DE3474222D1 - Apparatus for the continuous deposition of a polycrystalline silicon layer on a carbon ribbon - Google Patents
Apparatus for the continuous deposition of a polycrystalline silicon layer on a carbon ribbonInfo
- Publication number
- DE3474222D1 DE3474222D1 DE8484110062T DE3474222T DE3474222D1 DE 3474222 D1 DE3474222 D1 DE 3474222D1 DE 8484110062 T DE8484110062 T DE 8484110062T DE 3474222 T DE3474222 T DE 3474222T DE 3474222 D1 DE3474222 D1 DE 3474222D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon layer
- polycrystalline silicon
- carbon ribbon
- continuous deposition
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/12—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length
- B05C3/125—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating work of indefinite length the work being a web, band, strip or the like
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8313834A FR2551233B1 (fr) | 1983-08-29 | 1983-08-29 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
FR8319212A FR2556109B2 (fr) | 1983-08-29 | 1983-12-01 | Dispositif pour deposer en regime continu une couche de silicium polycristallin sur un ruban de carbone |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3474222D1 true DE3474222D1 (en) | 1988-10-27 |
Family
ID=26223566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484110062T Expired DE3474222D1 (en) | 1983-08-29 | 1984-08-23 | Apparatus for the continuous deposition of a polycrystalline silicon layer on a carbon ribbon |
Country Status (6)
Country | Link |
---|---|
US (1) | US4577588A (de) |
EP (1) | EP0141114B1 (de) |
AU (1) | AU564654B2 (de) |
CA (1) | CA1224026A (de) |
DE (1) | DE3474222D1 (de) |
FR (1) | FR2556109B2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2592064B1 (fr) * | 1985-12-23 | 1988-02-12 | Elf Aquitaine | Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin |
JPS62151358A (ja) * | 1985-12-26 | 1987-07-06 | Toshiba Corp | サ−マルヘツド |
US4910453A (en) * | 1987-10-15 | 1990-03-20 | Ade Corporation | Multi-probe grouping system with nonlinear error correction |
US5047386A (en) * | 1988-12-29 | 1991-09-10 | Troy Investments Inc. | Apparatus for continuous manufacture of high temperature superconducting wires from molten superconducting oxides |
WO1997012841A1 (fr) * | 1995-10-06 | 1997-04-10 | Sumitomo Electric Industries, Ltd. | Procede et equipement permettant de recouvrir une fibre optique |
US6200383B1 (en) | 1999-05-03 | 2001-03-13 | Evergreen Solar, Inc. | Melt depth control for semiconductor materials grown from a melt |
DE10146791A1 (de) * | 2001-09-20 | 2003-04-10 | Sms Demag Ag | Verfahren und Vorrichtung zum Beschichten der Oberfläche von strangförmigem metallischem Gut |
EP1556529B1 (de) * | 2002-10-18 | 2007-09-12 | Evergreen Solar Inc. | Verfahren und vorrichtung zur kristallzüchtung |
US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
DE10254306A1 (de) * | 2002-11-21 | 2004-06-03 | Sms Demag Ag | Verfahren und Vorrichtung zur Schmelztauchbeschichtung eines Metallstranges |
NL1026043C2 (nl) * | 2004-04-26 | 2005-10-27 | Stichting Energie | Werkwijze en inrichting voor het fabriceren van metalen folies. |
FR2896254B1 (fr) * | 2006-01-17 | 2008-03-21 | Solarforce Soc Par Actions Sim | Tirage symetrique de rubans composites |
KR101314668B1 (ko) * | 2012-02-07 | 2013-10-04 | 최대규 | 소재의 가공장치 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
US3740563A (en) * | 1971-06-25 | 1973-06-19 | Monsanto Co | Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals |
US3730962A (en) * | 1971-08-24 | 1973-05-01 | Airco Inc | Electron beam furance with material-evaporant equilibrium control |
US3738312A (en) * | 1971-12-28 | 1973-06-12 | Bethlehem Steel Corp | Molten metal bath level maintenance system |
US3998598A (en) * | 1973-11-23 | 1976-12-21 | Semimetals, Inc. | Automatic diameter control for crystal growing facilities |
GB1532424A (en) * | 1975-09-15 | 1978-11-15 | Pilkington Brothers Ltd | Controlled method for the production of clad glass rod |
FR2386359A1 (fr) * | 1977-04-07 | 1978-11-03 | Labo Electronique Physique | Procede de depot par immersion en continu, dispositif et produits obtenus |
US4217165A (en) * | 1978-04-28 | 1980-08-12 | Ciszek Theodore F | Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width |
US4242589A (en) * | 1979-01-15 | 1980-12-30 | Mobil Tyco Solar Energy Corporation | Apparatus for monitoring crystal growth |
US4246868A (en) * | 1979-07-13 | 1981-01-27 | Westvaco Corporation | Envelope machine gum box |
CH641275A5 (fr) * | 1980-08-27 | 1984-02-15 | Cortaillod Cables Sa | Procede pour detecter optiquement et/ou mesurer une deformation et/ou un deplacement d'un objet ou partie d'objet, dispositif pour sa mise en oeuvre et application du procede. |
US4410270A (en) * | 1981-04-20 | 1983-10-18 | Litton Systems, Inc. | Angle position transducer |
US4383130A (en) * | 1981-05-04 | 1983-05-10 | Alpha Solarco Inc. | Solar energy cell and method of manufacture |
-
1983
- 1983-12-01 FR FR8319212A patent/FR2556109B2/fr not_active Expired
-
1984
- 1984-08-20 CA CA000461389A patent/CA1224026A/fr not_active Expired
- 1984-08-23 DE DE8484110062T patent/DE3474222D1/de not_active Expired
- 1984-08-23 EP EP84110062A patent/EP0141114B1/de not_active Expired
- 1984-08-28 US US06/644,910 patent/US4577588A/en not_active Expired - Fee Related
- 1984-08-28 AU AU32469/84A patent/AU564654B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US4577588A (en) | 1986-03-25 |
AU3246984A (en) | 1985-03-07 |
FR2556109A2 (fr) | 1985-06-07 |
AU564654B2 (en) | 1987-08-20 |
FR2556109B2 (fr) | 1986-09-12 |
EP0141114A1 (de) | 1985-05-15 |
EP0141114B1 (de) | 1988-09-21 |
CA1224026A (fr) | 1987-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |