DE3379871D1 - A method of manufacturing an oxide single crystal - Google Patents
A method of manufacturing an oxide single crystalInfo
- Publication number
- DE3379871D1 DE3379871D1 DE8383305489T DE3379871T DE3379871D1 DE 3379871 D1 DE3379871 D1 DE 3379871D1 DE 8383305489 T DE8383305489 T DE 8383305489T DE 3379871 T DE3379871 T DE 3379871T DE 3379871 D1 DE3379871 D1 DE 3379871D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- single crystal
- oxide single
- oxide
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57162783A JPS5954690A (ja) | 1982-09-18 | 1982-09-18 | 結晶育成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3379871D1 true DE3379871D1 (en) | 1989-06-22 |
Family
ID=15761120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383305489T Expired DE3379871D1 (en) | 1982-09-18 | 1983-09-19 | A method of manufacturing an oxide single crystal |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0106547B1 (de) |
JP (1) | JPS5954690A (de) |
DE (1) | DE3379871D1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101910473A (zh) * | 2007-12-25 | 2010-12-08 | 株式会社水晶系统 | 浮区熔化装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1434740A (fr) * | 1964-05-23 | 1966-04-08 | Rikagaku Kenkyusho | Monocristal de ferrite et son procédé de fabrication |
FR1459875A (fr) * | 1965-08-11 | 1966-06-17 | Centre Nat Rech Scient | Perfectionnements apportés aux moyens pour ajuster à une valeur prédéterminée au cours d'un cycle thermique la teneur d'un corps en l'un de ses constituants volatils |
GB1294272A (en) * | 1970-08-05 | 1972-10-25 | Nippon Electric Co | Method of making orthoferrite single crystals |
JPS55130898A (en) * | 1979-04-02 | 1980-10-11 | Hitachi Ltd | Preparation of ferrite single crystal |
-
1982
- 1982-09-18 JP JP57162783A patent/JPS5954690A/ja active Pending
-
1983
- 1983-09-19 DE DE8383305489T patent/DE3379871D1/de not_active Expired
- 1983-09-19 EP EP83305489A patent/EP0106547B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0106547A3 (en) | 1986-01-22 |
EP0106547A2 (de) | 1984-04-25 |
JPS5954690A (ja) | 1984-03-29 |
EP0106547B1 (de) | 1989-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |