DE3472331D1 - Focused ion beam column - Google Patents

Focused ion beam column

Info

Publication number
DE3472331D1
DE3472331D1 DE8484903206T DE3472331T DE3472331D1 DE 3472331 D1 DE3472331 D1 DE 3472331D1 DE 8484903206 T DE8484903206 T DE 8484903206T DE 3472331 T DE3472331 T DE 3472331T DE 3472331 D1 DE3472331 D1 DE 3472331D1
Authority
DE
Germany
Prior art keywords
ion beam
focused ion
beam column
focused
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484903206T
Other languages
English (en)
Inventor
Charles Mckenna
William Clark
Robert Seliger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3472331D1 publication Critical patent/DE3472331D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
DE8484903206T 1983-07-12 1984-06-25 Focused ion beam column Expired DE3472331D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/512,879 US4556798A (en) 1983-07-12 1983-07-12 Focused ion beam column
PCT/US1984/000982 WO1985000693A1 (en) 1983-07-12 1984-06-25 Focused ion beam column

Publications (1)

Publication Number Publication Date
DE3472331D1 true DE3472331D1 (en) 1988-07-28

Family

ID=24040992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484903206T Expired DE3472331D1 (en) 1983-07-12 1984-06-25 Focused ion beam column

Country Status (6)

Country Link
US (1) US4556798A (de)
EP (1) EP0155283B1 (de)
JP (1) JPH0628145B2 (de)
CA (1) CA1214577A (de)
DE (1) DE3472331D1 (de)
WO (1) WO1985000693A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
JPS60243960A (ja) * 1984-05-18 1985-12-03 Hitachi Ltd イオンマイクロビ−ム装置
JPS61237421A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置の製造方法
JPH0685309B2 (ja) * 1985-12-13 1994-10-26 株式会社日立製作所 液体金属イオン源
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
JPH071681B2 (ja) * 1990-04-19 1995-01-11 株式会社日立製作所 荷電粒子線装置
US5156997A (en) * 1991-02-11 1992-10-20 Microelectronics And Computer Technology Corporation Method of making semiconductor bonding bumps using metal cluster ion deposition
US5331172A (en) * 1991-02-11 1994-07-19 Microelectronics And Computer Technology Corporation Ionized metal cluster beam systems and methods
US5241182A (en) * 1991-06-18 1993-08-31 Fei Company Precision electrostatic lens system and method of manufacture
US6583426B1 (en) * 1997-09-10 2003-06-24 Hitachi, Ltd. Projection ion beam machining apparatus
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
EP2027594B1 (de) * 2005-07-08 2011-12-14 NexGen Semi Holding, Inc. Vorrichtung und Verfahren zur kontrollierten Fertigung von Halbleitern mittels Teilchenstrahlen
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
JP2008166137A (ja) * 2006-12-28 2008-07-17 Sii Nanotechnology Inc 集束イオンビーム装置
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723733A (en) * 1971-05-12 1973-03-27 Hughes Aircraft Co Stigmatic, crossed-field velocity filter
US3937958A (en) * 1975-03-31 1976-02-10 Minnesota Mining And Manufacturing Company Charged particle beam apparatus
US4426582A (en) * 1980-01-21 1984-01-17 Oregon Graduate Center Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
US4318029A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source
US4367429A (en) * 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources
WO1982004351A1 (en) * 1981-05-26 1982-12-09 Aircraft Co Hughes Focused ion beam microfabrication column

Also Published As

Publication number Publication date
JPS60501828A (ja) 1985-10-24
CA1214577A (en) 1986-11-25
JPH0628145B2 (ja) 1994-04-13
EP0155283B1 (de) 1988-06-22
US4556798A (en) 1985-12-03
WO1985000693A1 (en) 1985-02-14
EP0155283A1 (de) 1985-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee