DE3431114A1 - ELECTRICAL RESISTANCE - Google Patents

Description

UDO Adnlf Schindling AG Eräfstralie 103

6DDD Frankfurt / Main

G-R Kl-krno / 1786 3D. July

Electrical resistance

The invention relates to an electrical resistor, in particular Strain gauges, with a metallic lüi-, the standing layer and the Kantekt layers assigned to it, which are applied to a carrier. 5

With such resistors that can be used as strain gauges it is known to apply a metallic resistance layer to a carrier. This allows sensitivities of the strain gauge with a K-factor of 1D reach a maximum of etuia 5.

Strain gauges with a K-factor in this order of magnitude but require a great deal of effort in the measuring device connected downstream of it. In addition, it is not a big one Resolution of the measurement possible.

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The object of the invention is therefore to provide a resistor The generic term to create an increased sensitivity having.

This object is achieved according to the invention in that on several overlapping metallic liner strips ~ sta idsschichten are applied, between which each a partially conductive insulation layer is arranged the partial conductivity can e.g. by a very low 1D Dic: e or dEr through consciously admitted contamination Isolation layer can be achieved. This leads to a mutual electrical influence on the resistance layers , Lyo depending on the number of layers A n UES Significant increase in the K-factor above the value 5 In addition, up to K-factors for the addition of ID and 15 are achieved.

Is to avoid impairments _v emanating from the carrier can uienn this example conductive can between the Trä-

, ger and the closest metallic resistance layer

ν 20 one; Insulation layer arranged ssin.

Negative influences such as horror can affect the wearer the most distant metallic resistance layer They are prevented from leaving the porter on their way Be covered by an insulation layer.

Είπε low temperature dependence up to temperatures of etujc 15D C can be achieved if the metallic resistance layer is a chromium layer or a layer containing chromium.

Silicon layers are particularly suitable as insulation layers bzuj. Layers containing silicon, such as layers made of silicon oxide or silicon dioxide. 35

To achieve good solderability, the contact layers preferably copper layers.

Particularly suitable methods for applying the resistance layers and / or the insulation layers and / or the contact layers are sputtering and puffing.

An embodiment of the invention is shown in the drawing and is described in more detail below. The single figure of the drawing shows one according to the invention Resistance in cross section.

1G The resistor shown has a support 1, which can consist of glass, for example. A first insulation layer 2, a first resistance layer 3, a second insulation layer k, a second resistance layer 5 and a third insulation layer S are applied to this carrier 1 in the manner of a sandujich, for example by sputtering.

On both ends of the third insulation layer 6 are also Hontaktschichten 7 applied, which as

Soldering points for connecting the resistor to a measuring circuit to serve.

It goes without saying that the alternating number of insulation layers and resistance layers to increase the K-factor can still be increased.

The resistance layers consist of chromium, while the insulation layers consist of silicon monoxide or silicon dioxide can exist.

The contact layers 7 consist of a chrome layer 7 applied to the insulation layer S, which in turn carries ^{a 3D copper finish 7 11.}

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Claims (7)

Claims 1. Electrical Lüiderstanderstand, in particular strain gauges, with a metallic Uliderstandschii.'ht and this associated contact layers, which are applied to ι inen carrier, characterized in that it is on the
Carrier (1) several superimposed metal resistance layers (3, 5) are applied, between each of which a partially conductive insulation layer (4)
is arranged. 1D 2. Resistor according to Claim 1, characterized in that an insulation layer (2) is arranged between the carrier (1) and the metallic resistance layer (3) closest to it. 3. Resistor according to one of the preceding claims, characterized in that the metal- EPO COPY lLschG resistance layer (5) on its carrier (1) The opposite side is covered by an insulation layer (6) is. 4th iLiiderstandss according to one of the preceding claims, characterized in that the metallic Liuiderstandss: hichtss (3, 5) εϊηε chrome layer bzuj. is a chromium-containing layer. 5. resistance since d urch according to one of the preceding claims characterized in that the insulating layers (2,4, 6) bzuj silicon layers. Layers containing silicon see. η d. G. LiI .derstand according to any one of the preceding claims, urch d in that the layers are Hantaktschichten (7) Hupfer-. 7. LLJ resistor according to any one of the preceding claims, characterized DA 2D d urch that the lüiderstandsschichten (3,5) and / or the IsolatiDnsschichten (2,4, S) and / or the clock Hein layers (7) are deposited by sputtering. B. Resistor according to one of claims 1 to 6, characterized in that . It indicates that the resistance layers (3, 5) and / or the insulation layers (2, 4, 6) and / or the contact layer (7) are vapor-deposited. COPY