DE3465828D1 - Method of forming contiguous self-aligned implanted semiconductor regions and method of forming an integrated cmos structure - Google Patents

Method of forming contiguous self-aligned implanted semiconductor regions and method of forming an integrated cmos structure

Info

Publication number
DE3465828D1
DE3465828D1 DE8484302894T DE3465828T DE3465828D1 DE 3465828 D1 DE3465828 D1 DE 3465828D1 DE 8484302894 T DE8484302894 T DE 8484302894T DE 3465828 T DE3465828 T DE 3465828T DE 3465828 D1 DE3465828 D1 DE 3465828D1
Authority
DE
Germany
Prior art keywords
forming
semiconductor regions
cmos structure
integrated cmos
implanted semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484302894T
Other languages
English (en)
Inventor
James Hu Genda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3465828D1 publication Critical patent/DE3465828D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
DE8484302894T 1983-05-02 1984-04-30 Method of forming contiguous self-aligned implanted semiconductor regions and method of forming an integrated cmos structure Expired DE3465828D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/490,766 US4471523A (en) 1983-05-02 1983-05-02 Self-aligned field implant for oxide-isolated CMOS FET

Publications (1)

Publication Number Publication Date
DE3465828D1 true DE3465828D1 (en) 1987-10-08

Family

ID=23949374

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484302894T Expired DE3465828D1 (en) 1983-05-02 1984-04-30 Method of forming contiguous self-aligned implanted semiconductor regions and method of forming an integrated cmos structure

Country Status (4)

Country Link
US (1) US4471523A (de)
EP (1) EP0127335B1 (de)
JP (1) JPS59204232A (de)
DE (1) DE3465828D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
US4662061A (en) * 1985-02-27 1987-05-05 Texas Instruments Incorporated Method for fabricating a CMOS well structure
US4685194A (en) * 1985-10-21 1987-08-11 The United States Of America As Represented By The Secretary Of The Air Force Direct moat self-aligned field oxide technique
EP0313683A1 (de) * 1987-10-30 1989-05-03 International Business Machines Corporation Verfahren zur Herstellung einer halbleitenden integrierten Schaltungsstruktur, die ein submikrometrisches Bauelement enthält
US5045898A (en) 1988-08-30 1991-09-03 At&T Bell Laboratories CMOS integrated circuit having improved isolation
US4895520A (en) * 1989-02-02 1990-01-23 Standard Microsystems Corporation Method of fabricating a submicron silicon gate MOSFETg21 which has a self-aligned threshold implant
DE69030822T2 (de) * 1989-02-14 1997-11-27 Seiko Epson Corp Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US5132236A (en) * 1991-07-30 1992-07-21 Micron Technology, Inc. Method of semiconductor manufacture using an inverse self-aligned mask
US6071775A (en) * 1997-02-21 2000-06-06 Samsung Electronics Co., Ltd. Methods for forming peripheral circuits including high voltage transistors with LDD structures
US6040604A (en) * 1997-07-21 2000-03-21 Motorola, Inc. Semiconductor component comprising an electrostatic-discharge protection device
CN1219328C (zh) * 1998-02-19 2005-09-14 国际商业机器公司 具有改善了注入剂的场效应晶体管及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1503017A (en) * 1974-02-28 1978-03-08 Tokyo Shibaura Electric Co Method of manufacturing semiconductor devices
US4217149A (en) * 1976-09-08 1980-08-12 Sanyo Electric Co., Ltd. Method of manufacturing complementary insulated gate field effect semiconductor device by multiple implantations and diffusion
US4135955A (en) * 1977-09-21 1979-01-23 Harris Corporation Process for fabricating high voltage cmos with self-aligned guard rings utilizing selective diffusion and local oxidation
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
JPS5529116A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Manufacture of complementary misic
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate
US4282648A (en) * 1980-03-24 1981-08-11 Intel Corporation CMOS process
JPS5779667A (en) * 1980-11-05 1982-05-18 Fujitsu Ltd Manufacture of semiconductor device
US4374700A (en) * 1981-05-29 1983-02-22 Texas Instruments Incorporated Method of manufacturing silicide contacts for CMOS devices
JPS5810857A (ja) * 1981-07-10 1983-01-21 Nec Corp 相補型ｍｏｓ半導体装置
JPS5817657A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置
US4385947A (en) * 1981-07-29 1983-05-31 Harris Corporation Method for fabricating CMOS in P substrate with single guard ring using local oxidation
US4411058A (en) * 1981-08-31 1983-10-25 Hughes Aircraft Company Process for fabricating CMOS devices with self-aligned channel stops
US4412375A (en) * 1982-06-10 1983-11-01 Intel Corporation Method for fabricating CMOS devices with guardband

Also Published As

Publication number Publication date
EP0127335A1 (de) 1984-12-05
EP0127335B1 (de) 1987-09-02
US4471523A (en) 1984-09-18
JPH0244154B2 (de) 1990-10-02
JPS59204232A (ja) 1984-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee