DE3348097A1 - - Google Patents

Info

Publication number
DE3348097A1
DE3348097A1 DE19833348097 DE3348097A DE3348097A1 DE 3348097 A1 DE3348097 A1 DE 3348097A1 DE 19833348097 DE19833348097 DE 19833348097 DE 3348097 A DE3348097 A DE 3348097A DE 3348097 A1 DE3348097 A1 DE 3348097A1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833348097
Other languages
German (de)
Other versions
DE3348097C2 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14180782A external-priority patent/JPS5932188A/ja
Priority claimed from JP23392482A external-priority patent/JPS59117187A/ja
Application filed filed Critical
Publication of DE3348097A1 publication Critical patent/DE3348097A1/de
Application granted granted Critical
Publication of DE3348097C2 publication Critical patent/DE3348097C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE19833348097 1982-08-16 1983-08-16 Expired DE3348097C2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (ja) 1982-08-16 1982-08-16 ビ−ム走査形半導体レ−ザ
JP23392482A JPS59117187A (ja) 1982-12-23 1982-12-23 光分岐用半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3348097A1 true DE3348097A1 (fr) 1986-10-02
DE3348097C2 DE3348097C2 (fr) 1989-03-30

Family

ID=26473975

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19833329467 Granted DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser
DE19833348097 Expired DE3348097C2 (fr) 1982-08-16 1983-08-16

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19833329467 Granted DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser

Country Status (2)

Country Link
DE (2) DE3329467A1 (fr)
GB (1) GB2127218B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur
DE4107850B4 (de) * 1990-03-10 2006-06-29 Daimlerchrysler Ag Anordnung zur Verbesserung der Sicht, insbesondere in Fahrzeugen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser
GB2080014A (en) * 1980-06-13 1982-01-27 Matsushita Electric Ind Co Ltd Semiconductor lasers
US4318059A (en) * 1979-06-13 1982-03-02 Nippon Electric Co., Ltd. Semiconductor laser device having plural active regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318059A (en) * 1979-06-13 1982-03-02 Nippon Electric Co., Ltd. Semiconductor laser device having plural active regions
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser
GB2080014A (en) * 1980-06-13 1982-01-27 Matsushita Electric Ind Co Ltd Semiconductor lasers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
SCIFRES, D.R. BURNHAM, R:D:, and STREIFER, W.: High power compled multiple stripe quantum well injetion Lasers. In:US-Z:Appl. Phys. Lett., Vol. 41, Nr. 2, 1982, S. 118-120 *
WAKAO, K. u.a.: Ga¶x¶Iu¶1-x¶As¶y¶P¶1-y¶/In P Terraced Substrate Single-Mode Laser. In: US-Z.: IEEE Journal of Qantum Electronics, Vol. QE-17, Nr. 6, 1981, S. 1009-1013 *
YONEZU, H. u.a.: High optical power density emission from a "window-stripe" AlGaAs double- heterostructure Laser. In: US-Z: Appl. Phys. Lett., Vol. 34, Nr. 10, 1979, S. 637-639 *

Also Published As

Publication number Publication date
GB2127218A (en) 1984-04-04
DE3329467C2 (fr) 1987-11-26
DE3329467A1 (de) 1984-02-16
DE3348097C2 (fr) 1989-03-30
GB8321788D0 (en) 1983-09-14
GB2127218B (en) 1986-05-21

Similar Documents

Publication Publication Date Title
FR2520616B1 (fr)
DE3348027A1 (fr)
FR2522905B1 (fr)
FR2523345B1 (fr)
FR2521665B1 (fr)
FR2519336B1 (fr)
FR2520169B3 (fr)
FR2520155B1 (fr)
DK344084D0 (fr)
DE3378479T2 (fr)
FR2520570B1 (fr)
FR2526339B1 (fr)
FR2519797B1 (fr)
FR2523060B3 (fr)
FR2519761B1 (fr)
FR2523840B3 (fr)
FR2519812B2 (fr)
FR2523293B1 (fr)
FR2521301B1 (fr)
FR2523925B3 (fr)
FR2523446B3 (fr)
FR2528093B1 (fr)
FR2524287B1 (fr)
FR2520944B1 (fr)
FR2531607B1 (fr)

Legal Events

Date Code Title Description
Q172 Divided out of (supplement):

Ref country code: DE

Ref document number: 3329467

8110 Request for examination paragraph 44
8181 Inventor (new situation)

Free format text: FUJIMOTO, AKIRA, HIRAKATA, OSAKA, JP

AC Divided out of

Ref country code: DE

Ref document number: 3329467

Format of ref document f/p: P

8125 Change of the main classification

Ipc: H01S 3/23

AC Divided out of

Ref country code: DE

Ref document number: 3329467

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee