DE3264019D1 - Process for forming a patterned mask using a positive electron beam resist - Google Patents

Process for forming a patterned mask using a positive electron beam resist

Info

Publication number
DE3264019D1
DE3264019D1 DE8282105012T DE3264019T DE3264019D1 DE 3264019 D1 DE3264019 D1 DE 3264019D1 DE 8282105012 T DE8282105012 T DE 8282105012T DE 3264019 T DE3264019 T DE 3264019T DE 3264019 D1 DE3264019 D1 DE 3264019D1
Authority
DE
Germany
Prior art keywords
forming
electron beam
patterned mask
beam resist
positive electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282105012T
Other languages
English (en)
Inventor
James Economy
Roy John Gritter
Hiroyuki Hiraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3264019D1 publication Critical patent/DE3264019D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8282105012T 1981-08-31 1982-06-08 Process for forming a patterned mask using a positive electron beam resist Expired DE3264019D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/298,138 US4379826A (en) 1981-08-31 1981-08-31 Positive electron beam resists of ortho chloro substituted phenol or cresol condensed with formaldehyde

Publications (1)

Publication Number Publication Date
DE3264019D1 true DE3264019D1 (en) 1985-07-11

Family

ID=23149215

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282105012T Expired DE3264019D1 (en) 1981-08-31 1982-06-08 Process for forming a patterned mask using a positive electron beam resist

Country Status (4)

Country Link
US (1) US4379826A (de)
EP (1) EP0073303B1 (de)
JP (1) JPS5842041A (de)
DE (1) DE3264019D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU580775B2 (en) * 1984-05-14 1989-02-02 Imperial Chemical Industries Plc Aromatic oligomers
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
JPH0650393B2 (ja) * 1985-07-30 1994-06-29 日本合成ゴム株式会社 ポジ型放射線感応性組成物
JPH02254450A (ja) * 1989-03-29 1990-10-15 Toshiba Corp レジスト

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
US3728293A (en) * 1972-03-13 1973-04-17 Dow Chemical Co Polyurethane compositions containing phenol-aldehyde resins and polyether polyols
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask

Also Published As

Publication number Publication date
JPS5842041A (ja) 1983-03-11
JPH0136925B2 (de) 1989-08-03
EP0073303B1 (de) 1985-06-05
EP0073303A1 (de) 1983-03-09
US4379826A (en) 1983-04-12

Similar Documents

Publication Publication Date Title
DE3162480D1 (en) Process for producing a patterned resist image
DE2861539D1 (en) Process for the fabrication of masks for lithographic processes using a photoresist
DE3266519D1 (en) Exposure process for transferring a mask pattern to a wafer
EP0083510A3 (en) Lithographic masks
DE2861132D1 (en) Process for forming a flow-resistant resist mask of radioation-sensitive material
GB2111698B (en) Method for producing a metal lithographic plate
DE3269563D1 (en) Process for forming resist patterns
GB2022855B (en) Method of producing a negative resist pattern
DE3378931D1 (en) Method for forming fine resist patterns
DE3268140D1 (en) A method of forming a patterned photoresist layer
DE3279316D1 (en) Electron beam exposing method
GB2060696B (en) Method for making shadow masks
DE3171230D1 (en) Process for forming a patterned resist mask
EP0153854A3 (en) Process for forming a pattern film
EP0127919A3 (en) Electron lithography mask manufacture
EP0165785A3 (en) Apparatus and method for forming a shadow mask from a flat blank
DE3360965D1 (en) Process for manufacturing a lithographic platen
GB2011635B (en) Resist and a process for forming a positive image pattern therewith
DE3264019D1 (en) Process for forming a patterned mask using a positive electron beam resist
EP0199300A3 (en) Method for making a mask having perpendicular side wall and method for making a patterned metal layer by using the former method
DE3067993D1 (en) Dry-developing photosensitive dry film resist, a solder mask made thereof, and process for using the dry film resist
EP0521721A3 (en) Method for manufacturing a shadow mask by resist etching
DE3070128D1 (en) Process for forming resist pattern
EP0306091A3 (en) Process for the production of a mask for radiation lithography
DE3271660D1 (en) Method for making crt shadow masks

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee