DE3560913D1 - A liquid-phase epitaxial growth method of a iiib-vb group compound - Google Patents

A liquid-phase epitaxial growth method of a iiib-vb group compound

Info

Publication number
DE3560913D1
DE3560913D1 DE8585300510T DE3560913T DE3560913D1 DE 3560913 D1 DE3560913 D1 DE 3560913D1 DE 8585300510 T DE8585300510 T DE 8585300510T DE 3560913 T DE3560913 T DE 3560913T DE 3560913 D1 DE3560913 D1 DE 3560913D1
Authority
DE
Germany
Prior art keywords
iiib
liquid
epitaxial growth
growth method
group compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585300510T
Other languages
English (en)
Inventor
Yasuji Kohashi
Toshio Ishiwatari
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11823184&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3560913(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Kasei Corp, Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Kasei Corp
Application granted granted Critical
Publication of DE3560913D1 publication Critical patent/DE3560913D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8585300510T 1984-01-27 1985-01-25 A liquid-phase epitaxial growth method of a iiib-vb group compound Expired DE3560913D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59013080A JPS60161397A (ja) 1984-01-27 1984-01-27 液相エピタキシヤル成長方法

Publications (1)

Publication Number Publication Date
DE3560913D1 true DE3560913D1 (en) 1987-12-10

Family

ID=11823184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585300510T Expired DE3560913D1 (en) 1984-01-27 1985-01-25 A liquid-phase epitaxial growth method of a iiib-vb group compound

Country Status (4)

Country Link
US (1) US4609411A (de)
EP (1) EP0151000B1 (de)
JP (1) JPS60161397A (de)
DE (1) DE3560913D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326716A (en) * 1986-02-11 1994-07-05 Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy
US6955858B2 (en) * 2001-12-07 2005-10-18 North Carolina State University Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
US4088514A (en) * 1975-04-17 1978-05-09 Matsushita Electric Industrial Co., Ltd. Method for epitaxial growth of thin semiconductor layer from solution
JPS55138230A (en) * 1979-04-13 1980-10-28 Sanyo Electric Co Ltd Method for gaas liquid-phase epitaxial growth
JPS6026080B2 (ja) * 1979-11-21 1985-06-21 シャープ株式会社 液相エピタキシャル成長方法
JPS57123897A (en) * 1981-01-17 1982-08-02 Omron Tateisi Electronics Co Forming method of compound semiconductor crystal
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4507157A (en) * 1981-05-07 1985-03-26 General Electric Company Simultaneously doped light-emitting diode formed by liquid phase epitaxy
JPS58130199A (ja) * 1982-01-25 1983-08-03 Nippon Telegr & Teleph Corp <Ntt> ＧａＳｂ単結晶の育成方法
US4540450A (en) * 1982-06-02 1985-09-10 The United States Of America As Represented By The Secretary Of The Air Force InP:Te Protective layer process for reducing substrate dissociation

Also Published As

Publication number Publication date
JPH0351674B2 (de) 1991-08-07
EP0151000A2 (de) 1985-08-07
JPS60161397A (ja) 1985-08-23
EP0151000A3 (en) 1985-08-21
US4609411A (en) 1986-09-02
EP0151000B1 (de) 1987-11-04

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: MITSUBISHI MONSANTO CHEMICAL CO., LTD. MITSUBISHI

8328 Change in the person/name/address of the agent

Free format text: WEY, H., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: MITSUBISHI KASEI POLYTEC CO. MITSUBISHI KASEI CORP

8331 Complete revocation