CA1195414A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
CA1195414A
CA1195414A CA000412427A CA412427A CA1195414A CA 1195414 A CA1195414 A CA 1195414A CA 000412427 A CA000412427 A CA 000412427A CA 412427 A CA412427 A CA 412427A CA 1195414 A CA1195414 A CA 1195414A
Authority
CA
Canada
Prior art keywords
type region
arsenic
apd
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000412427A
Other languages
English (en)
French (fr)
Inventor
Takashi Mikawa
Katsuji Honma
Shuzo Kagawa
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of CA1195414A publication Critical patent/CA1195414A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
CA000412427A 1981-09-30 1982-09-29 Avalanche photodiode Expired CA1195414A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP154984/81 1981-09-30
JP56154984A JPS5856481A (ja) 1981-09-30 1981-09-30 ゲルマニウム受光素子の製造方法

Publications (1)

Publication Number Publication Date
CA1195414A true CA1195414A (en) 1985-10-15

Family

ID=15596166

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000412427A Expired CA1195414A (en) 1981-09-30 1982-09-29 Avalanche photodiode

Country Status (4)

Country Link
EP (1) EP0076143B1 (enExample)
JP (1) JPS5856481A (enExample)
CA (1) CA1195414A (enExample)
DE (1) DE3278660D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233209A (en) * 1989-06-08 1993-08-03 Bt&D Technologies Ltd. Guard ring structure with graded be implantation

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
US5477649A (en) * 1993-04-30 1995-12-26 Airtite Contractors Inc. Raised floor cable trough system
EP1623466A1 (en) 2003-05-14 2006-02-08 University College Cork-National University of Ireland, Cork A photodiode
CN110098270B (zh) * 2019-04-18 2021-04-23 中国科学技术大学 雪崩光电二极管扩散结构的制备方法及二极管扩散结构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233209A (en) * 1989-06-08 1993-08-03 Bt&D Technologies Ltd. Guard ring structure with graded be implantation

Also Published As

Publication number Publication date
EP0076143A2 (en) 1983-04-06
DE3278660D1 (en) 1988-07-14
JPS6259903B2 (enExample) 1987-12-14
EP0076143B1 (en) 1988-06-08
JPS5856481A (ja) 1983-04-04
EP0076143A3 (en) 1984-08-29

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Legal Events

Date Code Title Description
MKEX Expiry
MKEX Expiry

Effective date: 20021015