DE3264100D1 - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
DE3264100D1
DE3264100D1 DE8282100816T DE3264100T DE3264100D1 DE 3264100 D1 DE3264100 D1 DE 3264100D1 DE 8282100816 T DE8282100816 T DE 8282100816T DE 3264100 T DE3264100 T DE 3264100T DE 3264100 D1 DE3264100 D1 DE 3264100D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282100816T
Other languages
English (en)
Inventor
Takao Kuroda
Takashi Kajimura
Yasutoshi Kashiwada
Naoki Chinone
Kunio Aiki
Jun-Ichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3264100D1 publication Critical patent/DE3264100D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8282100816T 1981-02-06 1982-02-04 Semiconductor laser device Expired DE3264100D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56015743A JPS57130490A (en) 1981-02-06 1981-02-06 Semiconductor laser device

Publications (1)

Publication Number Publication Date
DE3264100D1 true DE3264100D1 (en) 1985-07-18

Family

ID=11897237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282100816T Expired DE3264100D1 (en) 1981-02-06 1982-02-04 Semiconductor laser device

Country Status (5)

Country Link
US (1) US4432091A (de)
EP (1) EP0057919B1 (de)
JP (1) JPS57130490A (de)
CA (1) CA1167572A (de)
DE (1) DE3264100D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63258090A (ja) * 1987-04-15 1988-10-25 Sharp Corp 半導体レ−ザ装置
US4793679A (en) * 1987-04-20 1988-12-27 General Electric Company Optical coupling system
US4821276A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
US4821277A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
US4789881A (en) * 1987-04-20 1988-12-06 General Electric Company Low coherence optical system having reflective means
US4958355A (en) * 1989-03-29 1990-09-18 Rca Inc. High performance angled stripe superluminescent diode
US5396481A (en) * 1991-11-13 1995-03-07 Rohm Co., Ltd. Semiconductor laser device which emits inclined laser beam
JPH07106701A (ja) * 1993-10-05 1995-04-21 Mitsubishi Electric Corp 可視光半導体レーザ、及びその製造方法
DE69606701T2 (de) * 1995-11-08 2000-08-03 Uniphase Opto Holdings Inc., San Jose Halbleiterlaser, insbesondere laserverstärker und herstellungsverfahren dieses lasers
JPH10150244A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp 半導体装置のシミュレーション方法
US6804281B1 (en) 2001-01-23 2004-10-12 James N. Walpole Large modal volume semiconductor laser system with spatial mode filter
JP2004535679A (ja) * 2001-07-12 2004-11-25 テクストロン システムズ コーポレーション ジグザグレーザおよび光増幅器のための半導体
JP4780993B2 (ja) * 2005-03-31 2011-09-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
US7433376B1 (en) 2006-08-07 2008-10-07 Textron Systems Corporation Zig-zag laser with improved liquid cooling
DE102008054435A1 (de) * 2008-12-09 2010-06-10 Universität Zu Köln Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128994A (ja) * 1974-09-02 1976-03-11 Kobe Steel Ltd Hakuyosuishinjikufuranjitsugitebu no boshokuho
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
US4251780A (en) * 1978-07-03 1981-02-17 Xerox Corporation Stripe offset geometry in injection lasers to achieve transverse mode control
JPH05274292A (ja) * 1992-03-26 1993-10-22 Mitsubishi Heavy Ind Ltd クリストッフェル記号計算装置

Also Published As

Publication number Publication date
EP0057919B1 (de) 1985-06-12
EP0057919A3 (en) 1982-09-01
EP0057919A2 (de) 1982-08-18
CA1167572A (en) 1984-05-15
JPS6360556B2 (de) 1988-11-24
JPS57130490A (en) 1982-08-12
US4432091A (en) 1984-02-14

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee