DE3380469D1 - Integrated circuit contact structure - Google Patents

Integrated circuit contact structure

Info

Publication number
DE3380469D1
DE3380469D1 DE8383305513T DE3380469T DE3380469D1 DE 3380469 D1 DE3380469 D1 DE 3380469D1 DE 8383305513 T DE8383305513 T DE 8383305513T DE 3380469 T DE3380469 T DE 3380469T DE 3380469 D1 DE3380469 D1 DE 3380469D1
Authority
DE
Germany
Prior art keywords
integrated circuit
contact structure
circuit contact
integrated
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383305513T
Other languages
German (de)
English (en)
Inventor
Mohamed Osama Aboelfotoh
Yuk Lun Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3380469D1 publication Critical patent/DE3380469D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
DE8383305513T 1982-09-20 1983-09-20 Integrated circuit contact structure Expired DE3380469D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41967782A 1982-09-20 1982-09-20

Publications (1)

Publication Number Publication Date
DE3380469D1 true DE3380469D1 (en) 1989-09-28

Family

ID=23663275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383305513T Expired DE3380469D1 (en) 1982-09-20 1983-09-20 Integrated circuit contact structure

Country Status (3)

Country Link
EP (1) EP0104079B1 (https=)
JP (1) JPS5974668A (https=)
DE (1) DE3380469D1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741757B2 (ja) * 1986-04-30 1998-04-22 株式会社日立製作所 半導体装置及びその製造方法
JPS6316671A (ja) * 1986-07-08 1988-01-23 Nec Corp シリサイドゲ−ト半導体装置の製造方法
FR2624304B1 (fr) * 1987-12-04 1990-05-04 Philips Nv Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium
JP2818060B2 (ja) * 1991-11-01 1998-10-30 シャープ株式会社 半導体装置の製造方法
JP2690468B2 (ja) * 1995-03-24 1997-12-10 株式会社日立製作所 半導体装置
CN1794983B (zh) * 2003-05-28 2012-07-18 大塚制药株式会社 奥兰西丁水溶液及其制备方法和消毒剂
JP4750586B2 (ja) 2006-02-28 2011-08-17 住友電工デバイス・イノベーション株式会社 半導体装置および電子装置並びにその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833842A (en) * 1970-03-09 1974-09-03 Texas Instruments Inc Modified tungsten metallization for semiconductor devices
JPS50120581A (https=) * 1974-03-07 1975-09-20
JPS5950104B2 (ja) * 1975-11-13 1984-12-06 日本電気株式会社 ハンドウタイソウチ
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture

Also Published As

Publication number Publication date
EP0104079A3 (en) 1986-08-20
EP0104079A2 (en) 1984-03-28
JPH0454393B2 (https=) 1992-08-31
JPS5974668A (ja) 1984-04-27
EP0104079B1 (en) 1989-08-23

Similar Documents

Publication Publication Date Title
GB2130833B (en) Interface circuit
JPS5732674A (en) Integrated circuit structure
GB2125620B (en) Integrated circuit array
GB8316270D0 (en) Circuit arrangement
GB8309726D0 (en) Integrated circuit arrangement
GB8331096D0 (en) Electrical circuits
EP0107028A3 (en) Circuit arrangement
EP0102786A3 (en) Resilient circuit board contact
GB8333133D0 (en) Sample-&-hold circuit
GB8328851D0 (en) Circuit arrangement
GB8305972D0 (en) Circuit
GB8322814D0 (en) Circuit
GB8304856D0 (en) Circuit arrangement
DE3376927D1 (en) Integrated circuit base
GB8312055D0 (en) Circuit arrangement
GB8328605D0 (en) Integrated circuit
GB8305924D0 (en) Linear integrated circuit
GB2143371B (en) Three dimensional integrated circuit structure
DE3380469D1 (en) Integrated circuit contact structure
GB8300387D0 (en) Circuit arrangement
KR910006512B1 (en) Integrated circuit
GB8313517D0 (en) Circuit
GB8311645D0 (en) Circuit
GB8310400D0 (en) Demodulator circuit
GB8326201D0 (en) Circuit arrangements

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee