装备有限公司 一种原子层沉积设备及气体传输方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
US4285710A (en) * 1978-09-18 1981-08-25 Varian Associates, Inc. Cryogenic device for restricting the pumping speed of selected gases
DD201461A1 (de) * 1981-12-24 1983-07-20 Hecht Hans Christian Verfahren zur erzeugung eines oertlich konstanten arbeitsgasdruckes
US4401507A (en) * 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
JPS5955022A (ja) * 1982-09-24 1984-03-29 Fujitsu Ltd ドライエツチング方法
US4551197A (en) * 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants

Also Published As

Publication number Publication date
EP0174673B1 (de) 1988-09-21
JPS6167226A (ja) 1986-04-07
CA1235234A (en) 1988-04-12
US4647338A (en) 1987-03-03
EP0174673A1 (de) 1986-03-19
NL8402636A (nl) 1986-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee