DE3366261D1 - Switching power transistor having a digitated structure - Google Patents

Switching power transistor having a digitated structure

Info

Publication number
DE3366261D1
DE3366261D1 DE8383401285T DE3366261T DE3366261D1 DE 3366261 D1 DE3366261 D1 DE 3366261D1 DE 8383401285 T DE8383401285 T DE 8383401285T DE 3366261 T DE3366261 T DE 3366261T DE 3366261 D1 DE3366261 D1 DE 3366261D1
Authority
DE
Germany
Prior art keywords
switching power
power transistor
digitated structure
digitated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401285T
Other languages
German (de)
English (en)
Inventor
Jacques Arnould
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3366261D1 publication Critical patent/DE3366261D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
DE8383401285T 1982-06-25 1983-06-21 Switching power transistor having a digitated structure Expired DE3366261D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8211211A FR2529389A1 (fr) 1982-06-25 1982-06-25 Transistor de commutation de puissance a structure digitee

Publications (1)

Publication Number Publication Date
DE3366261D1 true DE3366261D1 (en) 1986-10-23

Family

ID=9275426

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401285T Expired DE3366261D1 (en) 1982-06-25 1983-06-21 Switching power transistor having a digitated structure

Country Status (3)

Country Link
EP (1) EP0098209B1 (enExample)
DE (1) DE3366261D1 (enExample)
FR (1) FR2529389A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3788500T2 (de) * 1986-10-31 1994-04-28 Nippon Denso Co Bipolarer Halbleitertransistor.
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1084368B (it) * 1977-07-08 1985-05-25 Ates Componenti Elettron Transistore di potenza con alta velocita' di spegnimento e mezzi per ottenerlo.
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor

Also Published As

Publication number Publication date
FR2529389B1 (enExample) 1984-11-30
EP0098209A1 (fr) 1984-01-11
EP0098209B1 (fr) 1986-09-17
FR2529389A1 (fr) 1983-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee