FR2529389A1 - Transistor de commutation de puissance a structure digitee - Google Patents

Transistor de commutation de puissance a structure digitee Download PDF

Info

Publication number
FR2529389A1
FR2529389A1 FR8211211A FR8211211A FR2529389A1 FR 2529389 A1 FR2529389 A1 FR 2529389A1 FR 8211211 A FR8211211 A FR 8211211A FR 8211211 A FR8211211 A FR 8211211A FR 2529389 A1 FR2529389 A1 FR 2529389A1
Authority
FR
France
Prior art keywords
base
layer
transmitter
metallization
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8211211A
Other languages
English (en)
French (fr)
Other versions
FR2529389B1 (enExample
Inventor
Jacques Arnould
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8211211A priority Critical patent/FR2529389A1/fr
Priority to EP83401285A priority patent/EP0098209B1/fr
Priority to DE8383401285T priority patent/DE3366261D1/de
Publication of FR2529389A1 publication Critical patent/FR2529389A1/fr
Application granted granted Critical
Publication of FR2529389B1 publication Critical patent/FR2529389B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
FR8211211A 1982-06-25 1982-06-25 Transistor de commutation de puissance a structure digitee Granted FR2529389A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR8211211A FR2529389A1 (fr) 1982-06-25 1982-06-25 Transistor de commutation de puissance a structure digitee
EP83401285A EP0098209B1 (fr) 1982-06-25 1983-06-21 Transistor de commutation de puissance à structure digitée
DE8383401285T DE3366261D1 (en) 1982-06-25 1983-06-21 Switching power transistor having a digitated structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8211211A FR2529389A1 (fr) 1982-06-25 1982-06-25 Transistor de commutation de puissance a structure digitee

Publications (2)

Publication Number Publication Date
FR2529389A1 true FR2529389A1 (fr) 1983-12-30
FR2529389B1 FR2529389B1 (enExample) 1984-11-30

Family

ID=9275426

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8211211A Granted FR2529389A1 (fr) 1982-06-25 1982-06-25 Transistor de commutation de puissance a structure digitee

Country Status (3)

Country Link
EP (1) EP0098209B1 (enExample)
DE (1) DE3366261D1 (enExample)
FR (1) FR2529389A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3788500T2 (de) * 1986-10-31 1994-04-28 Nippon Denso Co Bipolarer Halbleitertransistor.
US5387813A (en) * 1992-09-25 1995-02-07 National Semiconductor Corporation Transistors with emitters having at least three sides

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802799A1 (de) * 1977-07-08 1979-01-11 Ates Componenti Elettron Aus einem silicium-einkristall hergestellter leistungstransistor mit minoritaetstraegern
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802799A1 (de) * 1977-07-08 1979-01-11 Ates Componenti Elettron Aus einem silicium-einkristall hergestellter leistungstransistor mit minoritaetstraegern
US4296336A (en) * 1979-01-22 1981-10-20 General Semiconductor Co., Inc. Switching circuit and method for avoiding secondary breakdown

Also Published As

Publication number Publication date
FR2529389B1 (enExample) 1984-11-30
DE3366261D1 (en) 1986-10-23
EP0098209A1 (fr) 1984-01-11
EP0098209B1 (fr) 1986-09-17

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