DE3381632D1 - Speicherschaltung mit mitteln zum nachweis der speisespannung. - Google Patents

Speicherschaltung mit mitteln zum nachweis der speisespannung.

Info

Publication number
DE3381632D1
DE3381632D1 DE8383108582T DE3381632T DE3381632D1 DE 3381632 D1 DE3381632 D1 DE 3381632D1 DE 8383108582 T DE8383108582 T DE 8383108582T DE 3381632 T DE3381632 T DE 3381632T DE 3381632 D1 DE3381632 D1 DE 3381632D1
Authority
DE
Germany
Prior art keywords
detecting
supply voltage
memory circuit
memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383108582T
Other languages
German (de)
English (en)
Inventor
Takayuki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3381632D1 publication Critical patent/DE3381632D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16557—Logic probes, i.e. circuits indicating logic state (high, low, O)
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/571—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overvoltage detector
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
DE8383108582T 1982-08-31 1983-08-31 Speicherschaltung mit mitteln zum nachweis der speisespannung. Expired - Lifetime DE3381632D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150844A JPS5940393A (ja) 1982-08-31 1982-08-31 メモリ回路

Publications (1)

Publication Number Publication Date
DE3381632D1 true DE3381632D1 (de) 1990-07-12

Family

ID=15505609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383108582T Expired - Lifetime DE3381632D1 (de) 1982-08-31 1983-08-31 Speicherschaltung mit mitteln zum nachweis der speisespannung.

Country Status (4)

Country Link
US (1) US4631707A (OSRAM)
EP (1) EP0102618B1 (OSRAM)
JP (1) JPS5940393A (OSRAM)
DE (1) DE3381632D1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
GB8611794D0 (en) * 1986-05-14 1986-06-25 Gen Electric Co Plc Microprocessor back-up system
US5001670A (en) * 1987-02-06 1991-03-19 Tektronix, Inc. Nonvolatile memory protection
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
JPS6444618A (en) * 1987-08-13 1989-02-17 Toshiba Corp Reset signal generating circuit
US4800532A (en) * 1987-11-25 1989-01-24 Siemens Aktiengesellschaft Circuit arrangement with a processor and at least two read-write memories
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
JP2614514B2 (ja) * 1989-05-19 1997-05-28 三菱電機株式会社 ダイナミック・ランダム・アクセス・メモリ
DE69120483T2 (de) * 1990-08-17 1996-11-14 Sgs Thomson Microelectronics Halbleiter-Speicher mit unterdrücktem Testmodus-Eingang während des Strom-Einschaltens
US5121358A (en) * 1990-09-26 1992-06-09 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with power-on reset controlled latched row line repeaters
US5124951A (en) * 1990-09-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with sequenced latched row line repeaters
US5424986A (en) * 1991-12-19 1995-06-13 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with power-on reset control of disabled rows
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
WO1997000518A1 (en) * 1995-06-14 1997-01-03 Hitachi, Ltd. Semiconductor memory, memory device, and memory card
US5884084A (en) * 1996-10-31 1999-03-16 Intel Corporation Circuit and method for using early reset to prevent CMOS corruption with advanced power supplies
US5940345A (en) * 1997-12-12 1999-08-17 Cypress Semiconductor Corp. Combinational logic feedback circuit to ensure correct power-on-reset of a four-bit synchronous shift register
JP4549711B2 (ja) * 2004-03-29 2010-09-22 ルネサスエレクトロニクス株式会社 半導体回路装置
KR101707266B1 (ko) * 2013-08-29 2017-02-15 엘에스산전 주식회사 Plc에서의 os의 업데이트 장치 및 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713072B2 (OSRAM) * 1975-02-10 1982-03-15
JPS53120548A (en) * 1977-03-30 1978-10-21 Toshiba Corp Battery life display system
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories
CH657712A5 (de) * 1978-03-08 1986-09-15 Hitachi Ltd Referenzspannungserzeuger.
US4288865A (en) * 1980-02-06 1981-09-08 Mostek Corporation Low-power battery backup circuit for semiconductor memory
JPS56122132U (OSRAM) * 1980-02-18 1981-09-17

Also Published As

Publication number Publication date
JPS5940393A (ja) 1984-03-06
EP0102618A3 (en) 1987-07-29
EP0102618A2 (en) 1984-03-14
US4631707A (en) 1986-12-23
EP0102618B1 (en) 1990-06-06
JPH0241838B2 (OSRAM) 1990-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP