DE3364513D1 - Emitter finger structure in a switching transistor and manufacturing process - Google Patents

Emitter finger structure in a switching transistor and manufacturing process

Info

Publication number
DE3364513D1
DE3364513D1 DE8383401076T DE3364513T DE3364513D1 DE 3364513 D1 DE3364513 D1 DE 3364513D1 DE 8383401076 T DE8383401076 T DE 8383401076T DE 3364513 T DE3364513 T DE 3364513T DE 3364513 D1 DE3364513 D1 DE 3364513D1
Authority
DE
Germany
Prior art keywords
manufacturing process
switching transistor
finger structure
emitter finger
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401076T
Other languages
German (de)
English (en)
Inventor
Philippe Bouard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3364513D1 publication Critical patent/DE3364513D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/136—Emitter regions of BJTs of heterojunction BJTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
DE8383401076T 1982-06-08 1983-05-27 Emitter finger structure in a switching transistor and manufacturing process Expired DE3364513D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8209954A FR2528233A1 (fr) 1982-06-08 1982-06-08 Structure de doigt d'emetteur dans un transistor de commutation

Publications (1)

Publication Number Publication Date
DE3364513D1 true DE3364513D1 (en) 1986-08-21

Family

ID=9274750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401076T Expired DE3364513D1 (en) 1982-06-08 1983-05-27 Emitter finger structure in a switching transistor and manufacturing process

Country Status (4)

Country Link
US (1) US4609414A (OSRAM)
EP (1) EP0096625B1 (OSRAM)
DE (1) DE3364513D1 (OSRAM)
FR (1) FR2528233A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
JP2775503B2 (ja) * 1990-03-13 1998-07-16 三菱電機株式会社 接合ゲート型電界効果トランジスタの製造方法
JP5061407B2 (ja) * 2001-01-31 2012-10-31 富士電機株式会社 半導体装置およびその製造方法
US10199529B2 (en) * 2008-05-28 2019-02-05 Solar-Tectic, Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3728592A (en) * 1969-05-09 1973-04-17 Ibm Semiconductor structure having reduced carrier lifetime
US3943549A (en) * 1972-03-15 1976-03-09 Bbc Brown, Boveri & Company, Limited Thyristor
JPS5342234B2 (OSRAM) * 1973-02-12 1978-11-09
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
GB2026236B (en) * 1978-07-20 1983-02-02 Gen Electric Power transistor
US4345266A (en) * 1978-07-20 1982-08-17 General Electric Company Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
FR2451106A1 (fr) * 1979-03-09 1980-10-03 Thomson Csf Dispositif semi-conducteur de commutation a frequence elevee

Also Published As

Publication number Publication date
EP0096625B1 (fr) 1986-07-16
EP0096625A1 (fr) 1983-12-21
FR2528233A1 (fr) 1983-12-09
FR2528233B1 (OSRAM) 1985-05-17
US4609414A (en) 1986-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee