DE2861127D1 - Semiconductor junction capacitor in integrated method of construction and bootstrap circuit with such a capacitor - Google Patents

Semiconductor junction capacitor in integrated method of construction and bootstrap circuit with such a capacitor

Info

Publication number
DE2861127D1
DE2861127D1 DE7878100194T DE2861127T DE2861127D1 DE 2861127 D1 DE2861127 D1 DE 2861127D1 DE 7878100194 T DE7878100194 T DE 7878100194T DE 2861127 T DE2861127 T DE 2861127T DE 2861127 D1 DE2861127 D1 DE 2861127D1
Authority
DE
Germany
Prior art keywords
capacitor
construction
semiconductor junction
bootstrap circuit
integrated method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878100194T
Other languages
English (en)
Inventor
James Joseph Tomczak
Richard Norman Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2861127D1 publication Critical patent/DE2861127D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0777—Vertical bipolar transistor in combination with capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
DE7878100194T 1977-06-29 1978-06-19 Semiconductor junction capacitor in integrated method of construction and bootstrap circuit with such a capacitor Expired DE2861127D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,028 US4191899A (en) 1977-06-29 1977-06-29 Voltage variable integrated circuit capacitor and bootstrap driver circuit

Publications (1)

Publication Number Publication Date
DE2861127D1 true DE2861127D1 (en) 1981-12-17

Family

ID=25205344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878100194T Expired DE2861127D1 (en) 1977-06-29 1978-06-19 Semiconductor junction capacitor in integrated method of construction and bootstrap circuit with such a capacitor

Country Status (5)

Country Link
US (1) US4191899A (de)
EP (1) EP0000169B1 (de)
JP (1) JPS5412577A (de)
DE (1) DE2861127D1 (de)
IT (1) IT1112275B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321490A (en) * 1979-04-30 1982-03-23 Fairchild Camera And Instrument Corporation Transistor logic output for reduced power consumption and increased speed during low to high transition
US4376252A (en) * 1980-08-25 1983-03-08 International Business Machines Corporation Bootstrapped driver circuit
US4516041A (en) * 1982-11-22 1985-05-07 Sony Corporation Voltage controlled variable capacitor
US4679215A (en) * 1985-12-06 1987-07-07 Sperry Corporation Exceedance counting integrating photo-diode array
US4752913A (en) * 1986-04-30 1988-06-21 International Business Machines Corporation Random access memory employing complementary transistor switch (CTS) memory cells
US4760282A (en) * 1986-11-13 1988-07-26 National Semiconductor Corporation High-speed, bootstrap driver circuit
US4791313A (en) * 1986-11-13 1988-12-13 Fairchild Semiconductor Corp. Bipolar transistor switching enhancement circuit
US5255240A (en) * 1991-06-13 1993-10-19 International Business Machines Corporation One stage word line decoder/driver with speed-up Darlington drive and adjustable pull down
US5680073A (en) * 1993-06-08 1997-10-21 Ramot University Authority For Applied Research & Industrial Development Ltd. Controlled semiconductor capacitors
JP2004241624A (ja) * 2003-02-06 2004-08-26 Mitsubishi Electric Corp 電圧制御発振回路
US7602228B2 (en) 2007-05-22 2009-10-13 Semisouth Laboratories, Inc. Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
WO2017041799A1 (de) * 2015-09-10 2017-03-16 Schaeffler Technologies AG & Co. KG Nockenwellenversteller
US10360958B2 (en) * 2017-06-08 2019-07-23 International Business Machines Corporation Dual power rail cascode driver

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764148A1 (de) * 1968-04-10 1971-05-19 Itt Ind Gmbh Deutsche Spannungsabhaengiger Kondensator,insbesondere fuer Festkoerperschaltungen
US3544862A (en) * 1968-09-20 1970-12-01 Westinghouse Electric Corp Integrated semiconductor and pn junction capacitor
FR2036530A5 (de) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Also Published As

Publication number Publication date
US4191899A (en) 1980-03-04
JPS5635028B2 (de) 1981-08-14
JPS5412577A (en) 1979-01-30
EP0000169A1 (de) 1979-01-10
IT1112275B (it) 1986-01-13
IT7825052A0 (it) 1978-06-28
EP0000169B1 (de) 1981-10-07

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee