DE2810316A1 - VACUUM EVAPORATION PROCESS - Google Patents

Description

28103} 6

i3i-write uncr

Di ·. ² · ISrfincunc- relates to a vacuum evaporation process for. Vapor deposition of a black layer film, according to which at least one substrate is attached to a rotatable substrate holder with a mask , a first vapor deposition layer with a first vapor deposition source opposite the substrate is applied to the substrate with the substrate holder rotating, and then a second vapor layer with a second vapor deposition source is applied to the substrate first vapor deposition is applied. The invention shall look in particular to a mask vapor deposition method for producing a plurality of layers or a multi-layer film wherein a plurality of _r Bedampfunosquelie be used.

The method of making patterns using multilayer films are widely used in many areas in integrated circuit manufacture and the like used.

For example, if a Cr-Au wiring or. Conductor pattern for wiring or connecting conductors or connections in an integrated circuit or the like-3n is formed, a chrome layer iia Vacuum evaporated onto a substrate. On the Cr layer an Au layer is then vapor-deposited or electroplated. First, an Au pattern is photolitaographically is formed and at least the Cr layer is restored

^ 5 photolithographically processed so that a Cr pattern that larger than the Au pattern is formed. The reason why the pattern of the lower Cr layer yemacnt bigger is called the pattern of the top layer (the Au layer)

609837/09 / ♦ 3

ORIGINAL INSPECTED

is to prevent the layers during dii different Ilachbehandlungen that are performed after the wiring or the Leiterpianenbildung, for example, during the ultrasonic cleaning, stripped or removed.

For example, in the above-described two-layer film, when the A layer is etched and the underlying Cr layer is then etched using the resulting Au layer pattern as a mask, the etching solution also penetrates under the Au layer and the Cr layer is penetrated this etching solution also etched. The Xante or the sand of the Au layer, under or under which there is no Cr layer, is peeled off upwards or is exposed. Is performed in this state when an R ~ ini gang with ultrasound, the Au layer is peeled downright. The process step for Au etching and the process step for Ca etching are therefore essential in the conventional process in addition to the process step of vapor deposition of Cr and Au

-2o required and these three procedural steps must must be carried out for wiring the Cr-Au conductors. The conventional method is therefore time-consuming, since these three indispensable process steps are carried out and the production yield is therefore small amount. In addition, the conventional method numerous difficulties and disadvantages in carrying out the manufacturing process and in handling the means used in the manufacturing process, for example the preservation or preservation of the and Cr etching solutions and the photoresist 3handlungsinittGl, for example the developer and the photoresist interface, as well as the rinsing water treatment or preparation.

809837/0943

In order to determine the process steps in which a wet etching or an etching process with a liquid etchant is carried out, To avoid this, a method is used in which a mask is formed on a substrate by vapor deposition, and using this MaslrB, a pattern is selectively applied-this Procedure is for example in "Handbook of Thin Film Technology, page 7-3 to 7-lo ' by L. Maissei and R-Clang, published by McGraw Hill Book Company, 197o.

Another method involves applying multiple substrates eincra rotatable substrate holder is arranged and vapor-deposition layers are with a single steam source or several sources of demand facing the substrate are arranged, applied to the substrate. This process is described in DE-OS 2,711,714, for example -

In this previously proposed method, it is necessary, - the steam before gear UNTC-r using different masks to perform twice _r to the size or dimension of the upper layer pattern smaller than the size or dimension to make the lower layer pattern. It is therefore not possible to circumvent the procedural step, which is in itself fraught with great difficulties, of aligning the two masks precisely with one another.

The invention is therefore based on the object of providing a vacuum vapor deposition process for vapor deposition of a multilayer film indicate in which the number of process steps compared to the conventional process is low and no special care is taken in the treatment and handling of the treatment solutions

SG9837 / 0

or applied to the rinse water treatment or preparation must be, - with a multi-layer pattern with a structure in which the size or dimension of a task layer is smaller than the size or dimension d <* r Another on steam layer is, when using only one '.. · :! " Mask can be made in a simple manner.

This object is achieved according to the invention by the in the characterizing Part of claim 1 specified Maßnaruarn solved.

Advantageous refinements of the invention are specified in the subclaims.

According to the present invention, only the Vacuum W-iufdampf process step is carried out, so that the number of cc-r process steps can be reduced. The formation of a pattern is carried out according to the mask deposition method. With the method according to the invention cs is impossible. use the vacuum evaporation process to produce a multi-layer film au and size bzv /. To make size or dimension of the other Aufdampfschicnt-.iustcrs: dimension of a vapor-deposited layer pattern smaller than Ji.

The invention is explained below with reference to the drawings for example explained in more detail. Show it:

Fig. 1 is a schematic illustration for explanatory purposes the basic principle of the present invention,

FIGS. 2A and 2B show a detail from FIG. 1 on an enlarged scale Scale,

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_BATH

3 shows a further schematic illustration for explanation of the principle of the present invention.

Tig. 4 fr in a cross section through a multilayer film, which is produced with the method according to the invention became,

Fij. 5 is a schematic representation of a device

to carry out dc-s method according to the invention, and

6 shows a cross section through another multilayer film, the with dr-m method according to the invention

was asked.

Example 1:

Fig. 1 shows the basic principle of the present invention. A substrate S and an evaporation mask M are attached to each other attached and together on a rotatable (not shown) Substrate holder attached with which you can sit threaten. The axis of rotation 0-0 'of the rotatable substrate holder is dab ^ i the center of the rotary movement. A first Vaporization source P is located at one point - the at a distance L from the axis of rotation li ^ -gt. the The position of a second vapor deposition source Q is chosen so that 3 the / distance between the axis of rotation and the second impingement source Q smaller than the distance L and the distance between the cU-iu substrate holder and the second de-

2j vapor source equal to the distance between the substrate holder and the first evaporation source (in Fig. 1 is the distance between the axis of rotation 0-0 'and the second Steam source - Q Hull).

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BAD ORSGIWAL

The positions of the vaporization sources are in the manner described above Wise chosen, and when the substrate holder rotates, for example, chromium is obtained from the first 3c evaporation source P evaporated. Because the edge of the pattern

ö a Bedampfungsraaske. (with a thickness of etv; a 5o to about loo .u) is rounded as shown in Figure 2A, and a small gap exists between the mask and the substrate (of about .u Io), a Abschatcunqseffekt occurs - The vaporized substance gets a little (about 5, u far) under the mask. In addition, the first application source Q is located at a point which lies outside the axis of rotation of the substrate holder and the substrate is rotated. Accordingly, the vaporized substance, for example chromium, goes from the first vapor deposition source P significantly further under the mask M, as is shown by the drawn-out line in the drawing, and is deposited on the substrate S. This solid line indicates the largest pattern width - a layer formed by vapor deposition. A chromium layer formed in this way has the reference To improve the switch-off effect, a suitable spacer element 4 can be arranged between the substrate and the mask, as shown in FIG. 2B.

Then, for example, gold is vapor-deposited from the second Bedainpiunq source Q. The largest pattern width of the gold layer evaporated on is smaller than the largest pattern width of the chrome layer formed by steaming with the first steaming and is indicated in the drawing by a dashed line. An on dieöt ^r, ieise formed gold layer is hen-vc-rsc with dom Besucrszeichm.

809837/0943

281Ü3 Ib

-Lo-

Know the substrate together with the substrate holder is rotated, and the positions of the first and second source of damming P and Q are selected in the manner described above, the master width can be achieved by vapor deposition with the first vaporization source P formed Chrcraschicht always smaller than the pattern width of the through Vapor deposition with the second evaporation source Q gs gold layer has been made.

In "the embodiment described above, the Dampf ungsquelle Q arranged at such a point.

that the distance between the second vapor deposition and the substrate holder on the rotational axis 0-0 'of the substrate holder is equal to the distance between the first vapor deposition P and the substrate holder on the rotational axis 0-0' of the substrate holder. Obviously, the above-described effect can be obtained in this case "if the distance between the second evaporation source Q and the axis of rotation 0-0 'of the substrate holder is less than the distance L between the first evaporation source P and the axis of rotation 0-0' The above-described effect can also be achieved in the same way if the condition XSt ₇ that the position of the second vapor deposition source Q lies on the threatening axis 0-0 'of the substrate holder is below a point R at which a straight line, dir-5, the first vapor source P connects to the end of the substrate S remote from the 3odarapfungsquelle P at the test, and intersect the axis of rotation OO 'of the substrate holder rs.

The positional relationship between the first evaporation source P and the second evaporation source Q will be explained below with reference to FIG. 3 for the most general case.

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- Ii -

The second evaporation source Q is located within v.ünc-5 Kc-qsls, which results when a Gsradp. Which- the r-rstc evaporation source? P with the 2nd - Γ ύ.-s substrate furthest away from d ;; r erstc-n Vc-ruar.ofun-i = source P

5- S connects, is rotated, - whereby the axis of rotation of the J abs erathalters is the axis of rotation for the rotation of this Gc-rad cn (the tip of the cone is at point R, at d -: - ni itself ii> ~ straight line, which connects the first evaporation source with the end of the substrate which is furthest from the evaporation source and intersects the axis of rotation 0-0 'of the substrate holder). The first evaporation source P is located outside a cone _T which results - if a straight line connecting the second evaporation source Q with the end M of the substrate S which is closest to the awsitp-n evaporation source Q is rotated, the axis of rotation of the SuDStrathalters is the center of rotation. If this positional relationship exists between the first and second supply sources P and Q, the effect described above can be achieved in a corresponding manner.

Obviously, a Zv / eichtschicht-Piim.r u-, ra,: n shown in Fig. 4 have a cross-section, formed with the r.cra rrr invention method, in d <rm vin · mask and two conditions pfungsquellen uses Wt-rdrn. Jio treatment with a liquid or the wet treatment: lun <"(for example treatments with chemical solutions): tiu3 are not carried out at all, and the ar ..": a; il the process steps can be considerably reduced . In addition, a treatment, preparation oC r L-.preparation of treatment liquid or a ·: G -.- iiandlvir. τ of the wastewater or the consumption water can be dispensed with.

809837/0943

281031b

Licnn the previously bc-written principle of the present Hrfindunc is used, a marriage 3 Cxi i ten-Fi Ir.i with three or more layers without Difficulty c-n formed wr-rdf-n, - in which the pattern rbrc-ite from the bottom to the top layer step by step is vc-rringert. In this c-Ta case there are three or one equivalent Number of Bedainpfungsquelle.n arranged so that the above-described positional relationship between each zv / ei adjacent sources of evaporation exist.

The positional relationship of the evaporation sources to the Substrvit is described below with the aid of specific examples will. Fig. 5 shows a schematic representation of a device for carrying out the invention Method, this device being illustrative of these specific embodiments is provided.

A substrate 52 is placed on a rotatable substrate holder 51 together with a mask, and the substrate 52 rotates at a speed of 5 to 45 o / min. about an axis i-i '(which represents the axis of rotation). Naturally the object can also be achieved if the substrate 52 is rotated step by step. Special conditions .n and 'Jerte for the positional arrangement of the rotatable substrate holder 52. the first evaporation source 53 and the second evaporation source 54 are shown in table 1.

5 in this table, A denotes the diameter of the rotatable substrate holder 52, B the distance between the center points -η of the substrates which are furthest outward on the substrate holder, C the distance between the first evaporation source 53 and the axis of rotation i-i ', D the distance between the axis of rotation ii ¹ and the second 3 vapor ;; r, -. "Fjquelle 54 at a point dit- from the substrate holder in the same

R09837 / 0943

Distance is spaced, like the distance, with ..km the first Beainpfungsquelle 53 spaced from the substrate holder is, Ξ the distance between one through the Becomefunqsquellen spanned plane and one through the surface; of the substrate to be vaporized formed Ebc no.

Table 1

A bstan d Example (I) Β? Ϊ́? Ρ! Ξ_1_1? _Ι! Example (III)

A. 27o 27o 27o B. 2o4 2o4 2oi Io C 6o 85 loo D. O 4o So E. 16o 16o iöo

Unit: Io ^J η

Example (I) mainly serves to show the dependence on the legality of the difference between the width fines formed by vapor deposition with the first vapor deposition source 53 and the width of a pattern formed by the second vapor deposition source 54 . The diameter A for the rotatable substrate holder 51 was 27o mm, - for the distance 3 between cu-n centers of the substrates / which are arranged furthest outside on the substrate aiccT, 2ol were now, as the distance C between the axis of rotation ii ¹ and the designated vaporization source 5 3 was 60 mm, as the distance D: rwl see the axis of rotation ii 'and the two-itnn floor vapor source 54 were 0 mm (ie the second vaporization source

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BATH ORIGINAL

28

54 lies on the axis of rotation ii '), and 1δο irjri was chosen for the distance' £ between the plane spanned by the vapor deposition swell and the surface of the substrate 52. When the rotatable substrate holder 51 rotates at a speed of 20 rpm _; For example, * chromium is evaporated from the first evaporation source 53. Thereafter v ird gold from the second Bedampfungsqu "deposited / ll ^e, so that a chromium-gold bilayer film. The Be vapor ε-η is executed, v / tinn on the substrate, a molybdenum-Bedaiapfungsmaske firmly rests the perforations with This results in a vapor-deposited male layer film with the cross section shown in Fig. 4. In the flow guide form shown in Fig. 4, the larger pattern 2 on the substrate 1 is a chrome layer and the smaller pattern A gold layer is formed on the pattern 2. As shown in FIG on the right side is reduced and the coIdniuster can be designed so that it is completely within the chrome pattern.

In Ausführungsbeispif.l II the -Ί is carried out in the same way as in embodiment 1, with the only difference that the dimensions of the device are changed in the manner shown in Table 1. This exemplary embodiment is distinguished in that the thickness of a layer formed by vapor deposition with the first diffusion source 53 (that is the chromium layer in this exemplary embodiment) can be formed very uniformly.

In Embodiment III, the uniformity with regard to the thickness of the resulting layer is

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\ ■ BAD

- r

Ü8103 Ib

special improved by the fact that those given in Table I. Dimensions can be chosen. The fluctuations in thickness which by steaming with the first steaming unr; 3 - [uc-lir

The layer formed is so small that it is practical can be neglected, and the thickanvertc-ilurig by steaming with the second steaming unit; .-

54 formed layer is improved so that the cas ratio between the 'greatest thickness and the smallest thickness becomes less than 1.5.

When in the present invention, there are two evaporation sources lie in the same horizontal plane, as shown in Fig. 5, the task at hand achieved according to the basic principle of the present invention if only the requirement c3 »D is met.

From the standpoint of the practitioner from ι and for safety reasons in the present process, however, as preferable - the respective distances A to '£ to choose, in the following manner.

The distances A, B, C and E are given by the Ab iT.es sun er-η de Vacuum device limited, and if the respective distances to be chosen in the areas that meet the · requirement of the Fulfill the present invention, it is difficult which Size E to decrease below the value o, 2B, and: was w the restrictions on Dickc-nvertc-ilunc; ur.J the device mechanisms, for example the Versc.iluJ-

mechanism and because of the monitoring or Stc-ucru :: '; bc-im evaporation of the film. In addition, it prepares difficulty nachrn the size E is greater than 53, since the pattern width difference between the two layers is limited way. Dip size E is therefore selected in the following specified range in ic-m:

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28 103 Ib

E = O.2B to 52

The degree of efficiency is vcrrinaert br, · /, which leads to £ ri ';cv_n5t'-li- * n: V'ir.tunq.3v «' i ^: --i; 3c-- when performing the method we throw, cing- .. limited if the first requirement is arranged outside of the substrate holder. For this reason, and because of the control or monitoring during the vapor deposition of the layer, it is difficult to achieve the To choose larger than i .. 53. With regard to the pattern width tendency, the smallest value of the difference between C and D (CD) is 2o, and if the case υ = 0 is taken into account, size C is selected within the range given below:

C = 20 mm to 1.5B

Diet; Size * D should of course be replaced by the previously mentioned size. C be arent and will be within the following an7cg, - 'j - ", nen Bcrc-iciis chosen:

D = O me. to (l _f 5l3 - 2o now)

VMna the distance between the second vapor deposition source and the surface of the substrate 5 2 differs from the distance between the first vapor deposition source 53 and the surface of the substrate 52 . Large inside of the following area selected:

D = 0 mm ois ~ - (1.53 - 2o mm)

Here: - E 'is the distance between the second Ut-campfur: as 5Λ and the surface of the substrate 52.

is

In this case, however, it is necessary .. da3 ai · - Bedanipfungsauelle below the point R anc-'f-ordot

£ 09837/0943

BATH ORIGINAL

10 3 Ib

the straight line that erjt for you; 3oda :: ipfu.nc, 3; u - iI -_- JL with the from dor c-rstan IDodampfungs.ju.ilie L> 3 am ^r ,: <- ii: c: 5t.; N removed liecr ^ nd '-n Znci "of the substrate 52 vc-rbinir-t," ..liu the axis of rotation-: ii' of the substrate holder 51 ncnn-idrt. In this case the largest? VZcrt of TJ 'c-twa io'-.

The respective distances are within acr before "■: = - Give areas chosen.

In the above-described examples I and III "./rrdrn the sizes C and A are chosen in optimal ranges, uobr-i B are chosen with 20 mm and S with 150 mm. In ci" 3-a Ealle the size C is within the Dereiches of cr.is o, 33 o to about, 5B and Gr 33e D is within dc-s range of O to mrn ο, 33. These optimal Bcr ^ -ichr, v / earth determined depending on factors, depending on the control odsr Koncroll.t when applying the layer, and / or the screen width zv / i3che; n the first on gedaivf ts-n Goliich'j and the ζ v / A pelvic window is displayed.

The number of turns of the rotating substrate holder is determined depending on the desired thickness of the layer and the speed of the steam. Regarding a smooth layer thickness, the substrate should be rotated at least five times. In order to obtain a uniformity of the layer structure, the substrate holder should, however, be grounded at least ten times. tooth revolutions. In particular ' r ..- ' ./nr.n the substrate holder is a Planeti.-ncr-rnhalter, it is with regard to a gloichzürru. -Te layer thickness. at the edge regions of the pattern and in view of the pattern difference in the two-tone film, it is absolutely necessary to rotate the substrate holder ten times.

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BADORSGiNAL

8 103 Ib

- 13 -

Α \ ι Γι dr-r vorgr gang <~ ncn description becomes clear. d ~ 3 a · "layer o ..: - r ^r in FiIn iric several layers' ib ~ rci-andrr, I; -.- i i'.n;nc; L · - 3rr.it" d- ~ s unt ..; rc.nschichtz.r.un- --rj grc2t-r ai ~ ei- Ar-icc d-> upper Cchichtniiaters isc, <rfi.-iäun'.TSfjr -: ad; j with a a ::.! jen Vrrfahrc-r, 3 step (-r'ir.iu - ■ • Ici: iv "-nbtciar.:ifuiicfs-Vr rfahr ~ .n3sc.iri tt) rrz? * \ iqt v / t- r; .- ' .r, icanri, v.'through the number of procedural stages v-jrringrrt. Since durüb_minau3 no-treatment solution Όζ \ · ί. Tr.-ating-LJsurig vc-rv.x nar _: .t v / ird .. treatment solutions oüc-r finr- ßchanalung rait Spälv / assfi-r or a treatment of the zirti rinsing used water are not necessary. i Vt- r ~ in fold t.

Ausf lih

B ~ i the previously bt-wrote c-ncn execution terms 1 h: inri: '- lt it is about. dr-n case, bc-i d ^ -ui the mustc-r width of uiic ~ r ~ n JCiiicnt greater than di ^ uter width dc-r upper "caicht; so in should- we this bc? i Cr-Au-, NiCr-Au- and Cr-Cu-Lc it-: .- r-KiUotern the l'all is. However, it is sometimes required.

since, '3 the sample letter of the obscure layer is greater than the' •! underwidth of the lower layer. For example, this is the case when a conductor or a photoconductor 2 is first formed on a substrate S (for example, on glass or silicon) and a protective or insulating layer 3 is then placed over the gc- entire surface is applied, as Fic ,. β displays. The present invention can also be used for the preparation of such Mehrschichtenfilncn. Or more specifically, a structure as illustrated for example in Fig. 6, only receive a Maskenbedampfung at Durchfährung

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6 103

wr-.nn are the order of the Bt attenuation with the first and second requirement qu'r-ll? ge-cf-nüber drr R-ih.-riioI? · - bder previously described run-out form 1 uim - kf-hrt '- / ira.

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BATH ORIGINAL

Le

e r s e ι t e

Claims (5)

Pi · T £ l> ¹ TAN ¹ VA '.TE SHIP ν. FÜNER STREHL SCHÜBEL-HOPF EBBINGHAUS FINCK MARIAHILFPLATZ 2 & 3, MUNICH 9O POST ADDRESS: POSTBOX 95 O1 6O, D-8OOO MÖNCHEN 95 HITACHI, LTD- and HITACHI DENSHI KABUSHIKI KAISHA March 9 , 1973 DA-5583 Vacuum evaporation process Claims Ii vacuum vapor deposition process for vapor deposition of a multilayer ten film, according to which at least one substrate is composed with a mask attached to a rotatable substrate holder, a first vapor deposition layer with one of the Substrate opposite first vapor deposition source with rotating substrate holder on the substrate applied and then a second vapor deposition layer with a second vapor deposition source on the first vapor deposition layer is applied, characterized in that that one of the first and second evaporation sources is arranged within a cone which is located on the Side on which the steaming source is arranged, 809837/0941 I b 1 Q 3 ib if a straight line results in the other source of vaporization with your from the other steaming source am v / ei test the distal end of the substrate on connects the three-bar substrate holder in order to Drehip.itt Glpunkt-forming rotary axis of the rotatable Substrathaltc-rs is threatened, and that the other source of demand is arranged outside of a cone, which results when a straight line, the one vaporization source with this one vapor source. the closest end of the substrate on the rotatable substrate holder connects to the center of rotation forming axis of rotation of the rotatable substrate holder is rotated. 2. The method according to claim 1, characterized in that g e k e η η, that between the substrate and the Mask a spacer is used. 3. The method according to claim 1 or 2, characterized in that the steaming first with de-.r other steam source and then with one steam source. "source is performed. 4. The method according to any one of claims 1 to 3, characterized characterized in that a plane spanned by the two Bedanipfungsquellen to a plane lies parallel through the surface of the vaporization sources opposite substrate is formed, and that the distance between the two planes in a range between 0.2 to 5 times the distance between the centers of the two am furthest outlying substrate lies. ii 809837/0 ^ 4 3 ^! : * - ORSGiNALlNSPECTED 28! 03 "Ib 5. The method according to any one of claims 1 to 4.- characterized g e k e η η ζ e i c h η e t that the / distance between the other steaming source and the Drt-hachse des rotatable substrate holder in a Bt-rr-i of 2c r.m up to 1.5 times the distance sv / ischt-n den heidi ii Bbenen lies. ft 09837/094 3