DE3161615D1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
DE3161615D1
DE3161615D1 DE8181301084T DE3161615T DE3161615D1 DE 3161615 D1 DE3161615 D1 DE 3161615D1 DE 8181301084 T DE8181301084 T DE 8181301084T DE 3161615 T DE3161615 T DE 3161615T DE 3161615 D1 DE3161615 D1 DE 3161615D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181301084T
Other languages
German (de)
English (en)
Inventor
Yoshitaka Sugawara
Tatsuya Kamei
Tetsuma Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd Nippon Telegraph And Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3161615D1 publication Critical patent/DE3161615D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
DE8181301084T 1980-03-19 1981-03-16 Semiconductor device Expired DE3161615D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3406680A JPS56131954A (en) 1980-03-19 1980-03-19 Semiconductor device

Publications (1)

Publication Number Publication Date
DE3161615D1 true DE3161615D1 (en) 1984-01-19

Family

ID=12403880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181301084T Expired DE3161615D1 (en) 1980-03-19 1981-03-16 Semiconductor device

Country Status (5)

Country Link
US (1) US4419685A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0036319B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS56131954A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1145062A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3161615D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4544940A (en) * 1983-01-14 1985-10-01 General Motors Corporation Method for more uniformly spacing features in a lateral bipolar transistor
US4586243A (en) * 1983-01-14 1986-05-06 General Motors Corporation Method for more uniformly spacing features in a semiconductor monolithic integrated circuit
GB2143082B (en) * 1983-07-06 1987-06-17 Standard Telephones Cables Ltd Bipolar lateral transistor
GB2148589B (en) * 1983-10-18 1987-04-23 Standard Telephones Cables Ltd Improvements in intergrated circuits
US4510676A (en) * 1983-12-06 1985-04-16 International Business Machines, Corporation Method of fabricating a lateral PNP transistor
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
JPH0812865B2 (ja) * 1989-06-06 1996-02-07 株式会社東芝 バイポーラトランジスタとその製造方法
FR2649830B1 (fr) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics Structure de circuit integre cmos protege contre les decharges electrostatiques
FR2650122B1 (fr) * 1989-07-21 1991-11-08 Motorola Semiconducteurs Dispositif semi-conducteur a haute tension et son procede de fabrication
JP2507632B2 (ja) * 1989-10-18 1996-06-12 株式会社日立製作所 半導体装置
US5994739A (en) * 1990-07-02 1999-11-30 Kabushiki Kaisha Toshiba Integrated circuit device
DE59009155D1 (de) * 1990-11-12 1995-06-29 Siemens Ag Halbleiterbauelement für hohe Sperrspannung.
JP2741434B2 (ja) * 1990-11-26 1998-04-15 太平洋精工株式会社 ブロアモータ用抵抗器
US5646055A (en) * 1996-05-01 1997-07-08 Motorola, Inc. Method for making bipolar transistor
CN107946356B (zh) * 2017-03-02 2024-04-09 重庆中科渝芯电子有限公司 一种横向高压功率双极结型晶体管及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
JPS516509B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-07-02 1976-02-28
JPS5218073B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-15 1977-05-19
JPS4979480A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-12-06 1974-07-31
JPS5522946B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-02-07 1980-06-19
US3919005A (en) * 1973-05-07 1975-11-11 Fairchild Camera Instr Co Method for fabricating double-diffused, lateral transistor
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor
JPS5359376U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-10-20 1978-05-20
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping

Also Published As

Publication number Publication date
CA1145062A (en) 1983-04-19
EP0036319B1 (en) 1983-12-14
JPS643347B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-01-20
EP0036319A1 (en) 1981-09-23
US4419685A (en) 1983-12-06
JPS56131954A (en) 1981-10-15

Similar Documents

Publication Publication Date Title
JPS56142667A (en) Semiconductor device
JPS56126961A (en) Semiconductor device
JPS5778168A (en) Semiconductor device
JPS56164577A (en) Semiconductor device
JPS56105662A (en) Semiconductor device
DE3163340D1 (en) Semiconductor device
JPS56114370A (en) Semiconductor device
GB8403595D0 (en) Semiconductor device
JPS56126966A (en) Semiconductor device
EP0055558A3 (en) Semiconductor device
JPS56138956A (en) Semiconductor device
JPS56142668A (en) Semiconductor device
JPS56155567A (en) Semiconductor device
GB2149575B (en) Semiconductor device
DE3161615D1 (en) Semiconductor device
DE3166929D1 (en) Semiconductor device
JPS56101695A (en) Semiconductor device
JPS5773981A (en) Semiconductor device
DE3175373D1 (en) Semiconductor device
JPS57106075A (en) Semiconductor device
EP0048358A3 (en) Semiconductor device
DE3162083D1 (en) Semiconductor device
DE3174500D1 (en) Semiconductor device
DE3174789D1 (en) Semiconductor device
DE3175783D1 (en) Semiconductor device

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HITACHI, LTD. NIPPON TELEGRAPH AND TELEPHONE CORP.