DE3268183D1 - Method of producing a pedestal for mounting a semiconductor chip on the base of an encapsulating housing - Google Patents
Method of producing a pedestal for mounting a semiconductor chip on the base of an encapsulating housingInfo
- Publication number
- DE3268183D1 DE3268183D1 DE8282401979T DE3268183T DE3268183D1 DE 3268183 D1 DE3268183 D1 DE 3268183D1 DE 8282401979 T DE8282401979 T DE 8282401979T DE 3268183 T DE3268183 T DE 3268183T DE 3268183 D1 DE3268183 D1 DE 3268183D1
- Authority
- DE
- Germany
- Prior art keywords
- pedestal
- producing
- mounting
- base
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8120855A FR2516311B1 (fr) | 1981-11-06 | 1981-11-06 | Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3268183D1 true DE3268183D1 (en) | 1986-02-06 |
Family
ID=9263772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401979T Expired DE3268183D1 (en) | 1981-11-06 | 1982-10-26 | Method of producing a pedestal for mounting a semiconductor chip on the base of an encapsulating housing |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0079265B1 (de) |
JP (1) | JPS5885552A (de) |
DE (1) | DE3268183D1 (de) |
FR (1) | FR2516311B1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4905075A (en) * | 1986-05-05 | 1990-02-27 | General Electric Company | Hermetic semiconductor enclosure |
EP0244767A3 (de) * | 1986-05-05 | 1988-08-03 | Silicon Power Corporation | Hermetisches Halbleitergehäuse und Verfahren zum Herstellen |
US4695348A (en) * | 1986-09-15 | 1987-09-22 | Psi Star | Copper etching process and product |
DE3718684A1 (de) * | 1987-06-04 | 1988-12-22 | Licentia Gmbh | Halbleiterkoerper |
DE3843787A1 (de) * | 1988-12-24 | 1990-07-05 | Standard Elektrik Lorenz Ag | Verfahren und leiterplatte zum montieren eines halbleiter-bauelements |
EP0408904A3 (en) * | 1989-07-21 | 1992-01-02 | Motorola Inc. | Surface mounting semiconductor device and method |
US5220487A (en) * | 1992-01-27 | 1993-06-15 | International Business Machines Corporation | Electronic package with enhanced heat sinking |
US6956250B2 (en) | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3346950A (en) * | 1965-06-16 | 1967-10-17 | Ibm | Method of making through-connections by controlled punctures |
US3577037A (en) * | 1968-07-05 | 1971-05-04 | Ibm | Diffused electrical connector apparatus and method of making same |
GB2047466B (en) * | 1979-02-24 | 1983-03-30 | Int Computers Ltd | Multi-level connection networks |
IT8048031A0 (it) * | 1979-04-09 | 1980-02-28 | Raytheon Co | Perfezionamento nei dispositivi a semiconduttore ad effetto di campo |
-
1981
- 1981-11-06 FR FR8120855A patent/FR2516311B1/fr not_active Expired
-
1982
- 1982-10-26 DE DE8282401979T patent/DE3268183D1/de not_active Expired
- 1982-10-26 EP EP19820401979 patent/EP0079265B1/de not_active Expired
- 1982-11-04 JP JP57192625A patent/JPS5885552A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0079265A1 (de) | 1983-05-18 |
FR2516311B1 (fr) | 1985-10-11 |
FR2516311A1 (fr) | 1983-05-13 |
JPS5885552A (ja) | 1983-05-21 |
EP0079265B1 (de) | 1985-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |