DE3065468D1 - Process for purifying group iii elements and epitaxial growth of semiconductor compounds - Google Patents
Process for purifying group iii elements and epitaxial growth of semiconductor compoundsInfo
- Publication number
- DE3065468D1 DE3065468D1 DE8080303079T DE3065468T DE3065468D1 DE 3065468 D1 DE3065468 D1 DE 3065468D1 DE 8080303079 T DE8080303079 T DE 8080303079T DE 3065468 T DE3065468 T DE 3065468T DE 3065468 D1 DE3065468 D1 DE 3065468D1
- Authority
- DE
- Germany
- Prior art keywords
- group iii
- epitaxial growth
- iii elements
- semiconductor compounds
- purifying group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B58/00—Obtaining gallium or indium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7931278 | 1979-09-10 | ||
GB7944418 | 1979-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3065468D1 true DE3065468D1 (en) | 1983-12-08 |
Family
ID=26272825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080303079T Expired DE3065468D1 (en) | 1979-09-10 | 1980-09-03 | Process for purifying group iii elements and epitaxial growth of semiconductor compounds |
Country Status (4)
Country | Link |
---|---|
US (1) | US4339302A (de) |
EP (1) | EP0025668B1 (de) |
CA (1) | CA1159652A (de) |
DE (1) | DE3065468D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0623074B2 (ja) * | 1986-04-18 | 1994-03-30 | 日本板硝子株式会社 | カルコゲナイドガラス用原料の精製方法 |
JPH01233140A (ja) * | 1988-03-14 | 1989-09-18 | Nissan Motor Co Ltd | 車両用窓ガラスの解氷装置 |
DE3842863A1 (de) * | 1988-12-20 | 1990-06-21 | Fraunhofer Ges Forschung | Feldeffekttransistor und verfahren zum herstellen eines feldeffekttransistors |
US5972073A (en) * | 1997-10-02 | 1999-10-26 | The University Of Dayton | Recovery of the components of group III-V material aqueous wastes |
US6126719A (en) * | 1998-01-21 | 2000-10-03 | The University Of Dayton | Recovery of group III element component from group III-V waste materials |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2477799A (en) * | 1947-06-28 | 1949-08-02 | American Smelting Refining | Process for separating indium from contaminants |
US2898278A (en) * | 1956-11-21 | 1959-08-04 | Bbc Brown Boveri & Cie | Process for the production of highpurity gallium |
US2901342A (en) * | 1956-11-29 | 1959-08-25 | Du Pont | Purification of indium |
US3093475A (en) * | 1960-08-23 | 1963-06-11 | Indium Corp America | Method for purifying metallic indium |
-
1980
- 1980-09-03 EP EP80303079A patent/EP0025668B1/de not_active Expired
- 1980-09-03 DE DE8080303079T patent/DE3065468D1/de not_active Expired
- 1980-09-05 US US06/184,620 patent/US4339302A/en not_active Expired - Lifetime
- 1980-09-10 CA CA000360380A patent/CA1159652A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0025668B1 (de) | 1983-11-02 |
EP0025668A1 (de) | 1981-03-25 |
US4339302A (en) | 1982-07-13 |
CA1159652A (en) | 1984-01-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: BRITISH TELECOMMUNICATIONS P.L.C., LONDON, GB |
|
8339 | Ceased/non-payment of the annual fee |