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Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface

Info

Publication number
DE3023165A1
DE3023165A1 DE19803023165 DE3023165A DE3023165A1 DE 3023165 A1 DE3023165 A1 DE 3023165A1 DE 19803023165 DE19803023165 DE 19803023165 DE 3023165 A DE3023165 A DE 3023165A DE 3023165 A1 DE3023165 A1 DE 3023165A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
film
pref
surface
reflecting
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803023165
Other languages
German (de)
Other versions
DE3023165C2 (en )
Inventor
Helmold Dipl Phys Kausche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Abstract

The thin Si film is located on a reflecting substrate, which consists of an Al film with a matt reflecting surface. The surface of the Al film is pref. roughened; and the Al is pref. located on a carrier, which is made of an insulator or metal, esp. glass; ceramic; Al; steel; Al or steel coated with an insulating film; a metal foil; or a polymer foil. The reflecting Al substrate is pref. 0.5 microns in average thickness, with a surface roughness of ca. 0.5 microns; and this substrate is pref. formed by sputtering at 150 deg. C in argon onto the carrier. High efficiency is obtd., where the highest possible amt. of the incident light is converted into electrical energy.
DE19803023165 1980-06-20 1980-06-20 Expired - Fee Related DE3023165C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19803023165 DE3023165C2 (en) 1980-06-20 1980-06-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803023165 DE3023165C2 (en) 1980-06-20 1980-06-20

Publications (2)

Publication Number Publication Date
DE3023165A1 true true DE3023165A1 (en) 1982-01-07
DE3023165C2 DE3023165C2 (en) 1991-05-29

Family

ID=6105065

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803023165 Expired - Fee Related DE3023165C2 (en) 1980-06-20 1980-06-20

Country Status (1)

Country Link
DE (1) DE3023165C2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc Photovoltaic device comprising means for directing the incident radiation for a total internal reflection
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (en) * 1982-09-27 1984-03-30 Rca Corp Photodetector and method for making
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens Ag Solar cell made of amorphous silicon and process for their manufacture
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
DE3528087A1 (en) * 1984-08-06 1986-02-13 Showa Aluminum Corp Substrate for amorphous silicon solar cells
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
DE3626450A1 (en) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Component of edifices and buildings which acts as a solar cell
DE102009033771A1 (en) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solar reflector for installation on e.g. flat saddle or monopitch roofs of building, has reflector surface reflecting sunlight on photovoltaic panels of photovoltaic systems, where reflector surface is designed as strewing reflector surface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631880A1 (en) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition
DE2812547A1 (en) * 1977-03-28 1978-10-05 Rca Corp photocell
DE2715471A1 (en) * 1977-04-06 1978-10-19 Siemens Ag Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (en) * 1978-04-24 1979-10-31 Rca Corp solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631880A1 (en) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition
DE2812547A1 (en) * 1977-03-28 1978-10-05 Rca Corp photocell
DE2715471A1 (en) * 1977-04-06 1978-10-19 Siemens Ag Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (en) * 1978-04-24 1979-10-31 Rca Corp solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IEEE Transactions on Electron Devices, Bd. ED-27, No. 4, April 1980, S. 662-670 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc Photovoltaic device comprising means for directing the incident radiation for a total internal reflection
DE3306148A1 (en) * 1982-03-03 1983-09-15 Energy Conversion Devices Inc Junction photo element of semiconductor material
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (en) * 1982-09-27 1984-03-30 Rca Corp Photodetector and method for making
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
US4511756A (en) * 1982-11-19 1985-04-16 Siemens Aktiengesellschaft Amorphous silicon solar cells and a method of producing the same
EP0111750A2 (en) * 1982-11-19 1984-06-27 Siemens Aktiengesellschaft Amorphous silicium solar cell and method of manufacturing the same
EP0111750A3 (en) * 1982-11-19 1985-10-16 Siemens Aktiengesellschaft Amorphous silicium solar cell and method of manufacturing the same
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens Ag Solar cell made of amorphous silicon and process for their manufacture
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
DE3528087A1 (en) * 1984-08-06 1986-02-13 Showa Aluminum Corp Substrate for amorphous silicon solar cells
US4806436A (en) * 1984-08-06 1989-02-21 Showa Aluminum Corporation Substrate for amorphous silicon solar cells
DE3626450A1 (en) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Component of edifices and buildings which acts as a solar cell
DE102009033771A1 (en) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solar reflector for installation on e.g. flat saddle or monopitch roofs of building, has reflector surface reflecting sunlight on photovoltaic panels of photovoltaic systems, where reflector surface is designed as strewing reflector surface

Also Published As

Publication number Publication date Type
DE3023165C2 (en) 1991-05-29 grant

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8120 Willingness to grant licenses paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee