DE3161720D1 - Sense amplifying system and memory using this system - Google Patents
Sense amplifying system and memory using this systemInfo
- Publication number
- DE3161720D1 DE3161720D1 DE8181100815T DE3161720T DE3161720D1 DE 3161720 D1 DE3161720 D1 DE 3161720D1 DE 8181100815 T DE8181100815 T DE 8181100815T DE 3161720 T DE3161720 T DE 3161720T DE 3161720 D1 DE3161720 D1 DE 3161720D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- sense amplifying
- sense
- amplifying system
- amplifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/134,259 US4287576A (en) | 1980-03-26 | 1980-03-26 | Sense amplifying system for memories with small cells |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3161720D1 true DE3161720D1 (en) | 1984-02-02 |
Family
ID=22462513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181100815T Expired DE3161720D1 (en) | 1980-03-26 | 1981-02-05 | Sense amplifying system and memory using this system |
Country Status (4)
Country | Link |
---|---|
US (1) | US4287576A (de) |
EP (1) | EP0036932B1 (de) |
JP (1) | JPS594788B2 (de) |
DE (1) | DE3161720D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208691A (en) * | 1981-06-15 | 1982-12-21 | Mitsubishi Electric Corp | Semiconductor memory |
US4445201A (en) * | 1981-11-30 | 1984-04-24 | International Business Machines Corporation | Simple amplifying system for a dense memory array |
JPS58147884A (ja) * | 1982-02-26 | 1983-09-02 | Toshiba Corp | ダイナミック型半導体記憶装置 |
JPS6150284A (ja) * | 1984-08-17 | 1986-03-12 | Mitsubishi Electric Corp | シエアドセンスアンプ回路の駆動方法 |
KR900005667B1 (ko) * | 1984-11-20 | 1990-08-03 | 후지쓰 가부시끼가이샤 | 반도체 기억장치 |
US4791616A (en) * | 1985-07-10 | 1988-12-13 | Fujitsu Limited | Semiconductor memory device |
US4807195A (en) * | 1987-05-18 | 1989-02-21 | International Business Machines Corporation | Apparatus and method for providing a dual sense amplifier with divided bit line isolation |
US4829476A (en) * | 1987-07-28 | 1989-05-09 | Honeywell Inc. | Differential magnetoresistive memory sensing |
KR910009444B1 (ko) * | 1988-12-20 | 1991-11-16 | 삼성전자 주식회사 | 반도체 메모리 장치 |
EP0479170B1 (de) * | 1990-09-29 | 1996-08-21 | Nec Corporation | Halbleiterspeicheranordnung mit einer rauscharmen Abfühlstruktur |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US3811076A (en) * | 1973-01-02 | 1974-05-14 | Ibm | Field effect transistor integrated circuit and memory |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
US3909808A (en) * | 1974-12-23 | 1975-09-30 | Ibm | Minimum pitch mosfet decoder circuit configuration |
JPS5539073B2 (de) * | 1974-12-25 | 1980-10-08 | ||
JPS51113545A (en) * | 1975-03-31 | 1976-10-06 | Hitachi Ltd | Memory |
US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
US4025907A (en) * | 1975-07-10 | 1977-05-24 | Burroughs Corporation | Interlaced memory matrix array having single transistor cells |
DE2557165C3 (de) * | 1975-12-18 | 1979-01-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Decoderschaltung und ihre Anordnung zur Integrierung auf einem Halbleiterbaustein |
US4061999A (en) * | 1975-12-29 | 1977-12-06 | Mostek Corporation | Dynamic random access memory system |
US4156938A (en) * | 1975-12-29 | 1979-05-29 | Mostek Corporation | MOSFET Memory chip with single decoder and bi-level interconnect lines |
US4040017A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Injected charge capacitor memory |
US4080590A (en) * | 1976-03-31 | 1978-03-21 | International Business Machines Corporation | Capacitor storage memory |
US4045783A (en) * | 1976-04-12 | 1977-08-30 | Standard Microsystems Corporation | Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry |
DE2647394C2 (de) * | 1976-10-20 | 1978-11-16 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MOS-Halbleiterspeicherbaustein |
JPS53144232A (en) * | 1977-04-28 | 1978-12-15 | Toshiba Corp | Sensor circuit for multi-value signal charge transfer device |
DE2746336A1 (de) * | 1977-10-14 | 1979-04-19 | Siemens Ag | Dynamischer halbleiterspeicher mit einer matrix aus ein-transistor-speicherzellen |
US4160275A (en) * | 1978-04-03 | 1979-07-03 | International Business Machines Corporation | Accessing arrangement for memories with small cells |
DE2919166C2 (de) * | 1978-05-12 | 1986-01-02 | Nippon Electric Co., Ltd., Tokio/Tokyo | Speichervorrichtung |
-
1980
- 1980-03-26 US US06/134,259 patent/US4287576A/en not_active Expired - Lifetime
-
1981
- 1981-02-05 EP EP81100815A patent/EP0036932B1/de not_active Expired
- 1981-02-05 DE DE8181100815T patent/DE3161720D1/de not_active Expired
- 1981-03-06 JP JP56031446A patent/JPS594788B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS594788B2 (ja) | 1984-01-31 |
EP0036932B1 (de) | 1983-12-28 |
US4287576A (en) | 1981-09-01 |
EP0036932A3 (en) | 1981-10-21 |
EP0036932A2 (de) | 1981-10-07 |
JPS56140589A (en) | 1981-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |