DE3065468D1 - Process for purifying group iii elements and epitaxial growth of semiconductor compounds - Google Patents

Process for purifying group iii elements and epitaxial growth of semiconductor compounds

Info

Publication number
DE3065468D1
DE3065468D1 DE8080303079T DE3065468T DE3065468D1 DE 3065468 D1 DE3065468 D1 DE 3065468D1 DE 8080303079 T DE8080303079 T DE 8080303079T DE 3065468 T DE3065468 T DE 3065468T DE 3065468 D1 DE3065468 D1 DE 3065468D1
Authority
DE
Germany
Prior art keywords
group iii
epitaxial growth
iii elements
semiconductor compounds
purifying group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080303079T
Other languages
English (en)
Inventor
Marc Marian Faktor
John Haigh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Application granted granted Critical
Publication of DE3065468D1 publication Critical patent/DE3065468D1/de
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B58/00Obtaining gallium or indium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8080303079T 1979-09-10 1980-09-03 Process for purifying group iii elements and epitaxial growth of semiconductor compounds Expired DE3065468D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7931278 1979-09-10
GB7944418 1979-12-28

Publications (1)

Publication Number Publication Date
DE3065468D1 true DE3065468D1 (en) 1983-12-08

Family

ID=26272825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080303079T Expired DE3065468D1 (en) 1979-09-10 1980-09-03 Process for purifying group iii elements and epitaxial growth of semiconductor compounds

Country Status (4)

Country Link
US (1) US4339302A (de)
EP (1) EP0025668B1 (de)
CA (1) CA1159652A (de)
DE (1) DE3065468D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623074B2 (ja) * 1986-04-18 1994-03-30 日本板硝子株式会社 カルコゲナイドガラス用原料の精製方法
JPH01233140A (ja) * 1988-03-14 1989-09-18 Nissan Motor Co Ltd 車両用窓ガラスの解氷装置
DE3842863A1 (de) * 1988-12-20 1990-06-21 Fraunhofer Ges Forschung Feldeffekttransistor und verfahren zum herstellen eines feldeffekttransistors
US5972073A (en) * 1997-10-02 1999-10-26 The University Of Dayton Recovery of the components of group III-V material aqueous wastes
US6126719A (en) * 1998-01-21 2000-10-03 The University Of Dayton Recovery of group III element component from group III-V waste materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2477799A (en) * 1947-06-28 1949-08-02 American Smelting Refining Process for separating indium from contaminants
US2898278A (en) * 1956-11-21 1959-08-04 Bbc Brown Boveri & Cie Process for the production of highpurity gallium
US2901342A (en) * 1956-11-29 1959-08-25 Du Pont Purification of indium
US3093475A (en) * 1960-08-23 1963-06-11 Indium Corp America Method for purifying metallic indium

Also Published As

Publication number Publication date
EP0025668B1 (de) 1983-11-02
EP0025668A1 (de) 1981-03-25
US4339302A (en) 1982-07-13
CA1159652A (en) 1984-01-03

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: BRITISH TELECOMMUNICATIONS P.L.C., LONDON, GB

8339 Ceased/non-payment of the annual fee