DE3360684D1 - Glass composition for covering semiconductor elements - Google Patents

Glass composition for covering semiconductor elements

Info

Publication number
DE3360684D1
DE3360684D1 DE8383300127T DE3360684T DE3360684D1 DE 3360684 D1 DE3360684 D1 DE 3360684D1 DE 8383300127 T DE8383300127 T DE 8383300127T DE 3360684 T DE3360684 T DE 3360684T DE 3360684 D1 DE3360684 D1 DE 3360684D1
Authority
DE
Germany
Prior art keywords
semiconductor elements
glass composition
covering semiconductor
covering
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383300127T
Other languages
English (en)
Inventor
Kazuyoshi Furukawa
Masaru Shimbo
Kiyoshi Fukuda
Katsujirou Tanzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3360684D1 publication Critical patent/DE3360684D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE8383300127T 1982-01-21 1983-01-11 Glass composition for covering semiconductor elements Expired DE3360684D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007930A JPS58125638A (ja) 1982-01-21 1982-01-21 半導体被覆用ガラス組成物

Publications (1)

Publication Number Publication Date
DE3360684D1 true DE3360684D1 (en) 1985-10-10

Family

ID=11679236

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383300127T Expired DE3360684D1 (en) 1982-01-21 1983-01-11 Glass composition for covering semiconductor elements

Country Status (4)

Country Link
US (1) US4542105A (de)
EP (1) EP0084936B1 (de)
JP (1) JPS58125638A (de)
DE (1) DE3360684D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3346686C2 (de) * 1983-12-23 1986-11-27 Degussa Ag, 6000 Frankfurt Lumineszierende Gläser
DE3346685C2 (de) * 1983-12-23 1985-10-24 Degussa Ag, 6000 Frankfurt Blau lumineszierende Gläser
FR2566386A1 (fr) * 1984-06-22 1985-12-27 Labo Electronique Physique Melange de depart pour une composition isolante comprenant un verre au plomb, encre serigraphiable comportant un tel melange et utilisation de cette encre pour la protection de microcircuits hybrides sur substrat ceramique
NL8403076A (nl) * 1984-10-10 1986-05-01 Philips Nv Glassamenstelling geschikt voor gebruik in een fluorescentielamp en in een beeldbuis, fluorescentielamp en beeldbuis vervaardigd onder toepassing van deze glassamenstelling.
US4808673A (en) * 1986-10-02 1989-02-28 General Electric Company Dielectric inks for multilayer copper circuits
US4810420A (en) * 1986-10-02 1989-03-07 General Electric Company Thick film copper via-fill inks
US4808770A (en) * 1986-10-02 1989-02-28 General Electric Company Thick-film copper conductor inks
US4733018A (en) * 1986-10-02 1988-03-22 Rca Corporation Thick film copper conductor inks
US4772574A (en) * 1986-10-02 1988-09-20 General Electric Company Ceramic filled glass dielectrics
US4816615A (en) * 1987-08-20 1989-03-28 General Electric Company Thick film copper conductor inks
US4788163A (en) * 1987-08-20 1988-11-29 General Electric Company Devitrifying glass frits
US5298330A (en) * 1987-08-31 1994-03-29 Ferro Corporation Thick film paste compositions for use with an aluminum nitride substrate
US4959330A (en) * 1989-06-20 1990-09-25 E. I. Du Pont De Nemours And Company Crystallizable glass and thick film compositions thereof
JP3307918B2 (ja) * 1997-09-03 2002-07-29 オイペツク オイロペーイツシエ ゲゼルシヤフト フユール ライスツングスハルプライター エムベーハー ウント コンパニイ コマンデイートゲゼルシヤフト ホウ酸ガラス不動態化層のための防湿層
EP1065734B1 (de) * 1999-06-09 2009-05-13 Kabushiki Kaisha Toshiba Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
JP4039381B2 (ja) * 2004-03-25 2008-01-30 コニカミノルタオプト株式会社 ガラス組成物を用いた情報記録媒体用ガラス基板及びこれを用いた情報記録媒体
CN101585660B (zh) * 2009-06-23 2012-03-07 珠海彩珠实业有限公司 一种半导体钝化封装用铅硅铝系玻璃粉的制备方法
WO2011093177A1 (ja) * 2010-01-28 2011-08-04 日本電気硝子株式会社 半導体被覆用ガラスおよびそれを用いてなる半導体被覆用材料
CN103403846B (zh) * 2012-01-31 2016-07-06 新电元工业株式会社 半导体接合保护用玻璃复合物、半导体装置的制造方法及半导体装置
CN102898028B (zh) * 2012-09-27 2015-07-15 广州市儒兴科技开发有限公司 一种晶体硅太阳电池正面银浆用玻璃粉及其制备方法
JP6211862B2 (ja) * 2013-09-18 2017-10-11 エスアイアイ・セミコンダクタ株式会社 光半導体装置およびその製造方法
CN107673623B (zh) * 2017-08-28 2020-09-15 广州市儒兴科技开发有限公司 一种双面perc铝浆用玻璃粉及其制备方法
CN110806612A (zh) * 2018-08-06 2020-02-18 张家港康得新光电材料有限公司 滤光片及具有其的影像传感器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
JPS4935043A (de) * 1972-08-01 1974-04-01
JPS5110844B2 (de) * 1973-04-24 1976-04-07
DE2517743C3 (de) * 1975-04-22 1980-03-06 Jenaer Glaswerk Schott & Gen., 6500 Mainz Passivierender Schutzüberzug für Siliziumhalbleiterbauelemente
JPS5337715A (en) * 1976-09-21 1978-04-07 Asahi Glass Co Ltd Sealing glass
JPS5497616A (en) * 1978-01-18 1979-08-01 Tokyo Shibaura Electric Co Glass composition for coating semiconductor

Also Published As

Publication number Publication date
US4542105A (en) 1985-09-17
JPS58125638A (ja) 1983-07-26
EP0084936A1 (de) 1983-08-03
JPS6238300B2 (de) 1987-08-17
EP0084936B1 (de) 1985-09-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee