DE3062950D1 - Semiconductor integrated circuit device with non-volatile semiconductor memory cells - Google Patents

Semiconductor integrated circuit device with non-volatile semiconductor memory cells

Info

Publication number
DE3062950D1
DE3062950D1 DE8080102894T DE3062950T DE3062950D1 DE 3062950 D1 DE3062950 D1 DE 3062950D1 DE 8080102894 T DE8080102894 T DE 8080102894T DE 3062950 T DE3062950 T DE 3062950T DE 3062950 D1 DE3062950 D1 DE 3062950D1
Authority
DE
Germany
Prior art keywords
integrated circuit
memory cells
circuit device
semiconductor memory
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080102894T
Other languages
English (en)
Inventor
Yuichi Kawasaki
Sumio Tanaka
Hiroshi Iwahashi
Masamichi Asano
Shinichi Maekawa
Masazi Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Application granted granted Critical
Publication of DE3062950D1 publication Critical patent/DE3062950D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
DE8080102894T 1979-05-25 1980-05-23 Semiconductor integrated circuit device with non-volatile semiconductor memory cells Expired DE3062950D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54064009A JPS60777B2 (ja) 1979-05-25 1979-05-25 Ｍｏｓ半導体集積回路

Publications (1)

Publication Number Publication Date
DE3062950D1 true DE3062950D1 (en) 1983-06-09

Family

ID=13245746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080102894T Expired DE3062950D1 (en) 1979-05-25 1980-05-23 Semiconductor integrated circuit device with non-volatile semiconductor memory cells

Country Status (4)

Country Link
US (1) US4453174A (de)
EP (1) EP0019882B1 (de)
JP (1) JPS60777B2 (de)
DE (1) DE3062950D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371411A (en) * 1980-09-01 1994-12-06 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
US4546372A (en) * 1983-04-11 1985-10-08 United Technologies Corporation Phosphorous-nitrogen based glasses for the passivation of III-V semiconductor materials
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US5187558A (en) * 1989-05-08 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Stress reduction structure for a resin sealed semiconductor device
EP3612818B1 (de) 2017-04-21 2022-01-12 Hewlett-Packard Development Company, L.P. Medienbehältersensoren
US11415685B2 (en) 2017-04-21 2022-08-16 Hewlett-Packard Development Company, L.P. Sensors calibration

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514488A1 (de) * 1965-06-29 1969-04-24 Siemens Ag Verfahren zum Herstellen einer Verbundhalbleiteranordnung
US3786318A (en) * 1966-10-14 1974-01-15 Hitachi Ltd Semiconductor device having channel preventing structure
US3696274A (en) * 1970-06-26 1972-10-03 Signetics Corp Air isolated integrated circuit and method
JPS525233B2 (de) * 1972-02-29 1977-02-10
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
JPS5017180A (de) * 1973-06-13 1975-02-22
US3978577A (en) * 1975-06-30 1976-09-07 International Business Machines Corporation Fixed and variable threshold N-channel MNOSFET integration technique
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4247788A (en) * 1978-10-23 1981-01-27 Westinghouse Electric Corp. Charge transfer device with transistor input signal divider
US4278705A (en) * 1979-11-08 1981-07-14 Bell Telephone Laboratories, Incorporated Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide

Also Published As

Publication number Publication date
EP0019882A1 (de) 1980-12-10
EP0019882B1 (de) 1983-05-04
JPS55157253A (en) 1980-12-06
JPS60777B2 (ja) 1985-01-10
US4453174A (en) 1984-06-05

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Free format text: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZEL, W., DIPL.-ING., PAT.-ANW., 8000 MUENCHEN