DE3070692D1 - Controlling the properties of native films using selective growth chemistry - Google Patents

Controlling the properties of native films using selective growth chemistry

Info

Publication number
DE3070692D1
DE3070692D1 DE8080900359T DE3070692T DE3070692D1 DE 3070692 D1 DE3070692 D1 DE 3070692D1 DE 8080900359 T DE8080900359 T DE 8080900359T DE 3070692 T DE3070692 T DE 3070692T DE 3070692 D1 DE3070692 D1 DE 3070692D1
Authority
DE
Germany
Prior art keywords
properties
controlling
selective growth
growth chemistry
native films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080900359T
Other languages
German (de)
English (en)
Inventor
Robert Pang Heng Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3070692D1 publication Critical patent/DE3070692D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/904—Thermal treatments, e.g. annealing or sintering of Group III-V semiconductors
DE8080900359T 1979-02-14 1980-01-31 Controlling the properties of native films using selective growth chemistry Expired DE3070692D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/012,192 US4246296A (en) 1979-02-14 1979-02-14 Controlling the properties of native films using selective growth chemistry
PCT/US1980/000092 WO1980001738A1 (en) 1979-02-14 1980-01-31 Controlling the properties of native films using selective growth chemistry

Publications (1)

Publication Number Publication Date
DE3070692D1 true DE3070692D1 (en) 1985-07-04

Family

ID=21753790

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080900359T Expired DE3070692D1 (en) 1979-02-14 1980-01-31 Controlling the properties of native films using selective growth chemistry

Country Status (5)

Country Link
US (1) US4246296A (enExample)
EP (1) EP0023911B1 (enExample)
JP (1) JPS6236384B2 (enExample)
DE (1) DE3070692D1 (enExample)
WO (1) WO1980001738A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662328A (en) * 1979-10-26 1981-05-28 Agency Of Ind Science & Technol Manufacturing of insulation membrane and insulation membrane-semiconductor interface
US4421785A (en) * 1980-08-18 1983-12-20 Sperry Corporation Superconductive tunnel junction device and method of manufacture
US4368550A (en) * 1981-04-10 1983-01-18 Stevens Gunther A Method and apparatus for winterizing a swimming pool
US4544418A (en) * 1984-04-16 1985-10-01 Gibbons James F Process for high temperature surface reactions in semiconductor material
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
DE4017870A1 (de) * 1990-06-02 1991-12-05 Standard Elektrik Lorenz Ag Verfahren zur herstellung und passivierung von halbleiterbauelementen
US5120680A (en) * 1990-07-19 1992-06-09 At&T Bell Laboratories Method for depositing dielectric layers
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
JPH0883902A (ja) * 1994-09-09 1996-03-26 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
US5563105A (en) * 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH09139494A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
JP3489334B2 (ja) * 1996-05-27 2004-01-19 ソニー株式会社 半導体装置の酸化膜形成方法および酸化膜形成装置
US5872031A (en) * 1996-11-27 1999-02-16 The Regents Of The University Of California Enhancement-depletion logic based on gaas mosfets
US6472695B1 (en) 1999-06-18 2002-10-29 The Regents Of The University Of California Increased lateral oxidation rate of aluminum indium arsenide

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB991263A (en) * 1963-02-15 1965-05-05 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3692571A (en) * 1970-11-12 1972-09-19 Northern Electric Co Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US3849276A (en) * 1971-03-19 1974-11-19 Ibm Process for forming reactive layers whose thickness is independent of time
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition
US4062747A (en) * 1976-06-15 1977-12-13 Bell Telephone Laboratories, Incorporated Native growth of semiconductor oxide layers
US4170666A (en) * 1977-05-11 1979-10-09 Rockwell International Corporation Method for reducing surface recombination velocities in III-V compound semiconductors
US4172906A (en) * 1977-05-11 1979-10-30 Rockwell International Corporation Method for passivating III-V compound semiconductors
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching

Also Published As

Publication number Publication date
EP0023911B1 (en) 1985-05-29
EP0023911A4 (en) 1983-03-15
JPS55501202A (enExample) 1980-12-25
EP0023911A1 (en) 1981-02-18
JPS6236384B2 (enExample) 1987-08-06
US4246296A (en) 1981-01-20
WO1980001738A1 (en) 1980-08-21

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Legal Events

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8328 Change in the person/name/address of the agent

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