DE3277343D1 - Method of adjusting the edge angle in polysilicon - Google Patents

Method of adjusting the edge angle in polysilicon

Info

Publication number
DE3277343D1
DE3277343D1 DE8282105173T DE3277343T DE3277343D1 DE 3277343 D1 DE3277343 D1 DE 3277343D1 DE 8282105173 T DE8282105173 T DE 8282105173T DE 3277343 T DE3277343 T DE 3277343T DE 3277343 D1 DE3277343 D1 DE 3277343D1
Authority
DE
Germany
Prior art keywords
polysilicon
adjusting
edge angle
edge
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282105173T
Other languages
German (de)
English (en)
Inventor
Wolfgang Augstein
Peter Frasch
Blanka Ivancic
Markus Dr Dipl Chem Zugel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
International Business Machines Corp
Original Assignee
IBM Deutschland GmbH
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH, International Business Machines Corp filed Critical IBM Deutschland GmbH
Application granted granted Critical
Publication of DE3277343D1 publication Critical patent/DE3277343D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
DE8282105173T 1982-06-14 1982-06-14 Method of adjusting the edge angle in polysilicon Expired DE3277343D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP82105173A EP0096096B1 (de) 1982-06-14 1982-06-14 Verfahren zur Einstellung des Kantenwinkels in Polysilicium

Publications (1)

Publication Number Publication Date
DE3277343D1 true DE3277343D1 (en) 1987-10-22

Family

ID=8189085

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282105173T Expired DE3277343D1 (en) 1982-06-14 1982-06-14 Method of adjusting the edge angle in polysilicon

Country Status (4)

Country Link
US (1) US4452881A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0096096B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58220431A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3277343D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0469370A3 (en) * 1990-07-31 1992-09-09 Gold Star Co. Ltd Etching process for sloped side walls
KR970002427B1 (en) * 1994-01-14 1997-03-05 Lg Semicon Co Ltd Fine patterning method of photoresist film
US7022592B2 (en) * 2003-10-03 2006-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Ammonia-treated polysilicon semiconductor device
TWI258201B (en) * 2005-02-16 2006-07-11 Powerchip Semiconductor Corp Method for manufacturing semiconductor device and plug
CN104409324A (zh) * 2014-11-12 2015-03-11 吉林华微电子股份有限公司 能够避免沾污的多晶硅磷掺杂后处理清洗方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827908A (en) * 1972-12-11 1974-08-06 Ibm Method for improving photoresist adherence
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
CH573661A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-01-02 1976-03-15 Ibm
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
JPS5218098B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-04 1977-05-19
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same

Also Published As

Publication number Publication date
EP0096096B1 (de) 1987-09-16
EP0096096A1 (de) 1983-12-21
US4452881A (en) 1984-06-05
JPH0139647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-08-22
JPS58220431A (ja) 1983-12-22

Similar Documents

Publication Publication Date Title
AU2125383A (en) Adjustable encclosure
GB2118457B (en) Edge runner mills
ZA838242B (en) Clearance-controlling means and methods
AU90562S (en) Pergola top
GB2129955B (en) Adjustable mountings
DE3364906D1 (en) Producing alkoxysilanes and alkoxy-oximinosilanes
DE3371885D1 (en) Adjustable anchorages
AU1113483A (en) Adjustable track
AU547724B2 (en) Adjustable louvre roof
GB2124827B (en) Thermistor- bolometer and method for the manufacture thereof
DE3277343D1 (en) Method of adjusting the edge angle in polysilicon
AU562214B2 (en) Dipeptides
DE3367618D1 (en) Improvement in lankacidins productions
GB2129473B (en) An adjustable gate
GB8332837D0 (en) Adjusting device
GB2126265B (en) Adjustable flooring
GB8324382D0 (en) Adjustable wrench
AU1570083A (en) Surface treatment
GB8314776D0 (en) Adjustable lock
GB8314725D0 (en) Press-piercing mills
GB2140841B (en) Adjustable roof-soffit ventilator
AU549221B2 (en) Adjustable fastener
GB8306081D0 (en) Rollermill
AU550459B2 (en) Authentication device
DE3373477D1 (en) Amino-substituted dibenzodioxaphosphepines and dioxaphosphocines

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee