DE3278660D1 - Avalanche photodiode - Google Patents
Avalanche photodiodeInfo
- Publication number
- DE3278660D1 DE3278660D1 DE8282305104T DE3278660T DE3278660D1 DE 3278660 D1 DE3278660 D1 DE 3278660D1 DE 8282305104 T DE8282305104 T DE 8282305104T DE 3278660 T DE3278660 T DE 3278660T DE 3278660 D1 DE3278660 D1 DE 3278660D1
- Authority
- DE
- Germany
- Prior art keywords
- avalanche photodiode
- avalanche
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154984A JPS5856481A (ja) | 1981-09-30 | 1981-09-30 | ゲルマニウム受光素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3278660D1 true DE3278660D1 (en) | 1988-07-14 |
Family
ID=15596166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8282305104T Expired DE3278660D1 (en) | 1981-09-30 | 1982-09-28 | Avalanche photodiode |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0076143B1 (enExample) |
| JP (1) | JPS5856481A (enExample) |
| CA (1) | CA1195414A (enExample) |
| DE (1) | DE3278660D1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
| CA1301895C (en) * | 1989-01-12 | 1992-05-26 | Robert J. Mcintyre | Silicon avalanche photodiode with low multiplication noise |
| GB8913198D0 (en) * | 1989-06-08 | 1989-07-26 | British Telecomm | Guard ring structure |
| US5477649A (en) * | 1993-04-30 | 1995-12-26 | Airtite Contractors Inc. | Raised floor cable trough system |
| EP1623466A1 (en) | 2003-05-14 | 2006-02-08 | University College Cork-National University of Ireland, Cork | A photodiode |
| CN110098270B (zh) * | 2019-04-18 | 2021-04-23 | 中国科学技术大学 | 雪崩光电二极管扩散结构的制备方法及二极管扩散结构 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7513161A (nl) * | 1975-11-11 | 1977-05-13 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze. |
-
1981
- 1981-09-30 JP JP56154984A patent/JPS5856481A/ja active Granted
-
1982
- 1982-09-28 EP EP82305104A patent/EP0076143B1/en not_active Expired
- 1982-09-28 DE DE8282305104T patent/DE3278660D1/de not_active Expired
- 1982-09-29 CA CA000412427A patent/CA1195414A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0076143A2 (en) | 1983-04-06 |
| CA1195414A (en) | 1985-10-15 |
| JPS6259903B2 (enExample) | 1987-12-14 |
| EP0076143B1 (en) | 1988-06-08 |
| JPS5856481A (ja) | 1983-04-04 |
| EP0076143A3 (en) | 1984-08-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8363 | Opposition against the patent | ||
| 8339 | Ceased/non-payment of the annual fee |