DE318010C - - Google Patents
Info
- Publication number
- DE318010C DE318010C DENDAT318010D DE318010DA DE318010C DE 318010 C DE318010 C DE 318010C DE NDAT318010 D DENDAT318010 D DE NDAT318010D DE 318010D A DE318010D A DE 318010DA DE 318010 C DE318010 C DE 318010C
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- contact
- detector
- metal
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000007935 neutral effect Effects 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 238000010410 dusting Methods 0.000 claims 2
- 238000005868 electrolysis reaction Methods 0.000 claims 2
- 238000005476 soldering Methods 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000035939 shock Effects 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Description
In der drahtlosen Telegraphic werden viele Detektoren benutzt, die dazu dienen, die Ströme hoher Frequenz in den Schwingungskreisen der Empfangsstation zum Ansprechen zu bringen. Entsprechend der. fortschreitenden ■ Entwicklung auf diesem Gebiete hat man immer mehr danach gestrebt, einen Detektor zu erfinden, der äußerst hohe und gleichzeitig unveränderliche Empfindlichkeit besitzt. Dieses Streben hat unter anderem zur Herstellung der sogenannten Kristalldetektoren geleitet, .bei welchen eine leitende Spitze' 0. dgl. gegen die Oberfläche eines unipolare Leitungsfähigkeit besitzenden Kristalles angedrückt gehalten wird.In wireless telegraphics, many detectors are used that serve to detect the High-frequency currents in the oscillating circuits of the receiving station to respond bring to. According to the. progressive ■ development in this area striving more and more to invent a detector that is extremely high and at the same time has invariable sensitivity. This pursuit has among other things to manufacture the so-called crystal detectors, .which a conductive tip '0. like. Against the surface of a crystal possessing unipolar conductivity held down will.
Ein Beispiel eines derartigen Detektors zeigt Fig. ι. der Zeichnung.An example of such a detector is shown in FIG. the drawing.
ι ist ein Kristallstückchen und 2 eine Schraube, die mit ihrer Spitze gegen dasι is a piece of crystal and 2 is a screw, the tip of which is against the
ao Kristallstückchen drückt. Die Schraube 2 wird von einer Metallstütze 3 getragen, die an einer isolierenden Unterlage 4 befestigt ist, welche außerdem eine Metallplatte 5 trägt, an der das Kristallstückchen festgelötet ist.ao pushes crystal pieces. The screw 2 is carried by a metal support 3 which is attached to an insulating base 4, which also carries a metal plate 5, to which the piece of crystal is soldered.
Leitungsdrähte 6, 7 sind z. B. in Klemmen 8 bzw. 9 der Metallplatte 5 bzw. der Stütze 3 befestigt. Dieser Detektor besitzt den Vorteil, daß er sehr empfindlich ist, gleichzeitig aber den Nachteil, daß schon die geringste Verschiebung des Kontaktpunktes zwischen der Schraube 2 und dem Kristallstückchen weitgehende Empfindlichkeitsänderungen des Detektors herbeiführen kann. Die Gründe dieser Mangelhaftigkeit des Detektors ergeben sich aus folgendem.Lead wires 6, 7 are, for. B. in terminals 8 or 9 of the metal plate 5 or the support 3 attached. This detector has the advantage that it is very sensitive at the same time but the disadvantage that even the slightest shift of the contact point between the screw 2 and the crystal piece extensive changes in sensitivity of the Detector can cause. The reasons for this deficiency of the detector are revealed result from the following.
Die vom Erfinder durchgeführte nähere Untersuchung der unipolaren Le^fähigkeit besonders des Molybdänglanzes hat ergeben, daß mit Stellen von positiver Gleichrichtwirkung häufig Stellen von negativer Wirkung in derselben Fläche des Kristalles nahe benachbart sind. (d. h. der gleichgerichtete Strom besitzt im zweiten Fall entgegengesetzte Richtung wie im ersten Fall). Zwischen den kleinen Bereichen, innerhalb deren die Gleichrichtwirkung der einen oder der anderen Art sehr stark ausgebildet ist, liegen andere Bereiche, innerhalb der sie schwach oder gar nicht vorhanden ist (neutrale Bereiche). Wird eine derartige ganze Kristallfläche oder ein großer Teil derselben mit einem metallischen Leiter in Berührung gebracht nnd Wechselstrom durch die Berührungsfläche gesandt, so findet daselbst keine Gleichrichtung des Stromes statt, weil er in der einen Richtung durch die positiven und die neutralen Bereiche geht und in der anderen Richtung auf die negativen und neutralen Bereiche verteilt wird. Deshalb muß man, um eine stark ausgeprägte Gleichrichtung zu erreichen, den Kontakt auf einen Bereich mit gleichsinniger und möglichst hoher Wirkung beschränken. Aus diesem Grunde wird die Kontaktfläche überhaupt klein gemacht, undThe closer investigation of the unipolar capability carried out by the inventor especially the molybdenum luster has shown that with points of positive rectifying effect often places of negative effect in the same face of the crystal are close to each other. (i.e. the rectified current is opposite in the second case Direction as in the first case). Between the small areas within which the rectifying effect of one or the other type is very well developed, there are other areas within which it is located weak or nonexistent (neutral areas). Becomes such a whole crystal face or a large part thereof brought into contact with a metallic conductor and alternating current is sent through the surface of contact, there is no rectification there of the current because it goes through the positive and neutral areas in one direction and in the other Direction is distributed to the negative and neutral areas. Therefore one has to, in order to To achieve a strong rectification, make contact with an area limit the same direction and the highest possible effect. For this reason, the Contact area made small at all, and
Claims (3)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE318010T |
Publications (1)
Publication Number | Publication Date |
---|---|
DE318010C true DE318010C (en) | 1900-01-01 |
Family
ID=6150924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT318010D Expired DE318010C (en) |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE318010C (en) |
-
0
- DE DENDAT318010D patent/DE318010C/de not_active Expired
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