DE3560781D1 - Turn-off thyristor with an anode-sided gate - Google Patents

Turn-off thyristor with an anode-sided gate

Info

Publication number
DE3560781D1
DE3560781D1 DE8585401035T DE3560781T DE3560781D1 DE 3560781 D1 DE3560781 D1 DE 3560781D1 DE 8585401035 T DE8585401035 T DE 8585401035T DE 3560781 T DE3560781 T DE 3560781T DE 3560781 D1 DE3560781 D1 DE 3560781D1
Authority
DE
Germany
Prior art keywords
thyristor
anode
turn
sided gate
sided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585401035T
Other languages
English (en)
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Semiconducteurs SA
Original Assignee
Thomson Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Semiconducteurs SA filed Critical Thomson Semiconducteurs SA
Application granted granted Critical
Publication of DE3560781D1 publication Critical patent/DE3560781D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8585401035T 1984-05-30 1985-05-28 Turn-off thyristor with an anode-sided gate Expired DE3560781D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8408493A FR2565409B1 (fr) 1984-05-30 1984-05-30 Thyristor blocable a gachette d'anode

Publications (1)

Publication Number Publication Date
DE3560781D1 true DE3560781D1 (en) 1987-11-19

Family

ID=9304545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585401035T Expired DE3560781D1 (en) 1984-05-30 1985-05-28 Turn-off thyristor with an anode-sided gate

Country Status (3)

Country Link
EP (1) EP0164292B1 (de)
DE (1) DE3560781D1 (de)
FR (1) FR2565409B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
CH670528A5 (de) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
DE3832208A1 (de) * 1988-09-22 1990-03-29 Asea Brown Boveri Steuerbares leistungshalbleiterbauelement
CN108550572B (zh) * 2018-03-02 2023-08-25 中国工程物理研究院电子工程研究所 碳化硅门极可关断晶闸管gto的器件阵列与其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089024A (en) * 1972-09-20 1978-05-09 Hitachi, Ltd. Semiconductor switching device
GB1558840A (en) * 1977-02-07 1980-01-09 Rca Corp Gate controlled semiconductor device
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
FR2565409A1 (fr) 1985-12-06
FR2565409B1 (fr) 1986-08-22
EP0164292A1 (de) 1985-12-11
EP0164292B1 (de) 1987-10-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee