DE3162083D1 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- DE3162083D1 DE3162083D1 DE8181102341T DE3162083T DE3162083D1 DE 3162083 D1 DE3162083 D1 DE 3162083D1 DE 8181102341 T DE8181102341 T DE 8181102341T DE 3162083 T DE3162083 T DE 3162083T DE 3162083 D1 DE3162083 D1 DE 3162083D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4020980A JPS56137668A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
JP55178941A JPS57103357A (en) | 1980-12-19 | 1980-12-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3162083D1 true DE3162083D1 (en) | 1984-03-08 |
Family
ID=26379648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181102341T Expired DE3162083D1 (en) | 1980-03-31 | 1981-03-27 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4476479A (de) |
EP (1) | EP0037103B1 (de) |
DE (1) | DE3162083D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
GB2215123B (en) * | 1988-02-16 | 1990-10-24 | Stc Plc | Improvement in integrated circuits |
JPH01147854A (ja) * | 1987-12-04 | 1989-06-09 | Nissan Motor Co Ltd | 半導体装置 |
JP2737334B2 (ja) * | 1989-01-23 | 1998-04-08 | モトローラ・インコーポレーテッド | 電力集積回路用基板電力供給接点 |
US5293057A (en) * | 1992-08-14 | 1994-03-08 | Micron Technology, Inc. | Electrostatic discharge protection circuit for semiconductor device |
JP2002208644A (ja) * | 2001-01-11 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置 |
US6833590B2 (en) * | 2001-01-11 | 2004-12-21 | Renesas Technology Corp. | Semiconductor device |
US6624660B2 (en) * | 2001-12-06 | 2003-09-23 | Micron Technology, Inc. | CMOS output driver for semiconductor device and related method for improving latch-up immunity in a CMOS output driver |
US9379109B1 (en) * | 2012-04-04 | 2016-06-28 | Xilinx, Inc. | Integrated circuit having improved radiation immunity |
US9236353B2 (en) | 2012-11-27 | 2016-01-12 | Xilinx, Inc. | Integrated circuit having improved radiation immunity |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3447046A (en) * | 1967-05-31 | 1969-05-27 | Westinghouse Electric Corp | Integrated complementary mos type transistor structure and method of making same |
DE2055662C3 (de) * | 1970-11-12 | 1979-10-18 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Monolithisch integrierte Festkörperschaltung |
US3758831A (en) * | 1971-06-07 | 1973-09-11 | Motorola Inc | Transistor with improved breakdown mode |
NL161305C (nl) * | 1971-11-20 | 1980-01-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting. |
JPS5214383A (en) * | 1975-07-24 | 1977-02-03 | Fujitsu Ltd | Mis-type semiconductor device |
US4225877A (en) * | 1978-09-05 | 1980-09-30 | Sprague Electric Company | Integrated circuit with C-Mos logic, and a bipolar driver with polysilicon resistors |
JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
-
1981
- 1981-03-24 US US06/247,156 patent/US4476479A/en not_active Expired - Lifetime
- 1981-03-27 DE DE8181102341T patent/DE3162083D1/de not_active Expired
- 1981-03-27 EP EP81102341A patent/EP0037103B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0037103B1 (de) | 1984-02-01 |
US4476479A (en) | 1984-10-09 |
EP0037103A1 (de) | 1981-10-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |