DE3370410D1 - Lateral dmos transistor device having an injector region - Google Patents
Lateral dmos transistor device having an injector regionInfo
- Publication number
- DE3370410D1 DE3370410D1 DE8383201786T DE3370410T DE3370410D1 DE 3370410 D1 DE3370410 D1 DE 3370410D1 DE 8383201786 T DE8383201786 T DE 8383201786T DE 3370410 T DE3370410 T DE 3370410T DE 3370410 D1 DE3370410 D1 DE 3370410D1
- Authority
- DE
- Germany
- Prior art keywords
- transistor device
- dmos transistor
- injector region
- lateral dmos
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45337482A | 1982-12-27 | 1982-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3370410D1 true DE3370410D1 (en) | 1987-04-23 |
Family
ID=23800325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383201786T Expired DE3370410D1 (en) | 1982-12-27 | 1983-12-15 | Lateral dmos transistor device having an injector region |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0115098B1 (de) |
JP (1) | JPS59151472A (de) |
CA (1) | CA1206627A (de) |
DE (1) | DE3370410D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3546745C2 (de) * | 1984-05-30 | 1994-06-30 | Toshiba Kawasaki Kk | Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation |
GB2173037A (en) * | 1985-03-29 | 1986-10-01 | Philips Electronic Associated | Semiconductor devices employing conductivity modulation |
US4989058A (en) * | 1985-11-27 | 1991-01-29 | North American Philips Corp. | Fast switching lateral insulated gate transistors |
CA1252225A (en) * | 1985-11-27 | 1989-04-04 | Sel Colak | Lateral insulated gate transistors with coupled anode and gate regions |
US4933740A (en) * | 1986-11-26 | 1990-06-12 | General Electric Company | Insulated gate transistor with vertical integral diode and method of fabrication |
JPS63173365A (ja) * | 1986-11-26 | 1988-07-16 | ゼネラル・エレクトリック・カンパニイ | ラテラル形絶縁ゲート半導体装置とその製法 |
US4866495A (en) * | 1987-05-27 | 1989-09-12 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
US4939566A (en) * | 1987-10-30 | 1990-07-03 | North American Philips Corporation | Semiconductor switch with parallel DMOS and IGT |
US4926074A (en) * | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
US6894349B2 (en) | 2001-06-08 | 2005-05-17 | Intersil Americas Inc. | Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5123432B2 (de) * | 1971-08-26 | 1976-07-16 | ||
FR2458907A1 (fr) * | 1979-06-12 | 1981-01-02 | Thomson Csf | Transistor a effet de champ a tension de seuil ajustable |
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
-
1983
- 1983-12-15 DE DE8383201786T patent/DE3370410D1/de not_active Expired
- 1983-12-15 EP EP83201786A patent/EP0115098B1/de not_active Expired
- 1983-12-22 CA CA000444070A patent/CA1206627A/en not_active Expired
- 1983-12-26 JP JP24438383A patent/JPS59151472A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0518267B2 (de) | 1993-03-11 |
EP0115098A1 (de) | 1984-08-08 |
CA1206627A (en) | 1986-06-24 |
JPS59151472A (ja) | 1984-08-29 |
EP0115098B1 (de) | 1987-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2080023B (en) | Lateral insulated gate field effect transistor | |
GB2127222B (en) | Mosfet with perimeter channel | |
DE3279955D1 (en) | Insulated gate field effect transistor | |
DE3275684D1 (en) | Insulated gate field effect transistor | |
GB8333134D0 (en) | Field-effect transistor circuits | |
GB2114006B (en) | Fitments for injection devices | |
EP0083815A3 (en) | Lateral junction field effect transistor device | |
EP0091831A3 (en) | Mobility-modulation field effect transistor | |
GB8325770D0 (en) | Gate driving device | |
EP0101608A3 (en) | Insulated gate type field effect transistor having a silicon gate electrode | |
DE3362975D1 (en) | Semiconductor device of the heterojunction transistor type | |
DE3370409D1 (en) | Lateral dmos transistor devices suitable for sourcefollower applications | |
DE3172979D1 (en) | Transistor with high collector-emitter breakdown voltage | |
GB8329006D0 (en) | Fuel treatment device | |
YU278180A (en) | Vertical mosfet device | |
GB2114237B (en) | Fuel treatment device | |
DE3370410D1 (en) | Lateral dmos transistor device having an injector region | |
JPS5715457A (en) | Bipolar transistor device | |
JPS56144613A (en) | Current stabilizing device with enhancement field effect transistor | |
EP0070744A3 (en) | Insulated gate field effect transistor | |
DE3380243D1 (en) | Insulated-gate field-effect transistors | |
GB2129473B (en) | An adjustable gate | |
GB2118734B (en) | Electro-optical device | |
DE3368712D1 (en) | Injection device | |
GB2125622B (en) | Field-effect controlled bi-directional lateral thyristor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |