DE3175075D1 - Control of a signal voltage for a semiconductor device - Google Patents

Control of a signal voltage for a semiconductor device

Info

Publication number
DE3175075D1
DE3175075D1 DE8181305676T DE3175075T DE3175075D1 DE 3175075 D1 DE3175075 D1 DE 3175075D1 DE 8181305676 T DE8181305676 T DE 8181305676T DE 3175075 T DE3175075 T DE 3175075T DE 3175075 D1 DE3175075 D1 DE 3175075D1
Authority
DE
Germany
Prior art keywords
control
semiconductor device
signal voltage
voltage
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181305676T
Other languages
English (en)
Inventor
Shigeki Nozaki
Katsuhiko Kabashima
Yoshihiro Takemae
Seiji Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3175075D1 publication Critical patent/DE3175075D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
DE8181305676T 1980-12-03 1981-12-02 Control of a signal voltage for a semiconductor device Expired DE3175075D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170748A JPS5846178B2 (ja) 1980-12-03 1980-12-03 半導体装置

Publications (1)

Publication Number Publication Date
DE3175075D1 true DE3175075D1 (en) 1986-09-11

Family

ID=15910651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181305676T Expired DE3175075D1 (en) 1980-12-03 1981-12-02 Control of a signal voltage for a semiconductor device

Country Status (5)

Country Link
US (1) US4482825A (de)
EP (1) EP0055038B1 (de)
JP (1) JPS5846178B2 (de)
DE (1) DE3175075D1 (de)
IE (1) IE52954B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201591A (ja) * 1984-03-26 1985-10-12 Hitachi Ltd 半導体集積回路装置
DE3706251A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
EP0292895B1 (de) * 1987-05-21 1993-09-22 Kabushiki Kaisha Toshiba Ladungsübertragungsanordnung
JPH0192992A (ja) * 1987-10-02 1989-04-12 Matsushita Electric Ind Co Ltd センスアンプ回路
JP2621612B2 (ja) * 1990-08-11 1997-06-18 日本電気株式会社 半導体集積回路
US5258662A (en) * 1992-04-06 1993-11-02 Linear Technology Corp. Micropower gate charge pump for power MOSFETS

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646369A (en) * 1970-08-28 1972-02-29 North American Rockwell Multiphase field effect transistor dc driver
JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
US4250414A (en) * 1978-07-31 1981-02-10 Bell Telephone Laboratories, Incorporated Voltage generator circuitry
US4369379A (en) * 1980-03-14 1983-01-18 Texas Instruments Incorporated CMOS Frequency divider circuit having invalid signal override
US4398106A (en) * 1980-12-19 1983-08-09 International Business Machines Corporation On-chip Delta-I noise clamping circuit

Also Published As

Publication number Publication date
EP0055038A3 (en) 1983-05-11
JPS57103330A (en) 1982-06-26
IE812836L (en) 1982-06-03
EP0055038A2 (de) 1982-06-30
US4482825A (en) 1984-11-13
IE52954B1 (en) 1988-04-27
JPS5846178B2 (ja) 1983-10-14
EP0055038B1 (de) 1986-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee