DE3100670C2 - - Google Patents
Info
- Publication number
- DE3100670C2 DE3100670C2 DE19813100670 DE3100670A DE3100670C2 DE 3100670 C2 DE3100670 C2 DE 3100670C2 DE 19813100670 DE19813100670 DE 19813100670 DE 3100670 A DE3100670 A DE 3100670A DE 3100670 C2 DE3100670 C2 DE 3100670C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366780A JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3100670A1 DE3100670A1 (de) | 1981-11-19 |
DE3100670C2 true DE3100670C2 (no) | 1987-02-26 |
Family
ID=11563780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19813100670 Granted DE3100670A1 (de) | 1980-01-18 | 1981-01-12 | "metall-oxid-halbleiter-vorrichtung" |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS56101777A (no) |
DE (1) | DE3100670A1 (no) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2222721B (en) * | 1988-08-23 | 1993-07-28 | Nobuo Mikoshiba | Cooling semiconductor devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1812455C3 (de) * | 1968-12-03 | 1980-03-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer aus einem Metalloxyd bestehenden isolierenden Schutzschicht an der Oberfläche eines Halbleiterkristalls |
-
1980
- 1980-01-18 JP JP366780A patent/JPS56101777A/ja active Granted
-
1981
- 1981-01-12 DE DE19813100670 patent/DE3100670A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3100670A1 (de) | 1981-11-19 |
JPS56101777A (en) | 1981-08-14 |
JPS6226594B2 (no) | 1987-06-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |