DE3484169D1 - Lichtgesteuerter monolitischer nulldurchgangstreiber fuer einer triac. - Google Patents
Lichtgesteuerter monolitischer nulldurchgangstreiber fuer einer triac.Info
- Publication number
- DE3484169D1 DE3484169D1 DE8484109496T DE3484169T DE3484169D1 DE 3484169 D1 DE3484169 D1 DE 3484169D1 DE 8484109496 T DE8484109496 T DE 8484109496T DE 3484169 T DE3484169 T DE 3484169T DE 3484169 D1 DE3484169 D1 DE 3484169D1
- Authority
- DE
- Germany
- Prior art keywords
- monolitical
- triac
- zero
- controlled
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/525,196 US4553041A (en) | 1983-08-22 | 1983-08-22 | Monolithic zero crossing triac driver |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3484169D1 true DE3484169D1 (de) | 1991-04-04 |
Family
ID=24092318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484109496T Expired - Lifetime DE3484169D1 (de) | 1983-08-22 | 1984-08-09 | Lichtgesteuerter monolitischer nulldurchgangstreiber fuer einer triac. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4553041A (de) |
EP (1) | EP0141926B1 (de) |
JP (1) | JPS6060763A (de) |
DE (1) | DE3484169D1 (de) |
HK (1) | HK77695A (de) |
SG (1) | SG38193G (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4884681A (en) * | 1988-10-28 | 1989-12-05 | Ethicon, Inc. | Retainer for surgical sutures |
US5204541A (en) * | 1991-06-28 | 1993-04-20 | Texas Instruments Incorporated | Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices |
US5686857A (en) * | 1996-02-06 | 1997-11-11 | Motorola, Inc. | Zero-crossing triac and method |
KR20140077499A (ko) * | 2012-12-14 | 2014-06-24 | 에스케이하이닉스 주식회사 | 저항 변화 메모리 장치 및 그 제조방법 |
JP7033274B2 (ja) * | 2018-11-12 | 2022-03-10 | オムロン株式会社 | センサ及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3777188A (en) * | 1972-09-15 | 1973-12-04 | Motorola Inc | Light sensitive gating of trial near or at zero crossing point |
US4015143A (en) * | 1974-03-11 | 1977-03-29 | Hitachi, Ltd. | Semiconductor switch |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
JPS5233466A (en) * | 1975-09-10 | 1977-03-14 | Hitachi Ltd | Semiconductor switch |
US4084110A (en) * | 1975-10-01 | 1978-04-11 | Hitachi, Ltd. | Semiconductor switch |
US4396932A (en) * | 1978-06-16 | 1983-08-02 | Motorola, Inc. | Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other |
JPS55133131A (en) * | 1979-04-04 | 1980-10-16 | Toshiba Corp | Solid-state switch unit |
DE2922301C2 (de) * | 1979-05-31 | 1985-04-25 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung |
US4295058A (en) * | 1979-06-07 | 1981-10-13 | Eaton Corporation | Radiant energy activated semiconductor switch |
JPS5636228A (en) * | 1979-08-31 | 1981-04-09 | Fujitsu Ltd | Photo coupling element |
-
1983
- 1983-08-22 US US06/525,196 patent/US4553041A/en not_active Expired - Lifetime
-
1984
- 1984-08-09 EP EP84109496A patent/EP0141926B1/de not_active Expired - Lifetime
- 1984-08-09 DE DE8484109496T patent/DE3484169D1/de not_active Expired - Lifetime
- 1984-08-21 JP JP59173989A patent/JPS6060763A/ja active Granted
-
1993
- 1993-04-06 SG SG381/93A patent/SG38193G/en unknown
-
1995
- 1995-05-18 HK HK77695A patent/HK77695A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0141926A2 (de) | 1985-05-22 |
JPS6060763A (ja) | 1985-04-08 |
EP0141926A3 (en) | 1987-04-29 |
US4553041A (en) | 1985-11-12 |
EP0141926B1 (de) | 1991-02-27 |
JPH0444848B2 (de) | 1992-07-23 |
SG38193G (en) | 1993-06-11 |
HK77695A (en) | 1995-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. (N.D.GE |
|
8339 | Ceased/non-payment of the annual fee |