DE3175990D1 - Load-lock vacuum chamber for etching silicon wafers - Google Patents

Load-lock vacuum chamber for etching silicon wafers

Info

Publication number
DE3175990D1
DE3175990D1 DE8181108149T DE3175990T DE3175990D1 DE 3175990 D1 DE3175990 D1 DE 3175990D1 DE 8181108149 T DE8181108149 T DE 8181108149T DE 3175990 T DE3175990 T DE 3175990T DE 3175990 D1 DE3175990 D1 DE 3175990D1
Authority
DE
Germany
Prior art keywords
load
vacuum chamber
silicon wafers
etching silicon
lock vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181108149T
Other languages
English (en)
Inventor
Wayne E Kohman
Joseph E Maleri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applera Corp
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Application granted granted Critical
Publication of DE3175990D1 publication Critical patent/DE3175990D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
DE8181108149T 1980-12-22 1981-10-09 Load-lock vacuum chamber for etching silicon wafers Expired DE3175990D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/219,060 US4341582A (en) 1980-12-22 1980-12-22 Load-lock vacuum chamber

Publications (1)

Publication Number Publication Date
DE3175990D1 true DE3175990D1 (en) 1987-04-16

Family

ID=22817684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181108149T Expired DE3175990D1 (en) 1980-12-22 1981-10-09 Load-lock vacuum chamber for etching silicon wafers

Country Status (5)

Country Link
US (1) US4341582A (de)
EP (1) EP0060917B1 (de)
JP (1) JPS57128928A (de)
CA (1) CA1171551A (de)
DE (1) DE3175990D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484809B1 (en) * 1977-12-05 1995-04-18 Plasma Physics Corp Glow discharge method and apparatus and photoreceptor devices made therewith
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4381965A (en) * 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
NL8300220A (nl) * 1983-01-21 1984-08-16 Philips Nv Inrichting voor het stralingslithografisch behandelen van een dun substraat.
JPH0666298B2 (ja) * 1983-02-03 1994-08-24 日電アネルバ株式会社 ドライエッチング装置
US4584045A (en) * 1984-02-21 1986-04-22 Plasma-Therm, Inc. Apparatus for conveying a semiconductor wafer
US4547247A (en) * 1984-03-09 1985-10-15 Tegal Corporation Plasma reactor chuck assembly
US4657617A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Anodized aluminum substrate for plasma etch reactor
US4657618A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Powered load lock electrode/substrate assembly including robot arm, optimized for plasma process uniformity and rate
US4654106A (en) * 1984-10-22 1987-03-31 Texas Instruments Incorporated Automated plasma reactor
US4661196A (en) * 1984-10-22 1987-04-28 Texas Instruments Incorporated Plasma etch movable substrate
US4657621A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Low particulate vacuum chamber input/output valve
US4657620A (en) * 1984-10-22 1987-04-14 Texas Instruments Incorporated Automated single slice powered load lock plasma reactor
US4659413A (en) * 1984-10-24 1987-04-21 Texas Instruments Incorporated Automated single slice cassette load lock plasma reactor
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4915917A (en) * 1987-02-19 1990-04-10 The Johns Hopkins University Glow discharge unit
JP2501444B2 (ja) * 1987-03-19 1996-05-29 東京エレクトロン株式会社 アツシング装置
US4861563A (en) * 1987-05-14 1989-08-29 Spectrum Cvd, Inc. Vacuum load lock
US4923584A (en) * 1988-10-31 1990-05-08 Eaton Corporation Sealing apparatus for a vacuum processing system
DE69033452T2 (de) * 1989-09-08 2000-06-29 Tokyo Electron Ltd Vorrichtung und Verfahren zum Behandeln von Substraten
US5227000A (en) * 1990-04-09 1993-07-13 Nippon Scientific Co., Ltd. Plasma etching apparatus with accurate temperature and voltage level control on device under test
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
US6672819B1 (en) 1995-07-19 2004-01-06 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
DE19654975C2 (de) * 1995-07-28 2002-07-25 Matsushita Electric Ind Co Ltd Gerät und Verfahren zur Oberflächenbehandlung
DE19629094C2 (de) * 1995-07-28 2000-07-27 Matsushita Electric Ind Co Ltd Gerät und Verfahren zur Drahtkontaktierung unter Verwendung des Oberflächenbehandlungsgerätes
US6528435B1 (en) * 2000-08-25 2003-03-04 Wafermasters, Inc. Plasma processing
US6609877B1 (en) 2000-10-04 2003-08-26 The Boc Group, Inc. Vacuum chamber load lock structure and article transport mechanism
TW511215B (en) * 2001-10-15 2002-11-21 Macronix Int Co Ltd Inspection method for dynamic particle contaminant state of the etching chamber
US6719517B2 (en) * 2001-12-04 2004-04-13 Brooks Automation Substrate processing apparatus with independently configurable integral load locks
US6962644B2 (en) * 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
TW201330086A (zh) * 2012-01-05 2013-07-16 Duan-Ren Yu 蝕刻裝置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291650A (en) * 1976-01-29 1977-08-02 Toshiba Corp Continuous gas plasma etching apparatus
US4208159A (en) * 1977-07-18 1980-06-17 Tokyo Ohka Kogyo Kabushiki Kaisha Apparatus for the treatment of a wafer by plasma reaction
JPS5421175A (en) * 1977-07-18 1979-02-17 Tokyo Ouka Kougiyou Kk Improvement of plasma reaction processor
JPS5487477A (en) * 1977-12-23 1979-07-11 Kokusai Electric Co Ltd Device for etching and stripping semiconductor wafer
JPS5588335A (en) * 1978-12-07 1980-07-04 Kokusai Electric Co Ltd Automatic conveying mechanism for plasma etching/ stripping device
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus

Also Published As

Publication number Publication date
EP0060917A2 (de) 1982-09-29
EP0060917B1 (de) 1987-03-11
CA1171551A (en) 1984-07-24
EP0060917A3 (en) 1983-04-06
JPS57128928A (en) 1982-08-10
US4341582A (en) 1982-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee