DE3277343D1 - Method of adjusting the edge angle in polysilicon - Google Patents
Method of adjusting the edge angle in polysiliconInfo
- Publication number
- DE3277343D1 DE3277343D1 DE8282105173T DE3277343T DE3277343D1 DE 3277343 D1 DE3277343 D1 DE 3277343D1 DE 8282105173 T DE8282105173 T DE 8282105173T DE 3277343 T DE3277343 T DE 3277343T DE 3277343 D1 DE3277343 D1 DE 3277343D1
- Authority
- DE
- Germany
- Prior art keywords
- polysilicon
- adjusting
- edge angle
- edge
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP82105173A EP0096096B1 (de) | 1982-06-14 | 1982-06-14 | Verfahren zur Einstellung des Kantenwinkels in Polysilicium |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3277343D1 true DE3277343D1 (en) | 1987-10-22 |
Family
ID=8189085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282105173T Expired DE3277343D1 (en) | 1982-06-14 | 1982-06-14 | Method of adjusting the edge angle in polysilicon |
Country Status (4)
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469370A3 (en) * | 1990-07-31 | 1992-09-09 | Gold Star Co. Ltd | Etching process for sloped side walls |
KR970002427B1 (en) * | 1994-01-14 | 1997-03-05 | Lg Semicon Co Ltd | Fine patterning method of photoresist film |
US7022592B2 (en) * | 2003-10-03 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ammonia-treated polysilicon semiconductor device |
TWI258201B (en) * | 2005-02-16 | 2006-07-11 | Powerchip Semiconductor Corp | Method for manufacturing semiconductor device and plug |
CN104409324A (zh) * | 2014-11-12 | 2015-03-11 | 吉林华微电子股份有限公司 | 能够避免沾污的多晶硅磷掺杂后处理清洗方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3827908A (en) * | 1972-12-11 | 1974-08-06 | Ibm | Method for improving photoresist adherence |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
CH573661A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-01-02 | 1976-03-15 | Ibm | |
US3811076A (en) * | 1973-01-02 | 1974-05-14 | Ibm | Field effect transistor integrated circuit and memory |
JPS5218098B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-05-04 | 1977-05-19 | ||
US4004044A (en) * | 1975-05-09 | 1977-01-18 | International Business Machines Corporation | Method for forming patterned films utilizing a transparent lift-off mask |
US4160991A (en) * | 1977-10-25 | 1979-07-10 | International Business Machines Corporation | High performance bipolar device and method for making same |
-
1982
- 1982-06-14 DE DE8282105173T patent/DE3277343D1/de not_active Expired
- 1982-06-14 EP EP82105173A patent/EP0096096B1/de not_active Expired
-
1983
- 1983-04-18 JP JP58067174A patent/JPS58220431A/ja active Granted
- 1983-05-16 US US06/494,755 patent/US4452881A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0096096B1 (de) | 1987-09-16 |
EP0096096A1 (de) | 1983-12-21 |
US4452881A (en) | 1984-06-05 |
JPH0139647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-08-22 |
JPS58220431A (ja) | 1983-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |