DE2827050A1 - Oriented silicon single crystal rod prodn. - by crucible-free zone melting with very accurate orientation of seed crystal - Google Patents

Oriented silicon single crystal rod prodn. - by crucible-free zone melting with very accurate orientation of seed crystal

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Publication number
DE2827050A1
DE2827050A1 DE19782827050 DE2827050A DE2827050A1 DE 2827050 A1 DE2827050 A1 DE 2827050A1 DE 19782827050 DE19782827050 DE 19782827050 DE 2827050 A DE2827050 A DE 2827050A DE 2827050 A1 DE2827050 A1 DE 2827050A1
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DE
Germany
Prior art keywords
rod
seed crystal
axially movable
zone
misorientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19782827050
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German (de)
Other versions
DE2827050C2 (en
Inventor
Wolfgang Dr Rer Nat Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
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Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19782827050 priority Critical patent/DE2827050C2/en
Publication of DE2827050A1 publication Critical patent/DE2827050A1/en
Application granted granted Critical
Publication of DE2827050C2 publication Critical patent/DE2827050C2/en
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks

Abstract

Prodn. of 111 -oriented Si monocrystal rods with min. mantle surface by noncrucible zone melting involves placing the ends of the rods, clamped vertically in holders, in a recipient and passing the melt zone upwards through the rod from a seed crystal. The seed crystal is oriented as accurately as possible in the 111 direction in the holder during the passage of the melt zone through the cone of the rod and zone melting of the cylindrical pt. of the rod is continued with increasing misorientation up to a final value. The cross-section of the rods is as round as possible, and the final misorientation is in the 0.7-1 degrees range.

Description

Verfahren zum Herstellen von F1IIJ-orientierten Sili-Process for making F1IIJ-oriented silicones

ciumeinkristallstäben mit möglichst geraden Manteloberflächen durch tiezelfreies Zonenschmelzen.cium single crystal rods with as straight jacket surfaces as possible deep zone melting.

Die Erfindung betrifft ein Verfahren zum Herstellen von L1113 -orientierten Siliciumeinkristallstäben mit möglichst geraden Manteloberflächen durch tiegelfreies Zonenschmelzen, bei dem die Stabenden in Halterungen eingespannt lotrecht in einem Rezipienten angeordnet sind und die Schmelzzone vom unten liegenden Keimkristall nach oben durch den Stab bewegt wird und eine Anordnung zur Durchführung dieses Verfahrens.The invention relates to a method for producing L1113 -oriented Silicon single crystal rods with the straightest possible jacket surfaces due to crucible-free Zone melting in which the rod ends are clamped in brackets perpendicularly in one Recipients are arranged and the melting zone from the seed crystal below is moved upward through the rod and an arrangement for performing this Procedure.

Beim Herstellen von {1113 orientierten Siliciumeinkristallstäben durch das tiegelfreie Zonenschmelzverfahren treten häufig Verformungen in Form von Beulen im Stabkonusbereich und Wülsten im zylindrischen Stabteil auf, wenn die Stabdurchmesser der herzustellenden Siliciumstäbe sehr groß sind (größer 50 mm).When making {1113 oriented silicon single crystal rods by the crucible-free zone melting process, deformations often occur in the form of bumps in the rod cone area and bulges in the cylindrical rod part, if the rod diameter of the silicon rods to be produced are very large (greater than 50 mm).

Die Aufgabe, die der Erfindung zugrunde liegt, besteht deshalb in der Herstellung von 1 ?) -orientierten Siliciumeinkristallstäben mit möglichst runden Stabquerschnitten.The object on which the invention is based therefore consists in the production of 1?) -oriented silicon single crystal rods with as round as possible Bar cross-sections.

Aus einem Aufsatz von R. L. Collins (J. Cryst. Growth 42 (1977), Seiten 490 bis 492) ist zu entnehmen, daß die genannten Verformungen am Stabumfang vermieden werden können, wenn der wachsende Kristall durch einen unterhalb der Schmelzspule angeordneten Kühlring gekühlt wird. Dabei wird der Kühlring an die Argongasversorgung des Rezipienten angeschlossen.From an article by R. L. Collins (J. Cryst. Growth 42 (1977), pp 490 to 492) it can be seen that the aforementioned deformations on the rod circumference are avoided can be when the growing crystal through one below the melting coil arranged cooling ring is cooled. The cooling ring is connected to the argon gas supply connected to the recipient.

Die Erfindung löst die gestellte Aufgabe auf eine andere Art und ist durch ein Verfahren der eingangs genannten Art dadurch gekennzeichnet, daß der Keimkristall in der ihn tragenden Stabhalterung im Durchlauf der Schmelzzone durch den Stabkonus möglichst genau in F111-Richtung orientiert wird und der nachfolgende zylindrische Stabteil mit bis zu einem Endwert zunehmender Fehlorientierung zonengeschmolzen wird. Dabei liegt es im Rahmen der Erfindung, daß der Endwert der Fehlorientierung im Bereich von 0,7 bis 10 eingestellt wird.The invention solves the problem in a different way and is by a method of the type mentioned at the outset, characterized in that the seed crystal in the rod holder carrying it in the passage of the melting zone through the rod cone is oriented as precisely as possible in the F111 direction and the following cylindrical Part of the rod with misorientation increasing up to a final value is zone-melted will. It is within the scope of the invention that the final value of the misorientation is set in the range from 0.7 to 10.

Weitere Einzelheiten sind den in der Zeichnung befindlichen Figuren 1 und 2, welche in Perspektive eine Anordnung zur Durchführung des erfindungsgemäßen Verfahrens darstellen, zu entnehmen. Die Anordnung nach Fig. 1 besteht dabei aus einer, aus im wesentlichen zwei Teilen (oberer und unterer Teller (4, 8)) bestehenden Keimkristallhalterung.Further details can be found in the figures in the drawing 1 and 2, which in perspective an arrangement for performing the invention Represent procedure, to be taken. The arrangement according to FIG. 1 consists of one consisting essentially of two parts (upper and lower plate (4, 8)) Seed crystal holder.

Ein, in FIIIj-Richtung orientierter Keimkristall 1 wird, wie in Fig. 1 dargestellt, mittels der Orientierungsschrauben 3 in die Keimkristallfassung 2 eingespannt.A seed crystal 1 oriented in the FIIIj direction will, as shown in Fig. 1, by means of the orientation screws 3 in the seed crystal mount 2 clamped.

Die Fassung 2 sitzt zentral auf dem oberen Teller 4 der Keimkristallhalterung auf. Auf der Unterseite des Tellers 4 ist eine konzentrisch zum Mittelpunkt verlaufende konische Rille 5 angebracht, in welche die auf der Oberseite des unteren Tellers 8 im gleichen Abstand symmetrisch voneinander angeordneten konischen Stifte 6 und 7 hineinpassen und damit auch den oberen Teller 4 zentrieren. Die Stifte 6 sind starr angeordnet; der Stift 7 ist axial beweglich ausgebildet, so daß durch das auf den Keimkristall 1 aufwachsende Stabgewicht der Stift 7 zunehmend nach unten gedrückt und dadurch die Fehlorientierung or vergrößert wird. Schließlich erreicht die Fehlorientierung faden Endwert, wenn der Stift 7 an der Telleroberfläche 8 aufsitzt Mit dem Bezugszeichen 9 ist die Drehachse der Anordnung bezeichnet.The holder 2 sits centrally on the upper plate 4 of the seed crystal holder on. On the underside of the plate 4 is a concentric to the center point conical groove 5 fitted into which the on top of the lower plate 8 equidistantly symmetrically arranged conical pins 6 and 7 fit in and thus also center the upper plate 4. The pins 6 are rigidly arranged; the pin 7 is designed to be axially movable, so that by the on the seed crystal 1 growing rod weight of the pin 7 increasingly downwards pressed and thereby the misorientation or is enlarged. Finally achieved the misorientation leads to the final value when the pin 7 rests on the plate surface 8 The axis of rotation of the arrangement is denoted by the reference numeral 9.

Die Fig. 2 zeigt die spezielle Ausführung des axial beweglich konischen Stiftes 7 in vergrößerter Darstellung.Fig. 2 shows the special design of the axially movable conical Pen 7 in an enlarged view.

Dabei ist der Stift 7 auf einer temperaturfesten Blattfeder 10 angeordnet, welche mittels der Schraube 11 auf dem Teller 8 befestigt wird. Durch die Schraube 12 wird der für die gewünschte Fehlorientierung 0 notwendige maximale Hub des Stiftes 7 eingestellt.The pin 7 is arranged on a temperature-resistant leaf spring 10, which is fastened on the plate 8 by means of the screw 11. Through the screw 12 is the maximum stroke of the pin necessary for the desired misorientation 0 7 set.

% Figur 5 Patentansprüche L e e r s e i t e% Figure 5 claims L e r s e i t e

Claims (5)

Patentansprüche 1. Verfahren zum Herstellen von L111 -orientierten Siliciumeinkristallstäben mit möglichst geraden Manteloberflächen durch tiegelfreies Zonenschmelzen, bei dem die Stabenden in Halterungen eingespannt lotrecht in einem Rezipienten angeordnet sind und die Schmelzzone vom unten liegenden Keimkristall nach oben durch den Stab bewegt wird, d a d u r c h g e k e n n -z e i c h n e t , daß der Keimkristall in der ihn tragenden Stabhalterung im Durchlauf der Schmelzzone durch den Stabkonus möglichst genau in Ei 113 -Richtung orientiert wird und der nachfolgende zylindrische Stabteil mit bis zu einem Endwert zunehmender Fehlorientierung zonengeschmolzen wird.Claims 1. Method for producing L111 -oriented Silicon single crystal rods with the straightest possible jacket surfaces due to crucible-free Zone melting in which the rod ends are clamped in brackets perpendicularly in one Recipients are arranged and the melting zone from the seed crystal below is moved upwards by the rod, so that it is not possible to sign that the seed crystal in the rod holder carrying it as it passes through the melting zone is oriented as precisely as possible in the direction of Ei 113 by the rod cone and the subsequent cylindrical rod part with increasing misorientation up to a final value zone melted. 2. Verfahren nach Anspruch 1, d a d u r c h g e -k e n n z e i c h n e t , daß der Endwert der Fehlorientierung im 3ereich von 0,7 bis 10 eingestellt wird.2. The method according to claim 1, d a d u r c h g e -k e n n z e i c h n e t that the final value of the misorientation is set in the range from 0.7 to 10 will. 3. Anordnung zur Durchführung des Verfahrens nach Anspruch 1 und 2, g e k e n n z e i c h n e t d u r ch eine Keimkristallhalterung bestehend aus einem, die Fassung für den Keimkristall tragenden oberen Teller, welcher auf seiner Unterseite mit einer konzentrisch zum Mittelpunkt verlaufenden konischen Rille versehen ist und einem unteren, die Drehachse enthaltenden Teller, welcher auf seiner Oberseite entsprechend der konischen Rille symmetrisch zueinander angeordnete konische Stifte enthält, von denen einer axial beweglich ausgebildet ist.3. Arrangement for performing the method according to claim 1 and 2, a seed crystal holder consisting of a, the setting for the upper plate carrying the seed crystal, which is on its underside is provided with a conical groove running concentrically to the center and a lower plate containing the axis of rotation, which is on its upper side conical pins arranged symmetrically to one another corresponding to the conical groove contains, one of which is designed to be axially movable. 4. Anordnung nach Anspruch 3, g e k e n n z e i c h -n e t d u r c h drei symmetrisch im Winkel von 1200 angeordnete konische Stifte, von denen zwei starr und einer axial beweglich ausgebildet ist.4. Arrangement according to claim 3, g e k e n n z e i c h -n e t d u r c h three conical pins symmetrically arranged at an angle of 1200, two of which is rigid and one is axially movable. 5. Anordnung nach Anspruch 3 und/oder 4, d a -d u r c h g e k e n n z e i c h n e t , daß der axial beweglich ausgebildete Stift mit dem Drehteller durch eine auf diesem befestigte, temperaturfeste Blattfeder verbunden ist und daß für den maximalen Hub des axial beweglich ausgebildeten Stiftes eine Einstellschraube an der Blattfeder angebracht ist.5. Arrangement according to claim 3 and / or 4, d a -d u r c h g e k e n n z e i c h n e t that the axially movable pin with the turntable is connected by a temperature-resistant leaf spring attached to this and that an adjusting screw for the maximum stroke of the axially movable pin is attached to the leaf spring.
DE19782827050 1978-06-20 1978-06-20 Process for the production of [111] -oriented silicon single crystal rods with jacket surfaces that are as straight as possible by crucible-free zone melting Expired DE2827050C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19782827050 DE2827050C2 (en) 1978-06-20 1978-06-20 Process for the production of [111] -oriented silicon single crystal rods with jacket surfaces that are as straight as possible by crucible-free zone melting

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Application Number Priority Date Filing Date Title
DE19782827050 DE2827050C2 (en) 1978-06-20 1978-06-20 Process for the production of [111] -oriented silicon single crystal rods with jacket surfaces that are as straight as possible by crucible-free zone melting

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DE2827050A1 true DE2827050A1 (en) 1980-01-10
DE2827050C2 DE2827050C2 (en) 1986-09-11

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19825051A1 (en) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Method and device for producing a cylindrical single crystal and method for separating semiconductor wafers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1619994A1 (en) * 1967-03-09 1970-03-26 Siemens Ag Process for breeding rod-shaped, dislocation-free single crystals, in particular made of silicon, by zone melting without crucible
DE1519907A1 (en) * 1966-12-07 1970-07-02 Siemens Ag Device for crucible-free zone melting of crystalline rods

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519907A1 (en) * 1966-12-07 1970-07-02 Siemens Ag Device for crucible-free zone melting of crystalline rods
DE1619994A1 (en) * 1967-03-09 1970-03-26 Siemens Ag Process for breeding rod-shaped, dislocation-free single crystals, in particular made of silicon, by zone melting without crucible

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19825051A1 (en) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Method and device for producing a cylindrical single crystal and method for separating semiconductor wafers

Also Published As

Publication number Publication date
DE2827050C2 (en) 1986-09-11

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