DE3279633D1 - Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof - Google Patents

Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof

Info

Publication number
DE3279633D1
DE3279633D1 DE8282401195T DE3279633T DE3279633D1 DE 3279633 D1 DE3279633 D1 DE 3279633D1 DE 8282401195 T DE8282401195 T DE 8282401195T DE 3279633 T DE3279633 T DE 3279633T DE 3279633 D1 DE3279633 D1 DE 3279633D1
Authority
DE
Germany
Prior art keywords
fabrication
aligned
charge
self
coupled devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282401195T
Other languages
English (en)
Inventor
Rudolph H Dyck
James M Early
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of DE3279633D1 publication Critical patent/DE3279633D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8282401195T 1981-07-10 1982-06-28 Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof Expired DE3279633D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28219881A 1981-07-10 1981-07-10

Publications (1)

Publication Number Publication Date
DE3279633D1 true DE3279633D1 (en) 1989-05-24

Family

ID=23080482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282401195T Expired DE3279633D1 (en) 1981-07-10 1982-06-28 Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof

Country Status (4)

Country Link
EP (1) EP0069649B1 (de)
JP (1) JPS5817666A (de)
CA (1) CA1203326A (de)
DE (1) DE3279633D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132818B (en) * 1983-01-03 1987-08-19 Rca Corp Imaging array
GB8517081D0 (en) * 1985-07-05 1985-08-14 Gen Electric Co Plc Image sensors
DD247327A1 (de) * 1986-03-31 1987-07-01 Werk Fernsehelektronik Veb Ueberlaufanordnung fuer ladungssammelnde halbleitergebiete
DE4329838B4 (de) * 1993-09-03 2005-09-22 Hynix Semiconductor Inc., Ichon Festkörper-Bildsensor
DE69632172T2 (de) * 1995-02-21 2005-04-21 Dalsa Corp Ladungsgekoppelte bildaufnahmeanordnung
FR2932008B1 (fr) * 2008-06-03 2010-05-07 E2V Semiconductors Procede de fabrication de capteurs d'image ccd a petits pixels

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
US4125933A (en) * 1976-07-08 1978-11-21 Burroughs Corporation IGFET Integrated circuit memory cell
US4173064A (en) * 1977-08-22 1979-11-06 Texas Instruments Incorporated Split gate electrode, self-aligned antiblooming structure and method of making same
JPS5656682A (en) * 1979-10-16 1981-05-18 Toshiba Corp Manufacture of semiconductor device
JPS5658282A (en) * 1979-10-18 1981-05-21 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5817666A (ja) 1983-02-01
EP0069649B1 (de) 1989-04-19
EP0069649A3 (en) 1985-04-17
EP0069649A2 (de) 1983-01-12
CA1203326A (en) 1986-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee