DE3100670C2 - - Google Patents

Info

Publication number
DE3100670C2
DE3100670C2 DE19813100670 DE3100670A DE3100670C2 DE 3100670 C2 DE3100670 C2 DE 3100670C2 DE 19813100670 DE19813100670 DE 19813100670 DE 3100670 A DE3100670 A DE 3100670A DE 3100670 C2 DE3100670 C2 DE 3100670C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19813100670
Other languages
German (de)
Other versions
DE3100670A1 (de
Inventor
Kiyoshi Morimoto
Toshinori Nagaokakyo Kyoto Jp Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Publication of DE3100670A1 publication Critical patent/DE3100670A1/de
Application granted granted Critical
Publication of DE3100670C2 publication Critical patent/DE3100670C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
DE19813100670 1980-01-18 1981-01-12 "metall-oxid-halbleiter-vorrichtung" Granted DE3100670A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP366780A JPS56101777A (en) 1980-01-18 1980-01-18 Mos type semiconductor device

Publications (2)

Publication Number Publication Date
DE3100670A1 DE3100670A1 (de) 1981-11-19
DE3100670C2 true DE3100670C2 (el) 1987-02-26

Family

ID=11563780

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813100670 Granted DE3100670A1 (de) 1980-01-18 1981-01-12 "metall-oxid-halbleiter-vorrichtung"

Country Status (2)

Country Link
JP (1) JPS56101777A (el)
DE (1) DE3100670A1 (el)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222721B (en) * 1988-08-23 1993-07-28 Nobuo Mikoshiba Cooling semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1812455C3 (de) * 1968-12-03 1980-03-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer aus einem Metalloxyd bestehenden isolierenden Schutzschicht an der Oberfläche eines Halbleiterkristalls

Also Published As

Publication number Publication date
DE3100670A1 (de) 1981-11-19
JPS56101777A (en) 1981-08-14
JPS6226594B2 (el) 1987-06-09

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee