DE3071309D1 - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
DE3071309D1
DE3071309D1 DE8080303019T DE3071309T DE3071309D1 DE 3071309 D1 DE3071309 D1 DE 3071309D1 DE 8080303019 T DE8080303019 T DE 8080303019T DE 3071309 T DE3071309 T DE 3071309T DE 3071309 D1 DE3071309 D1 DE 3071309D1
Authority
DE
Germany
Prior art keywords
emitting device
semiconductor light
semiconductor
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080303019T
Other languages
German (de)
English (en)
Inventor
Osamu Hasegawa
Kenji Yano
Koichi Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3071309D1 publication Critical patent/DE3071309D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G02B6/4203—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
DE8080303019T 1979-08-31 1980-08-29 Semiconductor light-emitting device Expired DE3071309D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11115979A JPS5642388A (en) 1979-08-31 1979-08-31 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
DE3071309D1 true DE3071309D1 (en) 1986-02-06

Family

ID=14553967

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080303019T Expired DE3071309D1 (en) 1979-08-31 1980-08-29 Semiconductor light-emitting device

Country Status (4)

Country Link
US (1) US4354199A (enExample)
EP (1) EP0025324B1 (enExample)
JP (1) JPS5642388A (enExample)
DE (1) DE3071309D1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579326B2 (ja) * 1987-11-13 1997-02-05 三菱化学株式会社 エピタキシャル・ウエハ及び発光ダイオード
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JPH0327577A (ja) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 発光ダイオ―ドアレイ
JP2003168822A (ja) * 2001-11-30 2003-06-13 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP4293178B2 (ja) * 2005-11-09 2009-07-08 パナソニック電工株式会社 立体回路基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790853A (en) * 1973-01-19 1974-02-05 Rca Corp Semiconductor light ray deflector
US4025157A (en) * 1975-06-26 1977-05-24 The United States Of America As Represented By The Secretary Of The Navy Gradient index miniature coupling lens
US4117504A (en) * 1976-08-06 1978-09-26 Vadim Nikolaevich Maslov Heterogeneous semiconductor structure with composition gradient and method for producing same
FR2404307A1 (fr) * 1977-09-27 1979-04-20 Centre Nat Etd Spatiales Cellules solaires a double heterojonction et dispositif de montage
US4294510A (en) * 1979-12-10 1981-10-13 International Business Machines Corporation Semiconductor fiber optical detection

Also Published As

Publication number Publication date
EP0025324B1 (en) 1985-12-27
EP0025324A2 (en) 1981-03-18
US4354199A (en) 1982-10-12
JPS5642388A (en) 1981-04-20
EP0025324A3 (en) 1983-02-02
JPS6138873B2 (enExample) 1986-09-01

Similar Documents

Publication Publication Date Title
JPS55118651A (en) Semiconductor device
JPS55133562A (en) Semiconductor device
JPS5637680A (en) Semiconductor device
GB2013029B (en) Semiconductor device
DE3066330D1 (en) An optoelectronic semiconductor device
JPS55130573A (en) Electroluminescence device
EP0023782A3 (en) Semiconductor device
GB2013028B (en) Semiconductor device
JPS55140272A (en) Semiconductor device
JPS567466A (en) Selffalignment semiconductor device
JPS567450A (en) Semiconductor device
JPS567465A (en) Semiconductor device
GB2019643B (en) Electroluminescent semiconductor device
DE3071218D1 (en) Integrated semiconductor devices
GB1540004A (en) Semiconductor light-emitting device
DE3067917D1 (en) Constructional arrangement for semiconductor devices
JPS5687395A (en) Semiconductor device
DE3071242D1 (en) Semiconductor device
JPS5666049A (en) Semiconductor device
JPS55162248A (en) Semiconductor device
DE3273870D1 (en) Semiconductor light-emitting device
GB2018511B (en) Semiconductor device
GB2061001B (en) Semiconductor device
GB2043343B (en) Semiconductor device
JPS5676581A (en) Semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee